Page 1
DS2223/DS2224
DS2223/DS2224
EconoRAM
FEATURES
• Low–cost, general–purpose, 256–bit memory
– DS2223 has 256–bit SRAM
– DS2224 has 32–bit ROM, 224–bit SRAM
• Reduces control, address and data interface to a
single pin
• Each DS2224 32–bit ROM is factory–lasered with a
unique serial number
• DS2224 portion of ROM with custom code and unique
serial number available
• Minimal operating power: 45 nanocoulombs per
transaction @1.5V typical
• Less than 15 nA standby current at 25°C
• Nonvolatile data retention easily achieved via low–
cost alkaline batteries or capacitors
• Directly connects to a port pin of popular microcontrol-
lers
• Operation from 1.2 to 5.5 volts
• Popular TO–92 or SOT–223 surface mount package
• Operates over industrial temperature range –40°C to
+85°C
PACKAGE OUTLINE
TO–92
123
123
See Mech. Drawings
Section
See Mech. Drawings
PIN CONNECTIONS
Pin 1 GND – Ground
Pin 2 DQ – Data In/Out
Pin 3 V
Pin 4 GND – Ground
CC
– Supply
SOT–223
1
234
TOP VIEWBOTTOM VIEW
Section
DESCRIPTION
The DS2223 and DS2224 EconoRAMs are fully static,
micro–powered, read/write memories in low–cost
TO–92 or SOT–223 packages. The DS2223 is organized as a serial 256 x 1 bit static read/write memory.
The DS2224’s first 32 bits are lasered with a unique ID
code at the time of manufacture; the remaining 224 bits
are static read/write memory. Signaling necessary for
reading or writing is reduced to just one interface lead.
Both the DS2223 and DS2224 are not recommended
for new designs. However, the parts will remain available until the year 2003, at least.
ORDERING INFORMATION
DS2223 256–bit SRAM – TO–92 Package
DS2223Z 256–bit SRAM – SOT–223 Package
DS2223T 1000 piece tape–and–reel of DS2223
DS2223Y 2500 piece tape–and–reel of DS2223Z
DS2224 32–bit serial number (ROM), 224–bit
SRAM – TO–92 Package
DS2224Z 32–bit serial number (ROM), 224–bit
SRAM – SOT–223 Package
DS2224T 1000 piece tape–and–reel of DS2224
DS2224Y 2500 piece tape–and–reel of DS2224Z
080598 1/10
Page 2
DS2223/DS2224
OPERATION
All communications to and from the EconoRAM are
accomplished via a single interface lead. EconoRAM
data is read and written through the use of time slots. All
data is preceded by a command byte to specify the type
of transaction. Once a specific transaction has been
initiated, either a read or a write, it must be completed for all memory locations before another
transaction can be started.
1–WIRE SIGNALLING
The EconoRAM requires strict protocols to insure data
integrity . The protocol consists of three types of signalling on one line: Write 0 time slot, Write 1 time slot and
Read Data time slot. All these signals are initiated by the
host.
READ/WRITE TIME SLOTS
The definitions of write and read time slots are illustrated
in Figures 1 through 3. All time slots are initiated by the
host driving the data line low. The falling edge of the data
line synchronizes the EconoRAM to the host by triggering a delay circuit in the EconoRAM. During write time
slots, the delay circuit determines when the EconoRAM
will sample the data line. For a read data time slot, if a “0”
is to be transmitted, the delay circuit determines how
long the EconoRAM will hold the data line low overriding
the 1 generated by the host. If the data bit is a “1”, the
EconoRAM will leave the read data time slot
unchanged.
COMMAND BYTE
The command byte to specify the type of transaction is
transmitted LSB first from the host to the EconoRAM
using write time slots. The first bit of the command byte
(see Figure 4) is a logic 1. This indicates to the EconoRAM that a command byte is being written. The next two
bits are the select bits which denote the physical
address of the EconoRAM that is to be accessed (set to
00 currently). The remaining five bits determine whether
a read or a write operation is to follow. If a write operation
is to be performed, all five bits are set to a logic 1 level. If
a read operation is to be performed, any or all of these
bits are set to a logic 0 level. All eight bits of the command byte are transmitted to the EconoRAM with a separate time slot for each bit.
READ OR WRITE TRANSACTION
Read or write transactions are performed by initializing
the EconoRAM to a known state, issuing a command
byte, and then generating the time slots to either read
EconoRAM contents or write new data. Each transaction consists of 264 time slots. Eight time slots transmit
the command byte, the remaining 256 time slots transfer the data bits. (See Figure 5.) Once a transaction is
started, it must be completed before a new transaction
can begin.
To initially set the EconoRAM into a known state, 264
Write Zero time slots must be sent by the host. These
Write Zero time slots will not corrupt the data in the EconoRAM since a command byte has not been written.
This operation will increment the address pointer internal to the EconoRAM to its maximum count value. Upon
reaching this maximum value, the EconoRAM will
ignore all additional Write Zero time slots issued to it and
the internal address pointer will remain locked at the top
count value. This condition is removed by the reception
of a Write One time slot, typically the first bit of a command byte.
