Datasheet DS90LV019TMTCX, DS90LV019TMTC Datasheet (NSC)

Page 1
DS90LV019
3.3V or 5V LVDS Driver/Receiver
General Description
The DS90LV019 is a Driver/Receiver designed specifically for the high speed low power point-to-point interconnect ap­plications. The device operates from a single 3.3V or 5.0V power supply and includes one differential line driver and one receiver. The DS90LV019 features an independent driver and receiver with TTL/CMOS compatibility (D
IN
R
OUT
). The logic interface provides maximum flexibility as 4
separate lines are provided (D
IN
, DE, RE, and R
OUT
). The device also features a flow-through pin out which allows easy PCB routing for short stubs between its pins and the connector. The driver has 3.5 mA output loop current.
The driver translates between TTL levels (single-ended) to Low Voltage DifferentialSignaling levels. This allows for high speed operation, while consuming minimal power with re­duced EMI. In addition, the differential signaling provides common-mode noise rejection.
The receiver threshold is
±
100 mV over a±1V common­mode range and translates the low swing differential levels to standard (TTL/CMOS) levels.
Features
n LVDS Signaling n 3.3V or 5.0V operation n Low power CMOS design n Balanced Output Impedance n Glitch free power up/down (Driver disabled) n High Signaling Rate Capacity (above 100 Mbps) n Ultra Low Power Dissipation
n
±
1V Common-Mode Range
n
±
100 mV Receiver Sensitivity
n Product offered in SOIC and TSSOP packages n Flow-Through Pin Out n Industrial Temperature Range Operation
Connection Diagram
Block Diagram
TRI-STATE®is a registered trademark of National Semiconductor Corporation.
DS100053-1
Order Number DS90LV019TM or DS90LV019TMTC
See NS Package Number M14A or MTC14
DS100053-2
August 2000
DS90LV019 3.3V or 5V LVDS Driver/Receiver
© 2000 National Semiconductor Corporation DS100053 www.national.com
Page 2
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.
Supply Voltage V
CC
6.0V
Enable Input Voltage (DE, RE)
−0.3V to (VCC+0.3V)
Driver Input Voltage (D
IN
) −0.3V to (VCC+ 0.3V)
Receiver Output Voltage
(R
OUT
) −0.3V to (VCC+ 0.3V)
Driver Output Voltage (DO
±
) −0.3V to +3.9V
Receiver Input Voltage (RI
±
) −0.3V to (VCC+ 0.3V) Driver Short Circuit Current Continuous ESD (Note 4)
(HBM, 1.5 k, 100 pF)
>
2.0 kV
(EIAJ, 0 , 200 pF)
>
200 V
Maximum Package Power Dissipation at 25˚C
SOIC 960 mW
Derate SOIC Package 7.7mW/˚C TSSOP 790 mW
Derate TSSOP Package 6.3mW/˚C Storage Temperature Range −65˚C to +150˚C Lead Temperature
(Soldering, 4 sec.) 260˚C
Recommended Operating Conditions
Min Max Units
Supply Voltage (V
CC
) or 3.0 3.6 V
Supply Voltage (V
CC
) 4.5 5.5 V Receiver Input Voltage 0.0 2.4 V Operating Free Air
Temperature T
A
−40 +85 ˚C
DC Electrical Characteristics
TA= −40˚C to +85˚C unless otherwise noted, VCC= 3.3±0.3V. (Notes 2, 3)
Symbol Parameter Conditions Pin Min Typ Max Units
DIFFERENTIAL DRIVER CHARACTERISTICS
V
OD
Output Differential Voltage RL= 100(
Figure 1
) DO+,
DO−
250 350 450 mV
V
OD
VODMagnitude Change 660mV
V
OS
Offset Voltage 1 1.25 1.7 V
V
OS
Offset Magnitude Change 5 60 mV
I
OZD
TRI-STATE®Leakage V
OUT=VCC
or GND, DE = 0V −10
±
1 +10 µA
I
OXD
Power-Off Leakage V
OUT
= 3.6V or GND, VCC= 0V −10
