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Common Cathode
Fast Recovery
Epitaxial Diode (FRED)
DSEK 60 I
FAVM
V
RRM
t
rr
= 2x 26 A
= 1200 V
= 40 ns
V
RSM
V
RRM
Type
TO-247 AD
V V
1200 1200 DSEK 60-12A
A C A
A = Anode, C = Cathode, TAB = Cathode
Symbol Test Conditions Maximum Ratings
I
FRMS
I
ÿÿ
① TC = 85°C; rectangular, d = 0.5 26 A
FAVM
I
FRM
I
FSM
TVJ = T
VJM
tP < 10 ms; rep. rating, pulse width limited by T
VJM
50 A
375 A
TVJ = 45°C; t = 10 ms (50 Hz), sine 200 A
t = 8.3 ms(60 Hz), sine 210 A
TVJ = 150°C; t = 10 ms (50 Hz), sine 185 A
t = 8.3 ms(60 Hz), sine 195 A
Features
●
●
●
●
●
●
●
I2t TVJ = 45°C t = 10 ms (50 Hz), sine 200 A2s
t = 8.3 ms(60 Hz), sine 180 A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine 170 A2s
t = 8.3 ms(60 Hz), sine 160 A2s
T
VJ
T
VJM
T
stg
P
tot
M
d
TC = 25°C 125 W
Mounting torque 0.8...1.2 Nm
-40...+150 °C
150 °C
-40...+150 °C
Weight 6g
Symbol Test Conditions Characteristic Values
typ. max.
I
R
V
F
V
T0
r
T
R
thJC
R
thCK
R
thJA
t
rr
I
RM
TVJ = 25°CVR= V
TVJ = 25°CVR= 0.8 • V
RRM
TVJ = 125°CVR= 0.8 • V
RRM
RRM
750 mA
250 mA
7mA
IF = 30 A; TVJ=150°C 2.2 V
TVJ=25°C 2.55 V
For power-loss calculations only 1.65 V
TVJ = T
VJM
18.2 mW
0.9 K/W
0.25 K/W
70 K/W
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V; TVJ = 25°C40 60 ns
VR = 540 V; IF = 30 A; -diF/dt = 240 A/ms1618A
L £ 0.05 mH; TVJ = 100°C
Applications
●
●
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Advantages
●
●
●
●
●
A
C
A
C (TAB)
International standard package
JEDEC TO-247 AD
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behavior
Epoxy meets UL 94V-0
Rectifiers in switch mode power
supplies (SMPS)
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Operating at lower temperature or
space saving by reduced cooling
① I
rating includes reverse blocking losses at T
FAVM
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
, VR = 0.8 V
VJM
, duty cycle d = 0.5
RRM
© 2000 IXYS All rights reserved
036
1 - 2
Page 2
DSEK 60, 1200 V
70
A
60
50
I
F
40
=25°C
T
VJ
=100°C
T
VJ
TVJ=150°C
30
20
10
0
01234
V
F
V
6
=100°C
T
VJ
µC
VR= 540V
5
=30A
I
F
4
=60A
I
Q
r
F
=30A
I
F
IF=15A
3
2
max.
1
0
1 10 100 1000
-diF/dt
typ.
A/µs
50
TVJ=100°C
A
V
= 540V
R
40
I
I
RM
30
=30A
F
=60A
I
F
I
=30A
F
IF=15A
max.
20
typ.
10
0
0 200 400 600
/dt
-di
F
A/µs
Fig. 1 Forward current Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus
versus voltage drop. -diF/dt.
1.4
1.2
1.0
K
f
0.8
0.6
I
RM
Q
R
0.4
0.2
0.0
0 40 80 120 160
T
J
°C
1.0
µs
0.8
t
rr
0.6
max.
I
I
I
I
0.4
0.2
0.0
typ.
0 200 400 600
-diF/dt
T
VJ
VR=540V
=30A
F
=60A
F
=30A
F
=15A
F
=100°C
A/µs
60
V
50
V
FR
40
V
FR
30
20
t
fr
10
0
0 200 400 600
di
/dt
F
TVJ=125°C
I
=30A
F
A/µs
Fig. 4 Dynamic parameters versus Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage
junction temperature. versus diF/dt.
1200
ns
1000
800
tfr
600
400
200
0
1.0
K/W
0.8
Z
thJC
0.6
0.4
0.2
0.0
0.001 0.01 0.1 1 10
s
t
Fig. 7 Transient thermal impedance junction to case.
© 2000 IXYS All rights reserved
Dimensions
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M
M 0.4 0.8 0.016 0.031
N
N 2.2 2.54 0.087 0.102
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