Page 1
Advanced Technical Information
DSEP 30-12CR
HiPerDynFRED
TM
with soft recovery
(Electrically Isolated Back Surface)
V
RSM
V V
1200 1200 DSEP 30-12CR
Symbol Conditions Maximum Ratings
I
FRMS
I
FAVM
I
FRM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
Mounting force with clip 10...50/2...10 N/lb.
Weight typical 6 g
Symbol Conditions Characteristic Values
IR① TVJ = 25°C VR= V
V
② I
F
R
thJC
R
thCH
t
rr
I
RM
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
V
RRM
Type
A
70 A
TC = 85°C; rectangular, d = 0.5 30 A
tP < 10 µs; rep. rating, pulse width limited by T
VJM
tbd A
TVJ = 45°C; tp = 10 ms (50 Hz), sine 25 0 A
TVJ = 25°C; non-repetitive 0.2 mJ
IAS = 1.3 A; L = 180 µH
VA = 1.25·VR typ.; f = 10 kHz; repetitive 0.1 A
-55...+175 °C
175 °C
-55...+150 °C
TC = 25°C 165 W
50/60 Hz RMS; I
≤ 1 mA 2.5 kV
ISOL
typ. max.
TVJ = 150°C VR= V
= 30 A; TVJ= 150°C 3.1 V
F
RRM
RRM
250 µA
2mA
TVJ= 25°C 5.0 V
0.9 K/W
with heatsink compound 0.25 K/W
IF = 1 A; -di/dt = 200 A/µs; 20 ns
VR = 30 V; TVJ = 25°C
VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs 4.0 A
TVJ = 100°C
② Pulse Width = 300 µs, Duty Cycle < 2.0 %
I
FAV
V
t
rr
ISOPLUS 247
C
A = Anode, C = Cathode
* Patent pending
= 30 A
= 1200 V
RRM
= 20 ns
TM
C
A
Isolated back surface *
Features
●
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
●
Low cathode to tab capacitance (<25pF)
●
International standard package
●
Planar passivated chips
●
Very short recovery time
●
Extremely low switching losses
●
Low IRM-values
●
Soft recovery behaviour
●
Epoxy meets UL 94V-0
●
Isolated and UL registered E153432
Applications
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode in converters
and motor control circuits
●
Rectifiers in switch mode power
supplies (SMPS)
●
Inductive heating
●
Uninterruptible power supplies (UPS)
●
Ultrasonic cleaners and welders
Advantages
●
Avalanche voltage rated for reliable
operation
●
Soft reverse recovery for low EMI/RFI
●
Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
●
ISOPLUS 247
TM
package for clip or
spring mounting
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
Dimensions see IXYS CD 2000
008
1 - 1
Loading...