Datasheet DS75361N Datasheet (NSC)

DS75361 Dual TTL-to-MOS Driver

DS75361 Dual TTL-to-MOS Driver

September 1992

General Description

The DS75361 is a monolithic integrated dual TTL-to-MOS
driver interface circuit. The device accepts standard TTL
input signals and provides high-current and high-voltage
output levels for driving MOS circuits. It is used to drive
address, control, and timing inputs for several types of MOS
RAMs including the 1103 and MM5270 and MM5280.

The DS75361 operates from standard TTL 5V supplies and
the MOS V
been optimized for operation with V
16V to 20V; however, it is designed for use over a much
wider range of V

supply in many applications. The device has

SS

.

CC2

supply voltage from

CC2

Schematic and Connection Diagrams

(1/2 shown)

Features

Y

Capable of driving high-capacitance loads

Y

Compatible with many popular MOS RAMs

Y

V

supply voltage variable over wide range to 24V

CC2

Y

Diode-clamped inputs

Y

TTL compatible

Y

Operates from standard bipolar and MOS supplies

Y

High-speed switching

Y

Transient overdrive minimizes power dissipation

Y

Low standby power dissipation

Dual-In-Line Package

Top View

TL/F/7557– 1

Order Number DS75361N

See NS Package Number N08E

TL/F/7557– 3

C

1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A.

TL/F/7557

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.

Supply Voltage Range of V

Supply Voltage Range of V

CC1

CC2

(Note 1)

b

0.5 to 7V

b

0.5V to 25V

Input Voltage 5.5V

Inter-Input Voltage (Note 4) 5.5V

b

Storage Temperature Range

65§Ctoa150§C

Maximum Power Dissipation* at 25§C

Molded Package 1022 mW

Lead Temperature 1/16 inch from Case for

10 Seconds: N or P Package 200

*Derate molded package 8.2 mW/§above about 25§C.

Operating Conditions

Supply Voltage (V

Supply Voltage (V

) 4.75 5.25 V

CC1

) 4.75 24 V

CC2

Operating Temperature (TA)0

Min Max Units

a

70

C

§

C

§

Electrical Characteristics (Notes 2 and 3)

Symbol Parameter Conditions Min Typ Max Units

V

V

V

V

V

V

I

I

I

IH

I

IL

I

CC1(H)

I

CC2(H)

I

CC1(L)

I

CC2(L)

I

CC2(S)

High-Level Input Voltage 2 V

IH

Low-Level Input Voltage 0.8 V

IL

Input Clamp Voltage I

I

High-Level Output Voltage V

OH

Low-Level Output Voltage V

OL

Output Clamp Voltage V

O

Input Current at Maximum V
Input Voltage

High-Level Input Current

Low-Level Input Current

Supply Current from V
Outputs High

Supply Current from V
Outputs High

Supply Current from V
Outputs Low

Supply Current from V
Outputs Low

Supply Current from V
Stand-by Condition All Inputs at 5V, No Load

Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. Except for ‘‘Operating Temperature Range’’
they are not meant to imply that the devices should be operated at these limits. The table of ‘‘Electrical Characteristics’’ provides conditions for actual device
operation.

Note 2: Unless otherwise specified min/max limits apply across the 0

e

20V.

V

CC2

Note 3: All currents into device pins shown as positive, out of device pins as negative, all voltages referenced to ground unless otherwise noted. All values shown
as max or min on absolute value basis.

Note 4: This rating applies between the A input of either driver and the common E input.

, Both

CC1

, Both

CC2

, Both

CC1

, Both

CC2

,V

CC2

eb

12 mA

I

e

0.8V, I

IL

e

V

0.8V, I

IL

e

2V, I

IH

e

V

CC2

e

I

40 mA

OL

e

0V, I

I

e

5.5V 1 mA

I

e

V

2.4V

I

e

V

0.4V

I

eb

50 mAV

OH

eb

10 mA V

OH

e

10 mA 0.15 0.3 V

OL

15V to 24V, V

e

OH

e

2V,

IH

20 mA V

CC2

CC2

b

1V

b

2.3 V

b

CC2

b

CC2

0.25 0.5 V

A Inputs 40 mA

E Input 80 mA

b

A Inputs

E Input

1

b

2

24mA

e

V

5.25V, V

CC1

All Inputs at 0V, No Load

CC2

e

24V,

16 24 mA

e

V

5.25V, V

CC1

All Inputs at 5V, No Load

e

0V, V

CC1

Ctoa70§C range for the DS75361. All typical values are for T

§

CC2

CC2

e

24V,

711mA

e

24V,

b

1.5 V

0.7 V

1.8 V

a

1.5 V

CC2

b

1.6 mA

b

3.2 mA

0.5 mA

0.5 mA

e

A

25§C and V

CC1

e

5V and

2

Switching Characteristics V

CC1

e

5V, V

CC2

e

20V, T

e

25§C

A

Symbol Parameter Conditions Min Typ Max Units

t

DLH

t

DHL

t

TLH

t

THL

Delay Time, Low-to-High Level Output 11 20 ns

Delay Time, High-to-Low Level Output

Transition Time, Low-to-High Level Output

Transition Time, High-to-Low Level Output

e

C

L

e

R

D

(Figure 1)

390 pF,

10X

10 18 ns

25 40 ns

21 35 ns

tPLH Propagation Delay Time, Low-to-High Level Output 10 36 55 ns

t

PHL

Propagation Delay Time, High-to-Low Level Output 10 31 47 ns

AC Test Circuit and Switching Time Waveforms

TL/F/7557– 4

Note 1: The pulse generator has the following characteristics: PRRe1 MHz, Z

Note 2: C

includes probe and jig capacitance.

