Datasheet DS3651N Datasheet (NSC)

DS1651/DS3651
Quad High Speed MOS Sense Amplifiers

DS1651/DS3651 Quad High Speed MOS Sense Amplifiers

June 1999

General Description

The DS1651/DS3651 is TTL compatible high speed circuits
intended for sensing in a broad range of MOS memory sys­tem applications. Switching speeds have been enhanced
over conventional sense amplifiers by application of Schot­tky technology, and TRI-STATE
fering a high impedance output state for bused organization.

The DS1651/DS3651 has active pull-up outputs and offers
open collector outputs providing implied “AND” operations.

®

strobing is incorporated, of-

Features

n High speed
n TTL compatible
n Input sensitivity —
n TRI-STATE outputs for high speed buses
n Standard supply voltages —
n Pin and function compatible with MC3430

Connection Diagram Truth Table

Dual-in-Line Package

DS007528-1

Top View

Order Number DS1651J, DS3651J or DS3651N

See NS Package Number J16A or N16A

L=Low logic state
H=High logic state
Open=TRI-STATE
X=Indeterminate state

Input Strobe

V

≥ 7mW

ID

= 0˚C to +70˚C

T

A

−7 mV ≤ V
= 0˚C to +70˚C

T

A

V

ID

= 0˚C to +70˚C

T

A

≤ −7 mV

≤ +7 mV

ID

±

7mV

±

5V

Output

DS3651

L
H

L
H

L
H

H

Open

X

Open

L

Open

TRI-STATE®is a registered trademark of National Semiconductor Corporation.

© 1999 National Semiconductor Corporation DS007528 www.national.com

Typical Applications

A Typical MOS Memory Sensing Application for a 4k work by 4-bit

Memory Arrangement Employing 1103 Type Memory Devices

Note: Only 4 devices are required for a 4k word by 16-bit memory system.

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Absolute Maximum Ratings (Note 2)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.

Power Supply Voltages

V

CC

V

EE

Differential-Mode Input Signal Voltage

Range, V

Common-Mode Input Voltage Range,

Strobe Input Voltage, V

IDR

V

ICR

I(S)

Strobe Temperature Range −65˚C to +150˚C

Maximum Power Dissipation (Note 1) at 25˚C

Cavity Package
Molded Package

Lead Temp. (Soldering, 10 seconds) 300˚C

+7 V

−7 V

±

6V

±

5V

5.5 V

1509 mW
1476 mW

Operating Conditions

Supply Voltage (V

DS1651
DS3651

Supply Voltage (V

DC
DC

DC

DC
DC

DS1651
DS3651

Operating Temperature (T

DS1651

DS3651
Output Load Current, (I
Differential Mode Input

Voltage Range, (V
Common-Mode Input

Voltage Range, (V
Input Voltage Range

(Any Input to GND), (V

)

Min Max Unit

CC

)

EE

OL

) −5.0 +5.0 V

IDR

) −3.0 +3.0 V

ICR

)

A

4.5

4.75

−4.5

−4.75

−550+125

5.5

5.25

−5.5

−5.25

+70

V
V

V
V

˚C
˚C

)16mA

) −5.0 +3.0 V

IR

Electrical Characteristics

=

V

5V

CC

Symbol Parameter Conditions Min Typ Max Unit

V

IS

V

IO

I

IB

I

IO

V

IL(S)

V

IH(S)

I

IL(S)

I

IL(S)

V

OH

V

OL

I

OS

I

OFF

I

CC

I

EE

=

, Min ≤ TA≤ Max, unless otherwise noted (Notes 3, 4)

DC,VEE

Input Sensitivity (Note 6)
(Common-Mode Voltage
Range)
V

ICR

−5 V

DC

= −3V ≤ VIN≤ +3V

Min ≤ V
Min ≥ V

CC
EE

≤ Max

≥ Max

±

7.0 mV

Input Offset Voltage 2mV
Input Bias Current VCC= Max, VEE= Max 20 µA
Input Offset Current 0.5 µA
Strobe Input Voltage

(Low State)
Strobe Input Voltage

(High State)

2V

0.8 V

Strobe Current (Low State) VCC= Max, VEE= Max, VIN= 0.4V −1.6 mA
Strobe Current (High State) VCC= Max,

= Max

V

EE

Output Voltage (High States) VCC= Min,

= Min

V

EE

Output Voltage (Low State) VCC= Min,

= Min

V

EE

V

= 2.4V DS3651 40 µA

IN

V

IN=VCC

V

= 2.4V DS1651 100 µA

IN

V

IN=VCC

I

= −400 µA DS1651/DS3651

O

=

I

16 mA DS3651 0.45

O

2.4 V

DS1651 0.50

1mA

1mA

V

Output Current Short Circuit VCC= Max, VEE= Max, (Note 5) DS1651/DS3651 −18 −70 mA
Output Disable Leakage

