Page 1
© 2000 IXYS All rights reserved
1 - 2
V
RSM
V
(BR)min
ÿ
① V
RRM
Standard Avalanche
V V V Types Types
900 800 DS
9-08F
1300 1300 1200 DS 9-12F DSA 9-12F
1700 1750 1600 DSA 9-16F
1900 1950 1800 DSA 9-18F
① Only for Avalanche Diodes
Symbol Test Conditions Maximum Ratings
I
F(RMS)
TVJ= T
VJM
18 A
I
F(AVM)
T
case
= 150°C; 180° sine 11 A
P
RSM
DSA types, TVJ = T
VJM
, tp = 10 ms 4.5 kW
I
FSM
TVJ= 45°C; t = 10 ms (50 Hz), sine 250 A
VR= 0 t = 8.3 ms (60 Hz), sine 265 A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine 200 A
VR= 0 t = 8.3 ms (60 Hz), sine 220 A
I
2
t TVJ= 45°C t = 10 ms (50 Hz), sine 310 A2s
VR= 0 t = 8.3 ms (60 Hz), sine 295 A2s
TVJ= T
VJM
t = 10 ms (50 Hz), sine 200 A2s
VR= 0 t = 8.3 ms (60 Hz), sine 190 A2s
T
VJ
-40...+180 °C
T
VJM
180 °C
T
stg
-40...+180 °C
M
d
Mounting torque 2.2-2.8 Nm
19-25 lb.in.
Weight 5g
V
RRM
= 800-1800 V
I
F(RMS)
= 18 A
I
F(AV)M
= 11 A
Features
●
International standard package,
JEDEC DO-203 AA
●
Planar glassivated chips
Applications
●
Supplies for DC power equipment
●
DC supply for PWM inverter
●
Field supply for DC motors
●
Battery DC power supplies
Advantages
●
Space and weight savings
●
Simple mounting
●
Improved temperature and power
cycling
●
Reduced protection circuits
Symbol Test Conditions Characteristic Values
I
R
TVJ= T
VJM
; VR = V
RRM
£ 3mA
V
F
IF= 36 A; TVJ = 25°C £ 1.4 V
V
T0
For power-loss calculations only 0.85 V
r
T
TVJ= T
VJM
15 mW
R
thJC
DC current 2.0 K/W
180° sine 2.17 K/W
R
thJH
DC current 3.0 K/W
d
S
Creepage distance on surface 2.0 mm
d
A
Strike distance through air 2.0 mm
a Max. allowable acceleration 100 m/s
2
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
DS 9
DSA 9
Rectifier Diode
Avalanche Diode
A
C
DO-203 AA
A = Anode C = Cathode
C
A
M5
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© 2000 IXYS All rights reserved
2 - 2
10
-3
10
-2
10
-1
10
0
10
1
0
50
100
150
200
250
300
23456789110
200
400
600
800
100
1000
0.00.20.40.60.81.01.21.41.6
0
10
20
30
40
50
0 5 10 15 20
0
5
10
15
20
25
0 50 100 150 200
0
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
0
1
2
3
4
5
I2t
I
FSM
A
I
F
A
V
F
t
s
t
ms
P
F
W
I
F(AV)M
A
T
amb
°C
t
s
Z
thJH
K/W
A2s
0 50 100 150 200 250
0
5
10
15
20
25
I
F(AV)M
T
c
A
°C
V
DS 9
DSA 9
Fig. 6 Transient thermal impedance junction to heatsink
Fig. 1 Forward characteristics Fig. 2 Surge overload current
I
FSM
: crest value, t: duration
Fig. 3 I2t versus time (1-10 ms)
R
thJH
for various conduction angles d:
dR
thJH
(K/W)
DC 3.0
180° 3.35
120° 3.56
60° 4.0
30° 4.64
Constants for Z
thJH
calculation:
iR
thi
(K/W) ti (s)
1 0.095 0.00032
2 0.515 0.0102
3 1.39 0.360
4 1.0 2.30
Fig. 4 Power dissipation versus forward current and ambient temperature Fig. 5 Max. forward current at case
temperature
typ. lim.
TVJ= 180°C
TVJ= 25°C
50Hz, 80%V
RRM
T
VJ
= 45°C
T
VJ
= 180°C
VR = 0 V
TVJ=45°C
TVJ=180°C
DC
d = 180° sin
d = 120°
d = 60°
d = 30°
30°
60°
120°
180°
DC
R
thJA
:
8.3 K/W
13 K/W
(CU80x80)
18 K/W
DC
180° sin
120°
60°
30°
ase
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