Datasheet DS402ST14, DS402ST13, DS402ST12, DS402ST11, DS402ST10 Datasheet (DYNEX)

DS402ST

DS402ST

Rectifier Diode

Replaces March 1998 version, DS4183-2.3 DS4183-3.0 January 2000

APPLICATIONS

■ Rectification

■ Freewheel Diode

■ DC Motor Control

■ Power Supplies

■ Welding

■ Battery Chargers

FEATURES

■ Double Side Cooling

■ High Surge Capability

VOLTAGE RATINGS

Type Number Repetitive Peak

Reverse Voltage

V

RRM

V

DS402ST14
DS402ST13
DS402ST12
DS402ST11
DS402ST10
DS402ST09

Lower voltage grades available.

1400
1300
1200
1100
1000

900

Conditions

V

= V

RSM

RRM

+ 100V

KEY PARAMETERS

V

RRM

I

F(AV)

I

FSM

Outline type code: T.

See Package Details for further information.

1400V

505A

5600A

CURRENT RATINGS

Symbol Parameter Conditions

Double Side Cooled

I

F(AV)

I

F(RMS)

I

F

Mean forward current

RMS value

Continuous (direct) forward current

Single Side Cooled (Anode side)

I

F(AV)

I

F(RMS)

I

F

Mean forward current

RMS value

Continuous (direct) forward current

Half wave resistive load, T

= 100oC 793 A

T

case

T

= 100oC 640 A

case

Half wave resistive load, T

T

= 100oC 573 A

case

T

= 100oC 390 A

case

= 100oC 505 A

case

= 100oC 365 A

case

UnitsMax.

1/7

DS402ST

SURGE RATINGS

Symbol

I

FSM

2

tI

I

I

FSM

2

I

t

Surge (non-repetitive) forward current

2

t for fusing

Surge (non-repetitive) forward current

2

t for fusing A2s

I

Parameter

THERMAL AND MECHANICAL DATA

Symbol

R

th(j-c)

R

th(c-h)

Thermal resistance - junction to case

Thermal resistance - case to heatsink

Parameter

Conditions

10ms half sine; T

V

= 50% V

R

10ms half sine; T

V

Conditions Min. Max. Units

Double side cooled

Single side cooled

Clamping force 4.5kN
with mounting compound

= 175oC

case

- 1/4 sine

RRM

= 175oC

case

= 0

R

dc

Cathode dc - 0.16
Double side

Single side

Max. Units

4.5 kA

101 x 10

5.6 kA

155 x 10

- 0.08

0.02

-

- 0.04

3

A2s

3

o

C/W

o

C/W- 0.16Anode dc

o

C/W

o

C/W

o

C/W

T

vj

T

stg

-

Virtual junction temperature

Storage temperature range

Clamping force 3.5 5.0 kN

CHARACTERISTICS

V

I
V

FM

RRM

TO

r

T

Forward voltage

Peak reverse current

Threshold voltage

Slope resistance 0.84 mΩ

On-state (conducting) - 185

Reverse (blocking)

175

-

-55 200

ParameterSymbol

At V

, T

RRM

= 175˚C - 0.81 V

At T

vj

Conditions Min. Max. Units

= 25oC

case

= 175oC-15mA

case

- 1.25 VAt 450A peak, T

o

C

o

C

o

C

At Tvj = 175˚C -

2/7

CURVES

DS402ST

2000

Measured under pulse conditions

1500

- (A)

F

Tj = 25˚C

1000

Instantaneous forward current I

500

0

0.50 1.00 1.50 2.00
Instantaneous forward voltage V

Fig. 1 Maximum (limit) forward characteristics

- (V)

F

Tj = 175˚C

2.50

3/7

DS402ST

1200

1000

800

600

dc

Half wave

3 phase

6 phase

Mean power dissipation - (W)

400

200

0

0 200 400 600 800

Mean forward current I

Fig. 2 Dissipation curves

F(AV)

- (A)

4/7

DS402ST

12

I2t = Î2 x t

2

10

8

6

4

I2t

2

Peak half sine forward current - (kA)

0

1 101 2351020 50

ms Cycles at 50Hz

Duration

Fig. 3 Surge (non-repetitive) forward current vs time (with 50% V

100

90

I

2

t value - (A

80

70

2

s x 10

60

3

)

50

, T

RRM

= 175˚C)

case

1.0

Conduction

Effective thermal resistance

Junction to case ˚C/W

Double side

d.c.

Halfwave

3 phase 120˚

0.08

0.09

0.12

6 phase 60˚

0.1

0.01

Thermal impedance - (˚C/W)

0.001

Fig. 4 Transient thermal impedance - junction to case - (˚C/W)

Single side

0.16

0.17

0.20

-

-

Anode side cooled

Double side cooled

1010.10.010.001

Time - (s)

5/7

DS402ST

PACKAGE DETAILS

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.

2 holes Ø3.6 x 2.0 deep
(One in each electrode)

Cathode

Ø42 max
Ø19 nom

15.0

14.0

Ø19 nom

Ø37.5 max

Nominal weight: 50g

Clamping force: 4.5kN ±10%

Package outine type code: T

Anode

ASSOCIATED PUBLICATIONS

Title Application Note

Number

Calculating the junction temperature or power semiconductors AN4506
Recommendations for clamping power semiconductors AN4839
Thyristor and diode measurement with a multi-meter AN4853
Use of V

, rT on-state characteristic AN5001

TO

6/7

DS402ST

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc­tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.

Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).

DEVICE CLAMPS

Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre­loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm

Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839

HEATSINKS

Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.

http://www.dynexsemi.com

e-mail: [email protected]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

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Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

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© Dynex Semiconductor 2000 Publication No. DS4183-3 Issue No. 3.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

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