Once the EconoRAM has been set into a known state,
the command byte is transmitted to the EconoRAM with
eight write time slots. This resets the address pointer
internal to the EconoRAM and prepares it for the
appropriate operation, either a read or a write.
After the command byte has been received by the EconoRAM, the host controls the transfer of data. In the
case of a read transaction, the host issues 256 read time
slots. In the case of a write transaction, the host issues
256 write time slots according to the data to be written.
All data is read and written least significant bit first.
Although the DS2224 has the first 32 bits replaced by
lasered ROM rather than SRAM, it requires 256 write
time slots for a complete write transaction. The data
being sent during the first 32 write time slots has no
effect on the DS2224 other than advancing the internal
address pointer. As stated previously, it is not possible
to change from read to write or vice versa before a transaction is completed.
080598 2/10
Page 3
READ/WRITE TIMING DIAGRAM
Write–One Time Slot Figure 1
DS2223/DS2224
V
PULLUP
V
PULLUP MIN
V
IH MIN
V
IL MAX
0V
t
LOW1
15 µs
Write–Zero Time Slot Figure 2
V
PULLUP
V
PULLUP MIN
V
IH MIN
V
IL MAX
0V
15 µs
60 µs <
1 µs <
1 µs <
SAMPLING WINDOW
60 µs
60 µs < t
t
1 µs <
REC
t
SLOT
DS2223/DS2224
SAMPLING WINDOW
60 µs
t
<
SLOT
t
< 15 µs
LOW1
t
<
REC
t
SLOT
DS2223/DS2224
t
LOW0
< t
SLOT
<
LOW0
<
t
REC
t
REC
Read–Data Time Slot Figure 3
V
PULLUP
V
PULLUP MIN
V
IH MIN
V
IL MAX
0V
RESISTOR
MASTER
DS2223/DS2224
t
LOWR
HOST SAMPLING
WINDOW
t
RDV
60 µs < t
SLOT
1 µs <
t
LOWR
0 <
t
RELEASE
t
1 µs <
REC
t
= 15 µs
RDV
t
SLOT
< 15 µs
<
<
< 45 µs
t
RELEASE
t
REC
080598 3/10
Page 4
DS2223/DS2224
COMMAND WORD Figure 4
MSB LSB
W/R
W/R W/R W/R W/R 001
ALL 1s – WRITE
ANY 0 – READ
READ/WRITE TRANSACTION Figure 5
LSB
COMMAND WORD
DS2224
264–BIT
TRANSACTION
COMMAND WORD ROM 224–BIT SRAM
INCREMENT ADDRESS POINTER
256–BIT SRAMDS2223
READ/WRITE FLOW
RECEIVE COMMAND WORD
(RESET ADDRESS POINTER)
READ/WRITE DATA BIT AND
SELECT BITS
8 BITS
080598 4/10
IS ADDRESS
POINTER = 256?
Y
HOLD ADDRESS POINTER
VALUE, WAIT FOR NEW
COMMAND WORD TO RESET
ADDRESS COUNTER
N
Page 5
TYPICAL CURRENT CONSUMPTION VS. BIT RATE Figure 6
4V @ +25°C
10 µA
1 µA
100 nA
CURRENT CONSUMPTION
10 nA
5 nA
10 bps 100 bps 1 kbps 10 kbps 100 kbps
BIT RATE
TYPICAL LEAKAGE CURRENT VS. TEMPERATURE Figure 7
15.0
VCC = 4.0V
DS2223/DS2224
129 pC/BIT
12.0
9.0
NANOAMPS
LEAKAGE CURRENT
6.0
3.0
0.0
–10 0 +10 +20 +30 +40 +50 +60 +70
TEMPERATURE (DEG. C)
080598 5/10
Page 6
DS2223/DS2224
1–WIRE INTERFACE
The 1–Wire interface has only a single line by definition;
it is important that host and EconoRAM be able to drive it
at the appropriate time. The EconoRAM is an open drain
part with an internal circuit equivalent to that shown in
Figure 8. The host can be the same equivalent circuit. If
a bidirectional pin is not available, separate output and
input pins can be tied together.
The 1–Wire interface requires a pull–up resistor with a
value of approximately 5 kΩ to system V
on the data
CC
signal line. The EconoRAM has an internal open–drain
driver with a 500 kΩ pull–down resistor to ground. The
open–drain driver allows the EconoRAM to be powered
by a small standby energy source, such as a single 1.5
volt alkaline battery, and still have the ability to produce
CMOS/TTL output levels. The pull–down resistor holds
the DQ pin at ground when the EconoRAM is not connected to the host.
APPLICATION EXAMPLES
EconoRAMs are extremely conservative with power.
Data can be retained in these small memories for as
long as a month using the energy stored in a capacitor.
Data is retained as long as the voltage on the V
CC
pin of
HOST TO ECONORAM INTERFACE Figure 8
V
CC
the EconoRAM (V
) is at least 1.2 volts. A typical cir-
CAP
cuit is shown in Figure 9.