±
1 +10 µA
I
OSD
Output Short Circuit Current V
OUT
= 0V, DE = V
CC
−10 −6 −4 mA
DIFFERENTIAL RECEIVER CHARACTERISTICS
V
OH
Voltage Output High VID = +100 mV IOH= −400 µA R
OUT
2.9 3.3 V
Inputs Open 2.9 3.3 V
V
OL
Voltage Output Low IOL= 2.0 mA, VID = −100 mV 0.1 0.4 V
I
OS
Output Short Circuit Current V
OUT
= 0V −75 −34 −20 mA
V
TH
Input Threshold High RI+,
RI−
+100 mV
V
TH
Input Threshold Low −100 mV
I
IN
Input Current VIN= +2.4V or 0V, VCC= 3.6V or
0V
−10
±
1 +10 µA
DEVICE CHARACTERISTICS
V
IH
Minimum Input High Voltage DIN,
DE, RE
2.0 V
CC
V
V
IL
Maximum Input Low Voltage GND 0.8 V
I
IH
Input High Current VIN=VCCor 2.4V
±
1
±
10 µA
I
IL
Input Low Current VIN= GND or 0.4V
±
1
±
10 µA
V
CL
Input Diode Clamp Voltage I
CLAMP
= −18 mA −1.5 −0.7 V
I
CCD
Power Supply Current DE = RE = V
CC
V
CC
9 12.5 mA
I
CCR
DE=RE=0V 4.5 7.0 mA
I
CCZ
DE = 0V, RE = V
CC
3.7 7.0 mA
I
CC
DE=VCC,RE=0V 15 20 mA
C
D output
Capacitance DO+,
DO−
5pF
C
R input
Capacitance RI+,
RI−
5pF
DS90LV019
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DC Electrical Characteristics
TA= −40˚C to +85˚C unless otherwise noted, VCC= 5.0±0.5V. (Notes 2, 3)
Symbol Parameter Conditions Pin Min Typ Max Units
DIFFERENTIAL DRIVER CHARACTERISTICS
V
OD
Output Differential Voltage RL= 100(
Figure 1
) DO+,
DO−
250 360 450 mV
V
OD
VODMagnitude Change 660mV
V
OS
Offset Voltage 1 1.25 1.8 V
V
OS
Offset Magnitude Change 5 60 mV
I
OZD
TRI-STATE Leakage V
OUT=VCC
or GND, DE = 0V −10
±
1 +10 µA
I
OXD
Power-Off Leakage V
OUT
= 5.5V or GND, VCC= 0V −10
±
1 +10 µA
I
OSD
Output Short Circuit Current V
OUT
= 0V, DE = V
CC
−10 −6 −4 mA
DIFFERENTIAL RECEIVER CHARACTERISTICS
V
OH
Voltage High VID = +100 mV IOH= −400 µA R
OUT
4.3 5.0 V
Inputs Open 4.3 5.0 V
V
OL
Voltage Output Low IOL= 2.0 mA, VID = −100 mV 0.1 0.4 V
I
OS
Output Short Circuit Current V
OUT
= 0V −150 −75 −40 mA
V
TH
Input Threshold High RI+,
RI−
+100 mV
V
TH
Input Threshold Low −100 mV
I
IN
Input Current VIN= +2.4V or 0V, VCC= 5.5V or
0V
−15
±
1 +15 µA
DEVICE CHARACTERISTICS
V
IH
Minimum Input High Voltage DIN,
DE ,RE
2.0 V
CC
V
V
IL
Maximum Input Low Voltage GND 0.8 V
I
IH
Input High Current VIN=VCCor 2.4 V
±
1
±
10 µA
I
IL
Input Low Current VIN= GND or 0.4V
±
1
±
10 µA
V
CL
Input Diode Clamp Voltage I
CLAMP
= −18 mA −1.5 −0.8 V
I
CCD
Power Supply Current DE = RE = V
CC
V
CC
12 19 mA
I
CCR
DE=RE=0V 5.8 8 mA
I
CCZ
DE = 0V, RE = V
CC
4.5 8.5 mA
I
CC
DE=VCC,RE=0V 18 48 mA
C
D output
Capacitance DO+,
DO−
5pF
C
R input
Capacitance RI+,
RI−
5pF
Note 1: “Absolute Maximum Ratings” are these beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the device should be operated at these limits. The table of “Electrical Characteristics” provides conditions for actual device operation.
Note 2: All currents into device pins arepositive;allcurrentsout of device pins are negative. All voltages are referenced to device ground unless otherwise specified. Note 3: All typicals are given for V
CC
= +3.3V or +5.0V and TA= +25˚C, unless otherwise stated.
Note 4: ESD Rating:
HBM (1.5 k, 100 pF)
>
2.0 kV
EIAJ (0, 200 pF)
>
200V.
Note 5: C
L
includes probe and fixture capacitance.
Note 6: Generator waveforms for all tests unless otherwise specified;f=1MHz, Z
O
=50Ω,tr=tf≤6.0 ns (0%–100%).
