Datasheet DSEI2X31-12B, DSEI2X30-12B Datasheet (IXYS)

Page 1
© 2000 IXYS All rights reserved
1 - 2
V
RSM
V
RRM
Type
V V
Symbol Test Conditions Maximum Ratings (per diode)
I
FRMS
TVJ = T
VJM
70 A
I
FAVM
ÿÿ
① TC = 50°C; rectangular, d = 0.5 28 A
I
FRM
tP < 10 ms; rep. rating, pulse width limited by T
VJM
375 A
I
FSM
TVJ = 45°C; t = 10 ms (50 Hz), sine 200 A
t = 8.3 ms(60 Hz), sine 210 A
TVJ = 150°C; t = 10 ms (50 Hz), sine 185 A
t = 8.3 ms(60 Hz), sine 195 A
I2t TVJ = 45°C t = 10 ms (50 Hz), sine 200 A2s
t = 8.3 ms(60 Hz), sine 180 A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine 170 A2s
t = 8.3 ms(60 Hz), sine 160 A2s
T
VJ
-40...+150 °C
T
VJM
150 °C
T
stg
-40...+150 °C
P
tot
TC = 25°C 100 W
V
ISOL
50/60 Hz, RMS 2500 V~ I
ISOL
£ 1 mA
M
d
Mounting torque 1.5/13 Nm/lb.in. Terminal connection torque (M4) 1.5/13 Nm/lb.in.
Weight 30 g
Symbol Test Conditions Characteristic Values (per diode)
typ. max.
I
R
TVJ = 25°CVR= V
RRM
0.75 mA
TVJ = 25°CVR= 0.8 • V
RRM
0.25 mA
TVJ = 125°CVR= 0.8 • V
RRM
7mA
V
F
IF = 30 A; TVJ=150°C 2.2 V
TVJ=25°C 2.55 V
V
T0
For power-loss calculations only 1.65 V
r
T
TVJ = T
VJM
18.2 mW
R
thJC
1.25 K/W
R
thCK
0.05 K/W
t
rr
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V; TVJ = 25°C40 60 ns
I
RM
VR = 540 V; IF = 30 A; -diF/dt = 240 A/ms1618A L £ 0.05 mH; TVJ = 100°C
DSEI 2x 30 I
FAVM
= 2x 28 A
DSEI 2x 31 V
RRM
= 1200 V
t
rr
= 40 ns
① I
FAVM
rating includes reverse blocking losses at T
VJM
, VR = 0.8 V
RRM
, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions
Features
●
International standard package miniBLOC (ISOTOP compatible)
●
Isolation voltage 2500 V~
●
2 independent FRED in 1 package
●
Planar passivated chips
●
Very short recovery time
●
Extremely low switching losses
●
Low IRM-values
●
Soft recovery behaviour
Applications
●
Antiparallel diode for high frequency switching devices
●
Anti saturation diode
●
Snubber diode
●
Free wheeling diode in converters and motor control circuits
●
Rectifiers in switch mode power supplies (SMPS)
●
Inductive heating and melting
●
Uninterruptible power supplies (UPS)
●
Ultrasonic cleaners and welders
Advantages
●
High reliability circuit operation
●
Low voltage peaks for reduced protection circuits
●
Low noise switching
●
Low losses
●
Operating at lower temperature or space saving by reduced cooling
DSEI 2x 30 DSEI 2x 31
Fast Recovery Epitaxial Diode (FRED)
miniBLOC, SOT-227 B
E72873
009
Page 2
© 2000 IXYS All rights reserved
2 - 2
DSEI 2x 30, 1200 V DSEI 2x 31, 1200 V
Fig. 7 Transient thermal impedance junction to case.
0 200 400 600
0
10
20
30
40
50
60
TVJ=125°C
I
F
=30A
di
F
/dt
t
fr
V
FR
tfr
ns
0
200
400
600
800
1000
1200
V
V
FR
0 200 400 600
0.0
0.2
0.4
0.6
0.8
1.0
-diF/dt
t
rr
typ.
max.
0 40 80 120 160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
K
f
Q
R
I
RM
°C
T
J
0 200 400 600
0
10
20
30
40
50
A
max.
typ.
1 10 100 1000
0
1
2
3
4
5
6
µC
I
RM
-diF/dt
Q
r
01234
0
10
20
30
40
50
60
70
V
V
F
I
F
TVJ=150°C
T
VJ
=100°C
T
VJ
=25°C
A
IF=15A
I
F
=30A
I
F
=60A
I
F
=30A
VR= 540V
T
VJ
=100°C
max.
typ.
IF=15A
I
F
=30A
I
F
=60A
I
F
=30A
TVJ=100°C
V
R
= 540V
VR=540V
T
VJ
=100°C
I
F
=15A
I
F
=30A
I
F
=60A
I
F
=30A
µs
A/µs
-di
F
/dt
A/µs
A/µs
A/µs
Fig. 1 Forward current Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus
versus voltage drop. -diF/dt.
Fig. 4 Dynamic parameters versus Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage
junction temperature. versus diF/dt.
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169 F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193 H 37.80 38.20 1.489 1.505
J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033 M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001 O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235 Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174 S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987 U -0.05 0.1 -0.002 0.004
V 3.30 4.57 0.130 0.180 W 0.780 0.830 19.81 21.08
Dimensions
miniBLOC SOT-227 B M4 screws (4x) supplied
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