Datasheet DS90C031B Datasheet (National Semiconductor)

Page 1
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DS90C031B LVDS Quad CMOS Differential Line Driver
DS90C031B LVDS Quad CMOS Differential Line Driver
March 1999
General Description
The DS90C031B is a quad CMOS differential line driver de­signed for applications requiring ultra low power dissipation and high data rates. The device is designed to support data rates in excess of 155.5 Mbps(77.7 MHz) utilizing Low Volt­age Differential Signaling (LVDS) technology.
In addition, the DS90C031B provides power-off high imped­ance LVDS outputs. This feature assures minimal loading ef­fect on the LVDS bus lines when V
The DS90C031B and companion line receiver (DS90C032B) provide a new alternative to high power pseudo-ECL devices for high speed point-to-point interface applications.
is not present.
CC
®
function
Features
>
n
155.5 Mbps (77.7 MHz) switching rates
n High impedance LVDS outputs with power-off
±
n
350 mV differential signaling
n Ultra low power dissipation n 400 ps maximum differential skew (5V, 25˚C) n 3.5 ns maximum propagation delay n Industrial operating temperature range n Pin compatible with DS26C31, MB571 (PECL) and
41LG (PECL)
n Conforms to ANSI/TIA/EIA-644 LVDS standard n Offered in narrow and wide body SOIC package n Fail-safe logic for floating inputs
Connection Diagram Functional Diagram
Dual-In-Line
DS100989-1
Order Number
DS90C031BTM,
or DS90C031BTWM
See NS Package Number
M16A or M16B
DS100989-2
Driver Truth Table
Enables Input Outputs
EN EN* D
LHXZZ All other combinations L L H of ENABLE inputs H H L
TRI-STATE®is a registered trademark of National Semiconductor Corporation.
© 1999 National Semiconductor Corporation DS100989 www.national.com
D
IN
OUT+
D
OUT−
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Absolute Maximum Ratings (Note 1)
Supply Voltage (V Input Voltage (D Enable Input Voltage (EN, EN*) −0.3V to (V Output Voltage (D Short Circuit Duration
(D
OUT+,DOUT−
Maximum Package Power Dissipation
M Package 1068 mW WM Package 1562 mW
Derate M Package 8.5 mW/˚C above +25˚C
) −0.3V to +6V
CC
) −0.3V to (VCC+ 0.3V)
IN
OUT+,DOUT−
) −0.3V to +5.8V
CC
+ 0.3V)
) Continuous
@
+25˚C
Lead Temperature Range
Soldering (4 sec.) +260˚C
Maximum Junction
Temperature +150˚C
ESD Rating (Note 7)
(HBM, 1.5 k, 100 pF) 2kV (EIAJ, 0 , 200 pF) 250V
Recommended Operating Conditions
Min Typ Max Units
Supply Voltage (V Operating Free Air Temperature (T
DS90C031BT −40 +25 +85 ˚C
) +4.5 +5.0 +5.5 V
CC
)
A
Derate WM Package 12.5 mW/˚C above +25˚C Storage Temperature Range −65˚C to +150˚C
Electrical Characteristics
Over supply voltage and operating temperature ranges, unless otherwise specified. (Notes 2, 3)
Symbol Parameter Conditions Pin Min Typ Max Units
V V
V V
V V V V I V I I
I I
I
I
I
OS OZ
OFF CC
CCL
CCZ
Differential Output Voltage RL= 100(
OD1
Change in Magnitude of
OD1
OS
OS
OH OL IH IL
for Complementary
V
OD1
Output States Offset Voltage 1.10 1.25 1.35 V Change in Magnitude of
for Complementary
V
OS
Output States Output Voltage High RL= 100 1.41 1.60 V Output Voltage Low 0.90 1.07 V Input Voltage High DIN, Input Voltage Low GND 0.8 V Input Current VIN=VCC, GND, 2.5V or 0.4V −10 Input Clamp Voltage ICL= −18 mA −1.5 −0.8 V
CL
Output Short Circuit Current V
OUT
Output TRI-STATE Current EN = 0.8V and EN* = 2.0V,
V
OUT
Power - Off Leakage VO= 0V or 2.4V, VCC= 0V or Open −10 No Load Supply Current
Drivers Enabled Loaded Supply Current
Drivers Enabled No Load Supply Current
Drivers Disabled
DIN=VCCor GND V D
IN
RL= 100(all channels) V
IN=VCC
DIN=VCCor GND EN = GND, EN* = V
Figure 1
)D
D
OUT−
OUT+
,
250 345 450 mV
4 35 |mV|
5 25 |mV|
= 0V (Note 8) D
=0VorV
CC
D
EN, EN*
OUT−
OUT+
,
−10
CC
2.0 V
±
−3.5 −5.0 mA
±
±
1.7 3.0 mA
CC
1 +10 µA
1 +10 µA
1 +10 µA
= 2.5V or 0.4V 4.0 6.5 mA
15.4 21.0 mA
or GND (all inputs)
2.2 4.0 mA
CC
V
Switching Characteristics
VCC= +5.0V, TA= +25˚C (Notes 3, 6, 9)