Current
High Logic Level Supply

Current
High Logic Level Supply

Current

VCC= Max, VEE= Max DS3651 40 µA

DS1651 100 µA

VCC= Max, VEE= Max

VCC= Max, VEE= Max

45 60 mA

−17 −30 mA

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Switching Characteristics

=

V

5V

CC

Symbol Parameter Conditions Min Typ Max Units

t

PHL(D)

t

PLH(D)

t

POH(S)

t

PHO(S)

t

POL(S)

t

PLO(S)

Note 1: Derate cavity package 10.1 mW/˚C above 25˚C; derate molded package 11.8 mW/˚C above 25˚C.
Note 2: “AbsoluteMaximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. Except for “Operating Temperature Range” they

are not meant to imply that the device should be operated at these limits. The table of “Electrical Characteristics” provides conditions for actual device operation.
Note 3: Unlessotherwise specified min/max limits apply across the 0˚C to +70˚C range for the DS3651 and across the −55˚C to +125˚C range for the DS1651. All

typical values are for T
Note 4: Allcurrents into device pins shown as positive, out of device pins as negative, all voltages referenced to ground unless otherwise noted. All values shown

as max or min on absolute value basis.

Note 5: Only one output at a time should be shorted.
Note 6: Aparameter which is of primary concern when designing with sense amplifiers is, what is the minimum differential input voltage required at the sense am-

plifier input terminals to guarantee a given output logic state. This parameter is commonly referred to as threshold voltage. It is well known that design considerations
of threshold voltage are plagued by input offset currents, bias currents, network source resistances, and voltage gain. As a design convenience, the DS1651 and
DS3651 are specified to a parameter called input sensitivity (V
a minimum input differential voltage to cause a given output logic state with respect to a maximum source impedance of 200Ω at each input.

DC,VEE

=

−5 V

=

25˚C unless otherwise noted.

DC,TA

High-to-Low Logic Level Propagation
Delay Time (Differential Inputs)

Low-to-High Logic Level Propagation
Delay Time (Differential Inputs)

TRI-STATE to High Logic Level
Propagation Delay Time (Strobe)

High Logic Level to TRI-STATE
Propagation Delay Time (Strobe)

TRI-STATE to Low Logic Level
Propagation Delay Time (Strobe)

Low Logic Level to TRI-STATE
Propagation Delay Time (Strobe)

=

A

25˚C, V

CC

=

5V and V

=

EE

5mV+VIS,

Figure 2

(
5mV+VIS,

Figure 2

(
(

Figure 1

(

Figure 1

(

Figure 1

(

Figure 1

−5V.

). This parameter takes into consideration input offset currents and bias currents, and guarantees

IS

DS1651/

)

DS3651
DS1651/

)

DS3651

) DS1651/

DS3651

) DS1651/

DS3651

) DS1651/

DS3651

) DS1651/

DS3651

23 45 ns

22 55 ns

16 21 ns

718ns

19 27 ns

14 29 ns

Switching Time Waveform

Note: Output of channel B shown under test, other channels are tested similarly.

Delay V1 V2 S1 S2 C

t

) 100 mV GND Closed Closed 15 pF

PLO(S)

t

POL(S)

t

PHO(S)

t

POH(S)

CLincludes jig and probe capacitance.

waveform characteristics: t

E

IN

PRR=1 MHz
Duty cycle=50

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%

100 mV GND Closed Open 50 pF

GND 100 mV Closed Closed 15 pF
GND 100 mV Open Closed 50 pF

TLH

and t

≤ 10 ns measured 10%to 90

THL

%

DS007528-3

L

AC Test Circuits

t

PLO(S)

DS007528-4

t

POL(S)

DS007528-6

FIGURE 1. Strobe Propagation Delay t

PLO(S),tPOL(S),tPHL(S)

t

PHO(S)

t

POH(S)

and t

DS007528-5

DS007528-7

POH(S)

Note: Output of channel B shown under test, other channels are tested similarly.

S1 at “B” for DS1651/DS3651, C

EINwaveform characteristics:

and t

t

TLH

PRR=1 MHz, duty cycle=500 ns

≤ 10 ns measured 10%to 90

THL

=

50 pF total for DS1651/DS3651.

L

%

FIGURE 2. Differential Input Propagation Delay t

DS007528-9

PLH(D)

and t

DS007528-8

PHL(D)

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Schematic Diagrams

DS1651/DS3651

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Typical Applications

Level Detector with Hysteresis

DS007528-11

Transfer Characteristics

and Equations for

Level Detector with Hysteresis

DS007528-12

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Typical Applications (Continued)

4-Bit Parallel A/D Converter

0

=

2

(A+B)(C+D)(E+F)(H+J)(K+L)(M+N)(P+R)(S)

1

=

2

(B+D)(F+J)(L+N)(R)

2

=

2

(D+J)(N)

3

=

2

J

Conversion time ) 50 ns

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DS007528-14

Physical Dimensions inches (millimeters) unless otherwise noted

Order Number DS1651J, DS1653J, DS3651J or DS3653J

Ceramic Dual-in-Line Package (J)

NS Package Number J16A

Molded Dual-in-Line Package (N)

Order Number DS3651N or DS3653N

NS Package Number N16A

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Notes

DS1651/DS3651 Quad High Speed MOS Sense Amplifiers

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NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL
COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:

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