L

FIGURE 1. Switching Times, Each Driver

3

OUT

TL/F/7557– 5

e

50X.

Typical Performance Characteristics

High-Level Output Voltage vs
Output Current

Total Dissipation (Both Drivers)
vs Frequency

Propagation Delay Time,
Low-to-High Level Output

Supply Voltage

vs V

CC2

Low-Level Output Voltage vs
Output Current

Propagation Delay Time,
Low-to-High Level Output
vs Ambient Temperature

Propagation Delay Time,
High-to-Low Level Output

Supply Voltage

vs V

CC2

Voltage Transfer
Characteristics

Propagation Delay Time,
High-to-Low Level Output
vs Ambient Temperature

Propagation Delay Time,
Low-to-High Level Output
vs Load Capacitance

Propagation Delay Time,
High-to-Low Level Output
vs Load Capacitance

4

TL/F/7557– 2

Typical Applications

The fast switching speeds of this device may produce unde­sirable output transient overshoot because of load or wiring
inductance. A small series damping resistor may be used to
reduce or eliminate this output transient overshoot. The

optimum value of the damping resistor to use depends on
the specific load characteristics and switching speed. A typi­cal value would be between 10 X and 30X

(Figure 3)

.

FIGURE 2. Interconnection of DS75361 Devices with 1103 RAM

Thermal Information

POWER DISSIPATION PRECAUTIONS

Significant power may be dissipated in the DS75361 driver
when charging and discharging high-capacitance loads over
a wide voltage range at high frequencies. The total dissipa­tion curve shows the power dissipated in a typical DS75361
as a function of load capacitance and frequency. Average
power dissipated by this driver can be broken into three
components:

e

P

T(AV)

where P

DC(AV)

output high or low, P
or discharging of the load capacitance, and P
power dissipation during switching between the low and
high levels. None of these include energy transferred to the
load and all are averaged over a full cycle.

The power components per driver channel are:

P

DC(AV)

&

P

C(AV)

e

P

S(AV)

where the times are defined in

PL,PH,PLH, and PHLare the respective instantaneous lev­els of power dissipation and C is load capacitance.

a

P

DC(AV)

is the steady-state power dissipation with the

C(AV)

a

P

LtL

e

T

2

f

CV

C

a

PLHt

LH

T

a

P

PHt

PHLt

P

C(AV)

H

S(AV)

is the power level during charging

HL

Figure 4

.

S(AV)

is the

CC2

2

7mA

2

e

J(

J(

TL/F/7557– 7

20V, and

a

(0.6)

(0.4)

&

J

J

2

D

CC1

a

(20V)

a

(20V)

(2 MHz)

10X to 30X (Optional).

is a negligible portion

S

e

5V, V

0mA

#

#

Note: R

FIGURE 3. Use of Damping

Resistor to Reduce or Eliminate

Output Transient Overshoot in

TL/F/7557– 6

The DS75361 is so designed that P
of P

in most applications. Except at very high frequencies,

T

a

n

t

t

L

dissipation curve for no load demonstrates this point. The
power dissipation contributions from both channels are then
added together to obtain total device power.

The following example illustrates this power calculation
technique. Assume both channels are operating identically
with C
duty cycle

e

V

OH

current from V

On a per-channel basis using data sheet values:

P

DC(AV)

P

DC(AV)

P

C(AV)

P

C(AV)

For the total device dissipation of the two channels:

P

T(AV)

P

T(AV)

a

t

H

LH

e

200 pF, fe2 MHz, V

e

60% outputs high (tH/Te0.6). Also, assume

19.3V, V

CC2

e

(5V)

Ð

(5V)

Ð

e

47 mW per channel

&

(200 pF) (19.2V)

&

148 mW per channel.

&

2 (47

&

390 mW typical for total package.

Certain DS75361 Applications

tHLso that PScan be neglected. The total

e

0.1V, PSis negligible, and that the

OL

is negligible when the output is high.

2mA

2

#

16 mA

2

#

a

148)

FIGURE 4. Output Voltage Waveform

5

TL/F/7557– 8

Physical Dimensions inches (millimeters)

DS75361 Dual TTL-to-MOS Driver

Molded Dual-In-Line Package

Order Number DS75361N

See NS Package Number N08E

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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION. As used herein:

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systems which, (a) are intended for surgical implant support device or system whose failure to perform can
into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life
failure to perform, when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can effectiveness.
be reasonably expected to result in a significant injury
to the user.

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