Datasheet DS2102SY18, DS2102SY17, DS2102SY16, DS2102SY15, DS2102SY20 Datasheet (DYNEX)

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Page 1
DS2102SY
DS2102SY
Rectifier Diode
Replaces September 2001 version, DS4171-5.0 DS4171-5.1 December 2001
FEATURES
■ Double Side Cooling
■ High Surge Capability
APPLICATIONS
■ Rectification
■ DC Motor Control
■ Power Supplies
■ Welding
■ Battery Chargers
VOLTAGE RATINGS
Type Number Repetitive Peak
Reverse Voltage
V
RRM
V
DS2102SY20 DS2102SY19 DS2102SY18 DS2102SY17 DS2102SY16 DS2102SY15
Lower voltage grades available.
2000 1900 1800 1700 1600 1500
Conditions
V
= V
RSM
RRM
+ 100V
KEY PARAMETERS V
2000V
RRM
I
6654A
F(AV)
I
100000A
FSM
Outline type code: F
See Package Details for further information.
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the Voltage Ratings selection table, e.g.:
DS2102SY18
Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order.
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Page 2
DS2102SY
CURRENT RATINGS
T
= 75oC unless otherwise stated
case
Symbol Parameter Conditions
Double Side Cooled
I
F(AV)
I
F(RMS)
I
Mean forward current
RMS value
F
Continuous (direct) forward current
Half wave resistive load 6654 A
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
T
= 100oC unless otherwise stated
case
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load 4227 A
Symbol Parameter Conditions
Double Side Cooled
I
F(AV)
Mean forward current
Half wave resistive load, T
UnitsMax.
- 10452 A
- 9275 A
- 6640 A
- 5403 A
UnitsMax.
= 100oC 5460 A
case
I
F(RMS)
I
F
RMS value
Continuous (direct) forward current
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
T
= 100oC 8575 A
case
T
= 100oC 7450 A
case
Half wave resistive load, T
= 100oC 5356 A
T
case
T
= 100oC 4260 A
case
= 100oC 3410 A
case
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Page 3
SURGE RATINGS
DS2102SY
Symbol
I
FSM
2
tI
I
I
FSM
I2t
Surge (non-repetitive) forward current
2
t for fusing
Surge (non-repetitive) forward current
2
I
t for fusing A2s
Parameter
THERMAL AND MECHANICAL DATA
Symbol
R
th(j-c)
R
th(c-h)
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Parameter
Conditions
10ms half sine; T
VR = 50% V
10ms half sine; T
VR = 0
Conditions Min. Max. Units
Double side cooled
Single side cooled
Clamping force 43.0kN with mounting compound
case
- 1/4 sine
RRM
case
= 175oC
=175oC
dc
Cathode dc Double side
Single side
Max. Units
80.0 kA
32 x 10
100.0 kA
50 x 10
- 0.0095
- 0.019
0.002
-
- 0.004
6
A2s
6
o
C/W
o
C/W- 0.019Anode dc
o
C/W
o
C/W
o
C/W
Forward (conducting) 200
T
vj
Virtual junction temperature
Reverse (blocking)
T
stg
-
Storage temperature range
Clamping force
-
-
175
-55 175
38.0 47.0 kN
o
C
o
C
o
C
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Page 4
DS2102SY
CHARACTERISTICS
Symbol
V
FM
I
RM
Q
S
I
rr
V
TO
r
T
CURVES
10000
Measured under pulse conditions
8000
- (A)
F
6000
Parameter
Forward voltage
Peak reverse current
Total stored charge
Peak reverse recovery current
Threshold voltage
Slope resistance 0.0415 mΩ
At V
, T
RRM
= 2000A, dIRR/dt = 3A/µs
I
F
T
= 175˚C, VR = 100V
case
= 175˚C - 0.75 V
At T
vj
At Tvj = 175˚C -
12000
10000
Conditions Min. Max. Units
= 25oC
case
= 175oC - 100 mA
case
- 1.0 VAt 3000A peak, T
-
- 120 A
8000
µC2600
4000
Instantaneous forward current, I
2000
0
0.4 0.6 0.8 1.0 Instantaneous forward voltage, V
Fig.2 Maximum (limit) forward characteristics
VFM Equation:­V
= A + Bln (IF) + C.IF+D.√I
FM
F
Tj = 175˚C
Tj = 25˚C
- (V)
F
6000
4000
Mean power dissipation - (W)
2000
1.2
0
0 2000 4000 6000 8000
Where A = 0.402091
these values are valid for T
Mean forward current, I
Fig.3 Dissipation curves
B = 0.011718 C = 6.48 x 10
–5
D = 0.005977
= 125˚C for IF 500A to 10000A
j
F(AV)
dc Half wave 3 phase 6 phase
10000
- (A)
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Page 5
DS2102SY
0.1 1.0 10 100 Rate of decay of forward current, dI
F
/dt - (A/µs)
1000
100
10
Reverse recovery current I
rr
- (A)
Conditions: T
j
= 175˚C
V
R
= 100V
I
F
= 2000A
100000
- (µC)
S
dIF/dt
I
F
Q
S
I
RM
10000
Stored charge, Q
1000
0.1 1.0 10 100 Rate of decay of forward current, dI
/dt - (A/µs)
F
Fig.4 Total stored charge Fig.5 Maximum reverse recovery current
Conditions:
= 175˚C
T
j
V
= 100V
R
I
= 2000A
F
160
140
120
100
80
Peak half sine forward current - (kA)
60
40
1 101 2351020 50
Fig.6 Surge (non-repetitive) forward current vs time
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I2t
ms Cycles at 50Hz
Duration
(with 50% V
RRM
at T
case
175˚C)
I2t = Î2 x t
2
35
30
I
2
t value - (A
25
2
s x 10
6
)
20
15
0.1
Anode side cooled
0.01 Double side cooled
0.001
Thermal impedance - (˚C/W)
Conduction
Halfwave
3 phase 120˚
6 phase 60˚
Effective thermal resistance
Junction to case ˚C/W
Double side
d.c.
0.0095
0.0105
0.0112
0.0139
Single side
0.0001
1010.10.010.001
Time - (s)
Fig.7 Maximum (limit) transient thermal impedance -
junction to case
0.019
0.020
0.0207
0.0234
100
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Page 6
DS2102SY
PACKAGE DETAILS
For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
Hole Ø3.6 x 2.0 deep (One in each electrode)
Cathode
Note:
1. Package maybe supplied with pins and/or tags.
Ø112.5 max
Ø73 nom
Ø73 nom
Nominal weight: 1600g
Clamping force: 50kN ±10%
Package outine type code: Y
Anode
37.7
36.0
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Page 7
DS2102SY
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer Services.
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HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639)
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
CUSTOMER SERVICE CENTRES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
SALES OFFICES
Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS4171-5 Issue No. 5.1 December 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
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