AC Electrical Characteristics
TA= −40˚C to +85˚C, VCC= 3.3V±0.3V. (Note 6)
Symbol Parameter Conditions Min Typ Max Units DRIVER TIMING REQUIREMENTS
t
PHLD
Differential Propagation Delay High to Low RL= 100,
C
L
=10pF
(
Figure 2
Figure 3
)
2.0 4.0 6.5 ns
t
PLHD
Differential Propagation Delay Low to High 1.0 5.6 7.0 ns
t
SKD
Differential Skew |t
PHLD−tPLHD
| 0.4 1.0 ns
t
TLH
Transition Time Low to High 0.2 0.7 3.0 ns
t
THL
Transition Time High to Low 0.2 0.8 3.0 ns
DS90LV019
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Page 4
AC Electrical Characteristics (Continued)
TA= −40˚C to +85˚C, VCC= 3.3V±0.3V. (Note 6)
Symbol Parameter Conditions Min Typ Max Units DRIVER TIMING REQUIREMENTS
t
PHZ
Disable Time High to Z RL= 100,
C
L
=10pF
(
Figure 4
Figure 5
)
1.5 4.0 8.0 ns
t
PLZ
Disable Time Low to Z 2.5 5.3 9.0 ns
t
PZH
Enable Time Z to High 4.0 6.0 8.0 ns
t
PZL
Enable Time Z to Low 3.5 6.0 8.0 ns
RECEIVER TIMING REQUIREMENTS
t
PHLD
Differential Propagation Delay High to Low CL=10pF,
VID = 200 mV (
Figure 6
Figure 7
)
3.0 5.8 7.0 ns
t
PLHD
Differential Propagation Delay Low to High 3.0 5.6 9.0 ns
t
SKD
Differential Skew |t
PHLD−tPLHD
| 0.55 1.5 ns
t
r
Rise Time 0.15 2.0 3.0 ns
t
f
Fall Time 0.15 0.9 3.0 ns
t
PHZ
Disable Time High to Z RL= 500,
C
L
=10pF
(
Figure 8
Figure 9
)
3.0 4.0 6.0 ns
t
PLZ
Disable Time Low to Z 3.0 4.5 6.0 ns
t
PZH
Enable Time Z to High 3.0 6.0 8.0 ns
t
PZL
Enable Time Z to Low 3.0 6.0 8.0 ns
AC Electrical Characteristics
TA= −40˚C to +85˚C, VCC= 5.0V±0.5V. (Note 6)
Symbol Parameter Conditions Min Typ Max Units DRIVER TIMING REQUIREMENTS
t
PHLD
Differential Propagation Delay High to Low RL= 100,
C
L
=10pF
(
Figure 2
Figure 3
)
2.0 3.3 6.0 ns
t
PLHD
Differential Propagation Delay Low to High 1.0 3.3 5.0 ns
t
SKD
Differential Skew |t
PHLD−tPLHD
| 0.6 1.0 ns
t
TLH
Transition Time Low to High 0.15 0.9 3.0 ns
t
THL
Transition Time High to Low 0.15 1.2 3.0 ns
t
PHZ
Disable Time High to Z RL= 100,
C
L
=10pF
(
Figure 4
Figure 5
)
1.5 3.5 7.0 ns
t
PLZ
Disable Time Low to Z 3.0 5.2 9.0 ns
t
PZH
Enable Time Z to High 2.0 4.5 7.0 ns
t
PZL
Enable Time Z to Low 2.0 4.5 7.0 ns
RECEIVER TIMING REQUIREMENTS
t
PHLD
Differential Propagation Delay High to Low CL=10pF,
VID = 200 mV (
Figure 6
Figure 7
)
3.0 6.0 8.0 ns
t
PLHD
Differential Propagation Delay Low to High 3.0 5.6 8.0 ns
t
SKD
Differential Skew |t
PHLD−tPLHD
| 0.7 1.6 ns
t
r
Rise Time 0.15 0.8 3.0 ns
t
f
Fall Time 0.15 0.8 3.0 ns
t
PHZ
Disable Time High to Z RL= 500,
C
L
=10pF
(
Figure 8
Figure 9
)
3.0 3.5 4.5 ns
t
PLZ
Disable Time Low to Z 3.5 3.6 7.0 ns
t
PZH
Enable Time Z to High 3.0 5.0 7.0 ns
t
PZL
Enable Time Z to Low 3.0 5.0 7.0 ns
DS90LV019
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Test Circuits and Timing Waveforms
DS100053-3
FIGURE 1. Differential Driver DC Test Circuit
DS100053-4
FIGURE 2. Differential Driver Propagation Delay and Transition Test Circuit
DS100053-5
FIGURE 3. Differential Driver Propagation and Transition Time Waveforms
DS100053-6
FIGURE 4. Driver TRI-STATE Delay Test Circuit
DS90LV019
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Test Circuits and Timing Waveforms (Continued)
DS100053-7
FIGURE 5. Driver TRI-STATE Delay Waveforms
DS100053-8
FIGURE 6. Receiver Propagation Delay and Transition Time Test Circuit
DS100053-9
FIGURE 7. Receiver Propagation Delay and Transition Time Waveforms
DS100053-10
FIGURE 8. Receiver TRI-STATE Delay Test Circuit
DS90LV019
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Test Circuits and Timing Waveforms (Continued)
Typical Application Diagram
Applications Information
The DS90LV019 has two control pins, which allows the de­vice to operate as a driver, a receiver or both driver and a re­ceiver at the same time. There are a few common practices which should be implied when designing PCB for LVDS sig­naling. Recommended practices are:
Use at least 4 PCB board layer (LVDS signals, ground, power and TTL signals).