Symbol Parameter Conditions Min Typ Max Units
t
PHLD
t
PLHD
t
SKD
t
SK1
t
TLH
t
THL
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Differential Propagation Delay High to Low RL= 100,CL=5pF
Figure 2
Differential Propagation Delay Low to High 1.0 2.1 3.0 ns Differential Skew |t
PHLD–tPLHD
| 0 80 400 ps
(
Channel-to-Channel Skew (Note 4) 0 300 600 ps Rise Time 0.35 1.5 ns Fall Time 0.35 1.5 ns
and
Figure 3
1.0 2.0 3.0 ns
)
Page 3
Switching Characteristics (Continued)
VCC= +5.0V, TA= +25˚C (Notes 3, 6, 9)
Symbol Parameter Conditions Min Typ Max Units
t
PHZ
t
PLZ
t
PZH
t
PZL
Disable Time High to Z RL= 100,CL=5pF
Figure 4
and
Figure 5
Disable Time Low to Z 2.5 10 ns
(
)
Enable Time Z to High 2.5 10 ns Enable Time Z to Low 2.5 10 ns
2.5 10 ns
Switching Characteristics
VCC= +5.0V±10%,TA= −40˚C to +85˚C (Notes 3, 6, 9)
Symbol Parameter Conditions Min Typ Max Units
t
PHLD
t
PLHD
t
SKD
t
SK1
t
SK2
t
TLH
t
THL
t
PHZ
t
PLZ
t
PZH
t
PZL
Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation.
Note 2: Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground except: V V
Note 3: All typicals are given for: V Note 4: Channel-to-Channel Skew is defined as the difference between the propagation delay of the channel and the other channels in the same chip with an event
on the inputs.
Note 5: Chip to Chip Skew is defined as the difference between the minimum and maximum specified differential propagation delays. Note 6: Generator waveform for all tests unless otherwise specified:f=1MHz, Z Note 7: ESD Ratings:
Note 8: Output short circuit current (I Note 9: C
Differential Propagation Delay High to Low RL= 100,CL=5pF
Figure 2
and
Differential Propagation Delay Low to High 0.5 2.1 3.5 ns Differential Skew |t
PHLD–tPLHD
| 0 80 900 ps
(
Figure 3
Channel-to-Channel Skew (Note 4) 0 0.3 1.0 ns Chip to Chip Skew (Note 5) 3.0 ns Rise Time 0.35 2.0 ns Fall Time 0.35 2.0 ns Disable Time High to Z RL= 100,CL=5pF
Figure 4
and
Disable Time Low to Z 2.5 15 ns
(
Figure 5
Enable Time Z to High 2.5 15 ns Enable Time Z to Low 2.5 15 ns
.
OD1
HBM (1.5 k, 100 pF) 2kV EIAJ (0, 200 pF) 250V
includes probe and jig capacitance.
L
= +5.0V, TA= +25˚C.
CC
=50Ω,tr≤6 ns, and tf≤ 6 ns.
O
) is specified as magnitude only, minus sign indicates direction only.
OS
0.5 2.0 3.5 ns
)
2.5 15 ns
)
OD1
and
Parameter Measurement Information
FIGURE 1. Driver VODand VOSTest Circuit
DS100989-3
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Parameter Measurement Information (Continued)
FIGURE 2. Driver Propagation Delay and Transition Time Test Circuit
FIGURE 3. Driver Propagation Delay and Transition Time Waveforms
DS100989-4
DS100989-5
FIGURE 4. Driver TRI-STATE Delay Test Circuit
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DS100989-6
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Parameter Measurement Information (Continued)
FIGURE 5. Driver TRI-STATE Delay Waveform
Typical Application
DS100989-7
FIGURE 6. Point-to-Point Application
Applications Information
LVDSdriversand receivers are intended to be primarily used in an uncomplicated point-to-point configuration as is shown in
Figure 6
vironment for the quick edge rates of the drivers. The re­ceiver is connected to the driver through a balanced media which may be a standard twisted pair cable, a parallel pair cable, or simply PCB traces. Typically, the characteristic im­pedance of the media is in the range of 100. A termination resistor of 100should be selected to match the media, and is located as close to the receiver input pins as possible. The termination resistor converts the current sourced by the driver into a voltage that is detected by the receiver. Other configurations are possible such as a multi-receiver configu­ration, but the effects of a mid-stream connector(s), cable stub(s), and other impedance discontinuities as well as ground shifting, noise margin limits, and total termination loading must be taken into account.