When V
EconoRAM receives power directly from V
is applied, capacitor C1 is charged and the
CC
CC
. After
power is removed, the diode CR1 prevents current from
leaking back into the system, keeping the capacitor
charged.
In the standby mode, the EconoRAM typically consumes only 12 nA at 25°C. However, the power–down
process of the system can cause a slightly higher current drain. This is due to the fact that as system power
ramps down, the signal attached to the DQ pin of the
EconoRAM transitions slowly through the linear region,
while the V
voltage remains at its initial value. While
CAP
in this region, the part draws more current as a function
of the DQ pin voltage (see Figure 10).
The data retention time can be estimated with the aid of
Figure 1 1. In this figure, the vertical axis represents the
value of the capacitor C1; the horizontal axis is the data
retention time in hours. The two curves represent initial
V
voltages of 3 and 5 volts. These curves are based
CAP
on the assumption that the time the DQ pin is in the linear region is less than 100 ms.
TX
RX
080598 6/10
OPEN
DRAIN
5 kΩ
HOST ECONORAM
500 kΩ
V
CC
100 OHM MOSFET
RX
TX
Page 7
SUGGESTED CIRCUIT Figure 9
DS2223/DS2224
V
V
CAP
CC
V
CC
DQ
GND
Econo
Memory
ICC VS. DQ VOLTAGE Figure 10
SUPPLY CURRENT
(µA)
400
200
0
0 12345
+
C1
DQ PIN VOLTAGE
CR1
VCC = +5V
Room Temperature
SUPPLY CURRENT
<2 nA
080598 7/10
Page 8
DS2223/DS2224
DATA RETENTION TIME VS. CAPACITANCE Figure 11
CAPACITANCE
(µF)
10K
1K
100
10
0
0.1 1 10 100 1K 10K
TIME (hours)
Using Battery Backup
14 mA–Hr => 144 million transactions
3
DATA
PIN
2
DS2223
DS2224
1
Initial VCC Voltage
VCC = 3.0
V
CC
+
1.5V
EVEREADY
NO. 321
= 5.0
080598 8/10
Page 9
DS2223/DS2224
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground –0.5V to +6.5V
Operating Temperature –40°C to +85°C
Storage Temperature –55°C to +125°C
Soldering Temperature 260°C for 10 seconds
* This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS (–40°C to +85°C)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Data Pin DQ –0.5 6.0 V 1
Supply Voltage V
CC
1.2 5.5 V 1
DC ELECTRICAL CHARACTERISTICS (–40°C to +85°C; VCC=2.0V to 5.5V)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Input Logic Low V
Input Logic High V
Sink Current I
Output Logic Low V
Output Logic High V
Input Resistance I
Operating Current I
Standby Current I
IL
IH
L
OL
OH
R
OP
STBY
–0.5 0.4 0.8 V 1
VCC–0.5 6.0 V 1
1 2 mA 4
0.4 V 1
V
PUP
5.5 V 1, 2
500 kΩ 3
36 nC 5
2 25 nA 6
DC ELECTRICAL CHARACTERISTICS (–40°C to +85°C; VCC=1.4V ± 10%)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Input Logic Low V
Input Logic High V
Sink Current I
Output Logic Low V
Output Logic High V
Input Resistance I
Operating Current I
Standby Current I
IL
IH
L
OL
OH
R
OP
STBY
–0.5 0.2 V 1
1.0 6.0 V 1
1 2 mA 7
0.4 V 4
V
PUP
5.5 V 1, 2
500 kΩ 3
36 nC 5
2 15 nA 6
080598 9/10
Page 10
DS2223/DS2224
AC ELECTRICAL CHARACTERISTICS (–40°C to +85°C; VCC=1.4V ± 10%)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Time Slot t
Read Data Valid t
Release Time t
RELEASE
Write 1 Low Time t
Write 0 Low Time t
Data Setup Time t
Recovery Time t
SLOT
RDV
LOW1
LOW0
SU
REC
70 µs
exactly 15 µs
0 15 45 µs
1 15 µs
60 µs
1 µs 8
1 µs
AC ELECTRICAL CHARACTERISTICS (–40°C to +85°C; VCC=2.0V to 5.5V)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Time Slot t
Read Data Valid t
Release Time t
RELEASE
Write 1 Low Time t
Write 0 Low Time t
Data Setup Time t
Recovery Time t
SLOT
RDV
LOW1
LOW0
SU
REC
60 µs
exactly 15 µs
0 15 45 µs
1 15 µs
60 µs
1 µs 8
1 µs
NOTES:
1. All voltages are referenced to ground.
2. V
3. Input pull–down resistance to ground.
4. @ V
5. 36 nanocoulombs per 264 time slots @ 1.5V (see Figure 6).
6. See Figure 7 for typical values over temperature.
7. @ V
8. Read data setup time refers to the time the host must pull the 1–Wire line low to read a bit. Data is guaran-
= external pull–up voltage to system sypply.
PUP
=0.4V
OL
=0.2V
OL
teed to be valid within 1 µs of this falling edge and will remain valid for 14 µs minimum (15 µs total from falling
edge on the 1–Wire line).
080598 10/10
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