Datasheet DS2012SF60, DS2012SF59, DS2012SF58, DS2012SF57, DS2012SF56 Datasheet (DYNEX)

DS2012SF

DS2012SF

Rectifier Diode

Replaces September 2001 version, DS4191-4.0 DS4548 -4.1 December 2001

FEATURES

■ Double Side Cooling

■ High Surge Capability

APPLICATIONS

■ Rectification

■ Freewheel Diode

■ DC Motor Control

■ Power Supplies

■ Welding

■ Battery Chargers

VOLTAGE RATINGS

Type Number Repetitive Peak

Reverse Voltage

V

RRM

V

DS2012SF60
DS2012SF59
DS2012SF58
DS2012SF57
DS2012SF56
DS2012SF55

Lower voltage grades available.

6000
5900
5800
5700
5600
5500

Conditions

= V

V

RSM

RRM

+ 100V

KEY PARAMETERS
V

6000V

RRM

I

1320A

F(AV)

I

16500A

FSM

Outline type code: F

See Package Details for further information.

Fig. 1 Package outline

ORDERING INFORMATION

When ordering, select the required part number shown in the
Voltage Ratings selection table, e.g.:

DS2012SF59

Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.

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DS2012SF

CURRENT RATINGS

T

= 75oC unless otherwise stated

case

Symbol Parameter Conditions

Double Side Cooled

I

F(AV)

I

F(RMS)

I

Mean forward current

RMS value

F

Continuous (direct) forward current

Half wave resistive load 1320 A

Single Side Cooled (Anode side)

I

F(AV)

I

F(RMS)

I

F

T

= 100oC unless otherwise stated

case

Mean forward current

RMS value

Continuous (direct) forward current

Half wave resistive load 947 A

Symbol Parameter Conditions

Double Side Cooled

I

F(AV)

Mean forward current

Half wave resistive load, T

UnitsMax.

- 2073 A

- 1897 A

- 1487 A

- 1283 A

UnitsMax.

= 100oC 1015 A

case

I

F(RMS)

I

F

RMS value

Continuous (direct) forward current

Single Side Cooled (Anode side)

I

F(AV)

I

F(RMS)

I

F

Mean forward current

RMS value

Continuous (direct) forward current

T

= 100oC 1594 A

case

T

= 100oC 1480 A

case

Half wave resistive load, T

= 100oC 1067 A

T

case

T

= 100oC 920 A

case

= 100oC 680 A

case

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SURGE RATINGS

DS2012SF

I

FSM

2

tI

I

I

FSM

I2t

Surge (non-repetitive) forward current

2

t for fusing

Surge (non-repetitive) forward current

2

I

t for fusing A2s

THERMAL AND MECHANICAL DATA

Symbol

R

th(j-c)

R

th(c-h)

Thermal resistance - junction to case

Thermal resistance - case to heatsink

Parameter

Conditions

10ms half sine; T

VR = 50% V

10ms half sine; T

VR = 0

Conditions Min. Max. Units

Double side cooled

Single side cooled

Clamping force 19.5kN
with mounting compound

case

- 1/4 sine

RRM

case

= 150oC

= 150oC

dc

Cathode dc
Double side

Single side

Max. UnitsSymbol Parameter

13.5 kA

6

0.92 x 10

A2s

16.5 kA

1.425 x 10

6

- 0.022oC/W

o

C/W- 0.038Anode dc

o

- 0.052

0.004

-

C/W

o

C/W

- 0.008oC/W

Forward (conducting) - 160

T

vj

T

stg

- kN22.018.0

Virtual junction temperature

Storage temperature range

Clamping force

-

150

–55 175

o

C

o

CReverse (blocking)

o

C

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DS2012SF

CHARACTERISTICS

Symbol

V

FM

I

RRM

Q

S

I

RR

V

TO

r

T

CURVES

5000

4000

3000

Parameter

Forward voltage

Peak reverse current

Total stored charge

Peak recovery current

Threshold voltage

Slope resistance 0.42 mΩ

Measured under pulse
conditions

Tj = 25˚C

At V

, T

RRM

I

= 2000A, dIRR/dt = 3A/µs,

F

T

= 150˚C, VR = 100V

case

= 150˚C - 1.0 V

At T

vj

At Tvj = 150˚C -

Conditions Min. Max. Units

= 25oC

case

= 150oC-75mA

case

- 2.1 VAt 3400A peak, T

-

- 120 A

3000

2000

µC4500

2000

Instantaneous forward current IF - (A)