The DS90C031B differential line driver is a balanced current source design. A current mode driver, generally speaking has a high output impedance and supplies a constant cur­rent for a range of loads (a voltage mode driver on the other hand supplies a constant voltage for a range of loads). Cur­rent is switched through the load in one direction to produce a logic state and in the other direction to produce the other logic state. The typical output current is a mere 3.4 mA with a minimum of 2.5 mA, and a maximum of 4.5 mA. The cur­rent mode requires (as discussed above) that a resistive ter-
. This configuration provides a clean signaling en-
DS100989-8
mination be employed to terminate the signal and to com­plete the loop as shown in
Figure 6
. AC or unterminated configurations are not allowed. The 3.4 mA loop current will develop a differential voltage of 340 mV across the 100ter­mination resistor which the receiver detects with a 240 mV minimum differential noise margin neglecting resistive line losses (driven signal minus receiver threshold (340 mV – 100 mV = 240 mV). The signal is centered around +1.2V (Driver Offset, V
ure 7
. Note that the steady-state voltage (VSS) peak-to-peak swing is twice the differential voltage (V 680 mV.
) with respect to ground as shown in
OS
) and is typically
OD
Fig-
The current mode driver provides substantial benefits over voltage mode drivers, such as an RS-422 driver. Its quies­cent current remains relatively flat versus switching fre­quency.Whereas the RS-422 voltage mode driver increases exponentially in most case between 20 MHz–50 MHz. This is due to the overlap current that flows between the rails of the device when the internal gates switch. Whereas the cur­rent mode driver switches a fixed current between its output without any substantial overlap current. This is similar to some ECL and PECL devices, but without the heavy static I
requirements of the ECL/PECL designs. LVDS requires
CC
80%less current than similar PECL devices. AC specifica­tions for the driver are a tenfold improvement over other ex­isting RS-422 drivers.
The fail-safe circuitry guarantees that the outputs are en­abled and at a logic ’0’ (the true output is low and the complement output is high) when the inputs are floating.
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Page 6
Applications Information (Continued)
The TRI-STATE function allows the driver outputs to be dis­abled, thus obtaining an even lower power state when the transmission of data is not required.
The DS90C031B is electrically similar to the DS90C031, but differs by supporting high impedance LVDS outputs under
FIGURE 7. Driver Output Levels
Pin Descriptions
Pin No. Name Description
1, 7, 9, 15 D 2, 6, 10, 14 D 3, 5, 11, 13 D
4 EN Active high enable pin, OR-ed with EN* 12 EN* Active low enable pin, OR-ed with EN 16 V
8 GND Ground pin
Driver input pin, TTL/CMOS compatible
IN
Non-inverting driver output pin, LVDS levels
OUT+
Inverting driver output pin, LVDS levels
OUT−
Power supply pin, +5V±10
CC
power-off condition. This allows for multiple or redundant drivers to be used in certain applications. The DS90C031B is offered in a 300 mil. wide SOIC, allowing direct conversion to Quad PECL drivers to LVDS. It is also offered in a space sav­ing narrow SOIC (150 mil.) package.
For additional LVDS application information, please refer to National’s LVDS Owner’s Manual available through Nation­al’s website www.national.com/appinfo/lvds.
DS100989-9
%
Ordering Information
Operating Package Type/ Order Number
Temperature Number
−40˚C to +85˚C SOP/M16A DS90C031BTM
−40˚C to +85˚C SOP/M16B DS90C031BTWM
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Page 7
Typical Performance Characteristics
Power Supply Current vs Power Supply Voltage
Power Supply Current vs Power Supply Voltage
DS100989-10
Power Supply Current vs Temperature
DS100989-11
Power Supply Current vs Temperature
Output TRI-STATE Current vs Power Supply Voltage
DS100989-12
DS100989-14
DS100989-13
Output Short Circuit Current vs Power Supply Voltage
DS100989-15
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Page 8
Typical Performance Characteristics (Continued)
Differential Output Voltage vs Power Supply Voltage
Output Voltage High vs Power Supply Voltage
DS100989-16
Differential Output Voltage vs Ambient Temperature
DS100989-17
Output Voltage High vs Ambient Temperature
DS100989-18
Output Voltage Low vs Power Supply Voltage
DS100989-20
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DS100989-19
Output Voltage Low vs Ambient Temperature
DS100989-21
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Typical Performance Characteristics (Continued)
Offset Voltage vs Power Supply Voltage
Power Supply Current vs Frequency
DS100989-22
Offset Voltage vs Ambient Temperature
DS100989-23
Power Supply Current vs Frequency
Differential Output Voltage vs Load Resistor
DS100989-24
DS100989-26
DS100989-25
Differential Propagation Delay vs Power Supply Voltage
DS100989-27
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Page 10
Typical Performance Characteristics (Continued)
Differential Propagation Delay vs Ambient Temperature
Differential Skew vs Ambient Temperature
Differential Skew vs Power Supply Voltage
DS100989-29
DS100989-28
Differential Transition Time vs Power Supply Voltage
DS100989-30
Differential Transition Time vs Ambient Temperature
DS100989-32
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DS100989-31
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Physical Dimensions inches (millimeters) unless otherwise noted
16-Lead (0.150" Wide) Molded Small Outline Package, JEDEC
Order Number DS90C031BTM
NS Package Number M16A
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Page 12
Physical Dimensions inches (millimeters) unless otherwise noted (Continued)
16-Lead (0.300" Wide) Molded Small Outline Package, JEDEC
Order Number DS90C031BTWM
NS Package Number M16B
DS90C031B LVDS Quad CMOS Differential Line Driver
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