Keep drivers and receivers as close to the (LVDS port side) connector as possible.
Bypass each LVDS device and also use distributed bulk capacitance. Surface mount capacitors placed close to power and ground pins work best. Two or three multi­layer ceramic (MLC) surface mount capacitors 0.1 µF,
and 0.01 µF in parallel should be used between each V
CC
and ground. The capacitors should be as close as pos­sible to the V
CC
pin.
Use controlled impedance traces which match the differ­ential impedance of your transmission medium (i.e., Cable) and termination resistor.
Use the termination resistor which best matches the dif­ferential impedance of your transmission line.
Isolate TTL signals from LVDS signals.
MEDIA (CABLE AND CONNECTOR) SELECTION:
Use controlled impedance media. The cables and con­nectors should have a matched differential impedance of about 100.
DS100053-11
FIGURE 9. Receiver TRI-STATE Delay Waveforms TRI-STATE Delay Waveforms
DS100053-13
FIGURE 10. Terminated Input Fail-Safe Circuit
DS100053-12
DS90LV019
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Applications Information (Continued)
Balanced cables (e.g., twisted pair) are usually better than unbalanced cables (ribbon cable, simple coax) for noise reduction and signal quality.
For cable distances<0.5m, most cables can be made to work effectively. For distances 0.5m d 10m, CAT 3 (category 3) twisted pair cable works well and is readily available and relatively inexpensive. For distances
>
10m, and high data rates CAT 5 twisted pair is recom-
mended.
There are three Fail-Safe scenarios, open input pins, shorted inputs pins and terminated input pins. The first case is guaranteed for DS90LV019. A HIGH state on R
OUT
pin can be achieved by using two external resistors
(one to V
CC
and one to GND) per
Figure 10
(Terminated
Input Fail-Safe Circuit). R1 and R2 should be R
T
to limit
the loading to the LVDS driver . R
T
is selected to match
the impedance of the cable.
TABLE 1. Functional Table
MODE SELECTED DE RE
DRIVER MODE H H RECEIVER MODE L L TRI-STATE MODE L H
FULL DUPLEX MODE H L
TABLE 2. Transmitter Mode
INPUTS OUTPUTS
DE DI DO+ DO−
HL L H HH H L H2
>
&
>
0.8 X X
LX Z Z
X = High or Low logic state Z = High impedance state L = Low state H = High state
TABLE 3. Receiver Mode
INPUTS OUTPUT
RE
(RI+) − (RI−)
LL(
<
−100 mV) L
LH(
>
+100 mV) H
L 100 mV
>&>
−100 mV X
HXZ
X = High or Low logic state Z = High impedance state L = Low state H = High state
TABLE 4. Device Pin Description
Pin Name Pin # Input/Output Description
D
IN
2 I TTL Driver Input
DO
±
11, 12 O LVDS Driver Outputs
RI
±
9, 10 I LVDS Receiver Inputs
R
OUT
4 O TTL Receiver Output
RE
8 I Receiver Enable TTL Input (Active Low)
DE 1 I Driver Enable TTL Input (Active High)
GND 7 NA Ground
V
CC
14 NA Power Supply (3.3V±0.3V or 5.0V±0.5V)
DS90LV019
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Physical Dimensions inches (millimeters) unless otherwise noted
Order Number DS90LV019TM
NS Package Number M14A
DS90LV019
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Physical Dimensions inches (millimeters) unless otherwise noted (Continued)
LIFE SUPPORT POLICY
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
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Americas Tel: 1-800-272-9959 Fax: 1-800-737-7018 Email: support@nsc.com
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Tel: 81-3-5639-7560 Fax: 81-3-5639-7507
www.national.com
Order Number DS90LV019TMTC
NS Package Number MTC14
DS90LV019 3.3V or 5V LVDS Driver/Receiver
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
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