1000

0

01.02.03.0
Instantaneous forward voltage, V

Fig.2 Maximum (limit) forward characteristics

VFM Equation:­V

= A + Bln (IF) + C.IF+D.√I

FM

Tj = 150˚C

Mean power dissipation - (W)

1000

dc
Half wave
3 phase
6 phase

0

0 500 1000 1500

- (V)

F

Mean forward current, I

Fig.3 Dissipation curves

Where A = 0.819645

B = –0.13673

F

C = 5.73 x 10
D = 0.042435

these values are valid for T

–5

= 125˚C for IF 500A to 5000A

j

F(AV)

- (A)

2000

4/7

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10000

0.1 1.0 10 100
Rate of decay of forward current, dI

F

/dt - (A/µs)

1000

100

10

Reverse recovery current, I

rr

- (A)

Conditions:
T

j

= 150˚C

V

R

= 100V

I

F

= 2000A

Conditions:

= 150˚C

T

j

= 100V

V

R

I

= 2000A

F

- (µC)

S

1000

Stored charge, Q

DS2012SF

I

F

Q

S

100

0.1 1.0 10 100

25

20

15

10

Peak half sine forward current - (kA)

5

0

1 101 2351020 50

Fig.6 Surge (non-repetitive) forward current vs time

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Rate of decay of forward current, dI

dIF/dt

/dt - (A/µs)

F

I

RM

Fig.4 Total stored charge Fig.5 Maximum reverse recovery current

I2t

ms Cycles at 50Hz

Duration

^

I2t = I2 x t

2

1.00

0.75

0.50

I

2

t value - (A

2

s x 10

6

)

0.1

0.01

Thermal Impedance - junction to case - (˚C/W)

Conduction

d.c.

Halfwave

3 phase 120˚

0.001

6 phase 60˚

0.001 0.01 0.1 1.0 10
Time - (s)

Fig.7 Maximum (limit) transient thermal impedance -

(with 50% V

RRM

at T

case

175˚C)

junction to case

Anode side cooled

Double side cooled

Effective thermal resistance

Junction to case ˚C/W

Double side

0.022

0.024

0.026

0.027

Single side

0.038

0.040

0.042

0.043

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DS2012SF

PACKAGE DETAILS

For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.

Hole Ø3.6x2.0 deep (in both electrodes)

Cathode

Note:

1. Package maybe supplied with pins and/or tags.

Ø76 max
Ø48 nom

Ø48 nom

Nominal weight: 450g

Clamping force: 19.6kN ± 10%

Package outline type code: F

Anode

27.0

25.4

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DS2012SF

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current
capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.

Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution
(PACs).

DEVICE CLAMPS

Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded
clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm

Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839

HEATSINKS

Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance
or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer
Services.

http://www.dynexsemi.com

e-mail: [email protected]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.

All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

CUSTOMER SERVICE CENTRES

Mainland Europe Tel: [phone]. Fax: [phone]
North America Tel: [phone]. Fax: [phone].
UK, Scandinavia & Rest Of World Tel: [phone]. Fax: [phone]

SALES OFFICES

Mainland Europe Tel: [phone]. Fax: [phone]
North America Tel: [phone]. Fax: [phone]. Toll Free: 1.888.33.DYNEX (39639) /

Tel: [phone]. Fax: [phone].
UK, Scandinavia & Rest Of World Tel: [phone]. Fax: [phone]

These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4191-4 Issue No. 4.1December 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

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