Datasheet DS75365N, DS75365MX, DS75365M Datasheet (NSC)

TL/F/7560

DS75365 Quad TTL-to-MOS Driver

June 1992

DS75365 Quad TTL-to-MOS Driver

General Description

The DS75365 is a quad monolithic integrated TTL-to-MOS
driver and interface circuit that accepts standard TTL input
signals and provides high-current and high-voltage output
levels suitable for driving MOS circuits. It is used to drive
address, control, and timing inputs for several types of MOS
RAMs including the 1103.

The DS75365 operates from the TTL 5V supply and the
MOS V

SS

and VBBsupplies in many applications. This de-

vice has been optimized for operation with V

CC2

supply volt-

age from 16V to 20V, and with nominal V

CC3

supply voltage

from 3V to 4V higher than V

CC2

. However, it is designed so

as to be usable over a much wider range of V

CC2

and V

CC3

.

In some applications the V

CC3

power supply can be elimi-

nated by connecting the V

CC3

to the V

CC2

pin.

Features

Y

Quad positive-logic NAND TTL-to-MOS driver

Y

Versatile interface circuit for use between TTL and
high-current, high-voltage systems

Y

Capable of driving high-capacitance loads

Y

Compatible with many popular MOS RAMs

Y

Interchangeable with Intel 3207

Y

V

CC2

supply voltage variable over side range to 24V

maximum

Y

V

CC3

supply voltage pin available

Y

V

CC3

pin can be connected to V

CC2

pin in some

applications

Y

TTL compatible diode-clamped inputs

Y

Operates from standard bipolar and MOS supply
voltages

Y

Two common enable inputs per gate-pair

Y

High-speed switching

Y

Transient overdrive minimizes power dissipation

Y

Low standby power dissipation

Schematic and Connection Diagrams

TL/F/7560– 1

Dual-In-Line Package

TL/F/7560– 2

Top View

Positive Logic: Y

e

A#E1#E2

Order Number DS75365N or DS75365WM

See NS Package Number M16B or N16A

C

1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A.

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.

Supply Voltage Range of V

CC1

b

0.5V to 7V

Supply Voltage Range of V

CC2

b

0.5V to 25V

Supply Voltage Range of V

CC3

b

0.5V to 30V
nput Voltage 5.5V
Inter-Input Voltage (Note 4) 5.5V
Storage Temperature Range

b

65§Ctoa150§C

Maximum Power Dissipation* at 25

§

C
Cavity Package 1509 mW
Molded Package 1476 mW
SO Package 1488 mW

Lead Temperature (Soldering, 10 sec) 300

§

C

* Derate cavity package 10.1 mW/§C above 25§C; derate molded package

11.8 mW/

§

C above 25§C, derate SO package 11.9 mW/§C above 25§C.

Operating Conditions

Min Max Units

Supply Voltage (V

CC1

) 4.75 5.25 V

Supply Voltage (V

CC2

) 4.75 24 V

Supply Voltage (V

CC3

)V

CC2

28 V
Voltage Difference Between 0 10 V
Supply Voltages: V

CC3–VCC2

Operating Ambient Temperature 0 70§C

Range (T

A

)

Electrical Characteristics (Notes 2 and 3)

Symbol Parameter Conditions Min Typ Max Units

V

IH

High-Level Input Voltage 2 V

V

IL

Low-Level Input Voltage 0.8 V

V

I

Input Clamp Voltage I

I

eb

12 mA

b

1.5 V

V

OH

High-Level Output Voltage V

CC3

e

V

CC2

a

3V, V

IL

e

0.8V, I

OH

eb

100 mAV

CC2

b

0.3 V

CC2

b

0.1 V

V

CC3

e

V

CC2

a

3V, V

IL

e

0.8V, I

OH

eb

10 mA V

CC2

b

1.2 V

CC2

b

0.9 V

V

CC3

e

V

CC2,VIL

e

0.8V, I

OH

eb

50 mAV

CC2

b

1V

CC2

b

0.7 V

V

CC3

e

V

CC2,VIL

e

0.8V, I

OH

eb

10 mA V

CC2

b

2.3 V

CC2

b

1.8 V

V

OL

Low-Level Output Voltage V

IH

e

2V, I

OL

e

10 mA 0.15 0.3 V

V

CC3

e

15V to 28V, V

IH

e

2V, I

OL

e

40 mA 0.25 0.5 V

V

O

Output Clamp Voltage V

I

e

0V, I

OH

e

20 mA V

CC2

a

1.5 V

I

I

Input Current at Maximum V

I

e

5.5V
1mA

Input Voltage

I

IH

High-Level Input Current V

I

e

2.4V A Inputs 40 mA

E1 and E2 Inputs 80 mA

I

IL

Low-Level Input Current V

I

e

0.4V A Inputs

b

1

b

1.6 mA

E1 and E2 Inputs

b

2

b

3.2 mA

I

CC1(H)

Supply Current from V

CC1,VCC1

e

5.25V, V

CC2

e

24V

48mA

All Outputs High V

CC3

e

28V, All Inputs at 0V, No Load

I

CC2(H)

Supply Current from V

CC2

,

b

2.2

a

0.25 mA

All Outputs High

b

2.2

b

3.2 mA

I

CC3(H)

Supply Current from V

CC3

,

2.2 3.5 mA

All Outputs High

I

CC1(L)

Supply Current from V

CC1,VCC1

e

5.25V, V

CC2

e

24V

31 47 mA

All Outputs Low V

CC3

e

28V, All Inputs at 5V, No Load

I

CC2(L)

Supply Current from V

CC2

,

3mA

All Outputs Low

I

CC3(L)

Supply Current from V

CC3

,

16 25 mA

All Outputs Low

I

CC2(H)

Supply Current from V

CC2,VCC1

e

5.25V, V

CC2

e

24V

0.25 mA

All Outputs High V

CC3

e

24V, All Inputs at 0V, No Load

I

CC3(H)

Supply Current from V

CC3

,

0.5 mA

All Outputs High

2

Electrical Characteristics (Notes 2, 3) (Continued)

Symbol Parameter Conditions Min Typ Max Units

I

CC2(S)

Supply Current from V

CC2

,V

CC1

e

0V, V

CC2

e

24V

0.25 mA

Stand-By Condition V

CC3

e

24V, All Inputs at 5V, No Load

I

CC3(S)

Supply Current from V

CC3

,

0.5 mA

Stand-By Condition

Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. Except for ‘‘Operating Temperature Range’’
they are not meant to imply that the devices should be operated at these limits. The table of ‘‘Electrical Characteristics’’ provides conditions for actual device
operation.

Note 2: Unless otherwise specified, min/max limits apply across the 0

§

Ctoa70§C range for the DS75365. All typical values are for T

A

e

25§C and V

CC1

e

5V and

V

CC2

e

20V and V

CC3

e

24V.

Note 3: All currents into device pins shown as positive, out of device pins as negative, all voltages referenced to ground unless otherwise noted. All values shown
as max or min on absolute value basis.

Note 4: This rating applies between any two inputs of any one of the gates.

Switching Characteristics V

CC1

e

5V, V

CC2

e

20V, V

CC3

e

24V, T

A

e

25§C

Symbol Parameter Conditions Min Typ Max Units

t

DLH

Delay Time, Low-to-High Level Output C

L

e

200 pF 11 20 ns

t

DHL

Delay Time, High-to-Low Level Output

R

D

e

24X

10 18 ns

t

TLH

Transition Time, Low-to-High Level Output

(

Figure 1

)

20 33 ns

t

THL

Transition Time, High-to-Low Level Output 20 33 ns

t

PLH

Propagation Delay Time, Low-to-High Level Output 10 31 48 ns

t

PHL

Propagation Delay Time, High-to-Low Level Output 10 30 46 ns

AC Test Circuit and Switching Time Waveforms

TL/F/7560– 3

TL/F/7560– 4

Note 1: The pulse generator has the following characteristics: PRRe1 MHz, Z

OUT

e

58X.

Note 2: C

L

includes probe and jig capacitance.

FIGURE 1. Switching Times, Each Driver

3

Typical Performance Characteristics

Output Current

High-Level Output Voltage vs

Output Current

High-Level Output Voltage vs

Output Current

Low-Level Output Voltage

TL/F/7560– 5

Characteristics

Voltage Transfer

Drivers) vs Frequency

Total Dissipation (All Four

vs Ambient Temperature

Low-to-High Level Output

Propagation Delay Time,

High-to-Low Level Output
vs Ambient Temperature

Propagation Delay Time,

V

CC2

Supply Voltage

Low-to-High Level Output vs

Propagation Delay Time,

vs V

CC2

Supply Voltage

High-to-Low Level Output

Propagation Delay Time,

Load Capacitance

Low-to-High Level Output vs

Propagation Delay Time,

Load Capacitance

High-to-Low Level Output vs

Propagation Delay Time,

TL/F/7560– 6

4

TL/F/7560– 7

FIGURE 2. Interconnection of DS75365 Devices

with 1103-Type Silicon-Gate MOS RAM

Typical Applications

The fast switching speeds of this device may produce unde­sirable output transient overshoot because of load or wiring
inductance. A small series damping resistor may be used to
reduce or eliminate this output transient overshoot. The op­timum value of the damping resistor depends on the specific
load characteristics and switching speed. A typical value
would be between 10X and 30X (

Figure 3

).

Note: R

D

j

10X to 30X (Optional)

TL/F/7560– 8

FIGURE 3. Use of Damping Resistor to Reduce or

Eliminate Output Transient Overshoot in Certain

DS75365 Applications

Thermal Information

POWER DISSIPATION PRECAUTIONS

Significant power may be dissipated in the DS75365 driver
when charging and discharging high-capacitance loads over
a wide voltage range at high frequencies. The total dissipa­tion curve shows the power dissipated in a typical DS75365
as a function of load capacitance and frequency. Average
power dissipation by this driver can be broken into three
components:

P

T(AV)

e

P

DC(AV)

a

P

C(AV)

a

P

S(AV)

where P

DC(AV)

is the steady-state power dissipation with the

output high or low, P

C(AV)

is the power level during charging

or discharging of the load capacitance, and P

S(AV)

is the
power dissipation during switching between the low and
high levels. None of these include energy transferred to the
load and all are averaged over a full cycle.

The power components per driver channel are:

P

DC(AV)

e

PLt

L

a

PHt

H

T

P

C(AV)jCVC

2

f

P

S(AV)

e

PLHt

LH

a

PHLt

HL

T

where the times are as defined in

Figure 4

.

PL,PH,PLH, and PHLare the respective instantaneous lev­els of power dissipation and C is load capacitance.

The DS75365 is so designed that P

S

is a negligible portion

of P

T

in most applications. Except at very high frequencies,

t

L

a

t

H

n

t

LH

a

tHLso that P

S

can be neglected. The total
dissipation curve for no load demonstrates this point. The
power dissipation contributions from all four channels are
then added together to obtain total device power.

The following example illustrates this power calculation
technique. Assume all four channels are operating identical­ly with C

e

100 pF, f

e

2 MHz, V

CC1

e

5V, V

CC2

e

20V,

V

CC3

e

24V and duty cyclee60% outputs high

(t

H

/Te0.6). Also, assume V

OH

e

20V, V

OL

e

0.1V, PSis

negligible, and that the current from V

CC2

is negligible when

the output is low.

On a per-channel basis using data sheet values:

P

DC(AV)

e

Ð

(5V)

#

4mA

4

J

a

(20V)

#

b

2.2 mA

4

J

a

(24V)

#

2.2 mA

4

J(

(0.6)

a

Ð

(5V)

#

31 mA

4

J

a

(20V)

#

0mA

4

J

a

(24V)

#

16 mA

4

J(

(0.4)

P

DC(AV)

e

58 mW per channel

P

C(AV)

j

(100 pF) (19.9V)

2

(2 MHz)

P

C(AV)

j

79 mW per channel.

For the total device dissipation of the four channels:

P

T(AV)

j

4 (58

a

79)

P

T(AV)

j

548 mW typical for total package.

TL/F/7560– 9

FIGURE 4. Output Voltage Waveform

5

6

Physical Dimensions inches (millimeter)

Molded Dual-In-Line Package (M)

Order Number DS75365WM

NS Package Number M16B

7

DS75365 Quad TTL-to-MOS Driver

Physical Dimensions inches (millimeter) (Continued)

Molded Dual-In-Line Package (N)

Order Number DS75365N

NS Package Number N16A

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