Page 1
TL/F/7515
DS1649/DS3649/DS1679/DS3679 Hex TRI-STATE TTL to MOS Drivers
March 1986
DS1649/DS3649/DS1679/DS3679 Hex TRI-STATEÉTTL
to MOS Drivers
General Description
The DS1649/DS3649 and DS1679/DS3679 are Hex
TRI-STATE MOS drivers with outputs designed to drive
large capacitive loads up to 500 pF associated with MOS
memory systems. PNP input transistors are employed to reduce input currents allowing the large fan-out to these drivers needed in memory systems. The circuit has Schottkyclamped transistor logic for minimum propagation delay,
and TRI-STATE outputs for bus operation.
The DS1649/DS3649 has a 15X resistor in series with the
outputs to dampen transients caused by the fast-switching
TRI-STATEÉis a registered trademark of National Semiconductor Corp.
output. The DS1679/DS3679 has a direct low impedance
output for use with or without an external resistor.
Features
Y
High speed capabilities
#
Typ 9 ns driving 50 pF
#
Typ 30 ns driving 500 pF
Y
TRI-STATE outputs for data bussing
Y
Built-in 15X damping resistor (DS1649/DS3649)
Y
Same pin-out as DM8096 and DM74366
Schematic Diagram
*DS1649/DS3649 only TL/F/7515– 1
Truth Table
Disable Input
Input Output
DIS 1 DIS 2
0001
0010
0 1 X Hi-Z
1 0 X Hi-Z
1 1 X Hi-Z
XeDon’t care
Hi-Z
e
TRI-STATE mode
Connection Diagram
Dual-In-Line Package
TL/F/7515– 2
Top View
Order Number DS1649J, DS3649J,
DS1679J, DS3679J, DS3649N or DS3679N
See NS Package Number J16A or N16A
Typical Application
TL/F/7515– 3
C
1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A.
Page 2
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Supply Voltage 7.0V
Logical ‘‘1’’ Input Voltage 7.0V
Logical ‘‘0’’ Input Voltage
b
1.5V
Storage Temperature Range
b
65§Ctoa150§C
Maximum Power Dissipation* at 25§C
Cavity Package 1371 mW
Molded Package 1280 mW
Lead Temperature (Soldering, 10 sec.) 300
§
C
Operating Conditions
Min Max Units
Supply Voltage (V
CC
4.5 5.5 V
Temperature (T
A
)
DS1649, DS1679
b
55
a
125
§
C
DS3649, DS3679 0
a
70
§
C
*Derate cavity package 9.1 mW/§C above 25§C; derate molded package
10.2 mW/
§
C above 25§C.
Electrical Characteristics (Note 2 and 3)
Symbol Parameter Conditions Min Typ Max Units
V
IN(1)
Logical ‘‘1’’ Input Voltage 2.0 V
V
IN(0)
Logical ‘‘0’’ Input Voltage 0.8 V
I
IN(1)
Logical ‘‘1’’ Input Current V
CC
e
5.5V, V
IN
e
5.5V 0.1 40 mA
I
IN(0)
Logical ‘‘0’’ Input Current V
CC
e
5.5V, V
IN
e
0.5V
b
50b250 mA
V
CLAMP
Input Clamp Voltage V
CC
e
4.5V, I
IN
eb
18 mA
b
0.75b1.2 V
V
OH
Logical ‘‘1’’ Output Voltage V
CC
e
4.5V, I
OH
eb
10 mA DS1649/DS1679 2.7 3.6 V
(No Load)
DS3649/DS3679 2.8 3.6
V
OL
Logical ‘‘0’’ Output Voltage V
CC
e
4.5V, I
OL
e
10 mA DS1649/DS1679 0.25 0.4 V
(No Load)
DS3649/DS3679 0.25 0.35 V
V
OH
Logical ‘‘1’’ Output Voltage V
CC
e
4.5V, I
OH
eb
1.0 mA DS1649 2.4 3.5 V
(With Load)
DS1679 2.5 3.5 V
DS3649 2.6 3.5 V
DS3679 2.7 3.5 V
V
OL
Logical ‘‘0’’ Output Voltage V
CC
e
4.5V, I
OL
e
20 mA DS1649 0.6 1.1 V
(With Load)
DS1679 0.4 0.5 V
DS3649 0.6 1.0 V
DS3679 0.4 0.5 V
I
1D
Logical ‘‘1’’ Drive Current V
CC
e
4.5V, V
OUT
e
0V (Note 4)
b
250 mA
I
0D
Logical ‘‘0’’ Drive Current V
CC
e
4.5V, V
OUT
e
4.5V (Note 4) 150 mA
Hi-Z TRI-STATE Output Current V
OUT
e
0.4V to 2.4V, DIS1 or DIS2e2.0V
b
40 40 mA
I
CC
Power Supply Current V
CC
e
5.5V One DIS Inpute3.0V
42 75 mA
All Other InputseX
All Inputse0V 11 20 mA
2
Page 3
Switching Characteristics (V
CC
e
5V, T
A
e
25§C) (Note 4)
Symbol Parameter Conditions Min Typ Max Units
t
S
g
Storage Delay Negative Edge (
Figure 1
)C
L
e
50 pF 4.5 7 ns
C
L
e
500 pF 7.5 12 ns
t
S
g
Storage Delay Positive Edge (
Figure 1
)C
L
e
50 pF 5 8 ns
C
L
e
500 pF 8 13 ns
t
F
Fall Time (
Figure 1
)C
L
e
50 pF 5 8 ns
C
L
e
500 pF 22 35 ns
t
R
Rise Time (
Figure 1
)C
L
e
50 pF 6 9 ns
C
L
e
500 pF 21 35 ns
t
ZL
Delay from Disable Input to Logical ‘‘0’’ C
L
e
50 pF
10 15 ns
Level (from High Impedance State) R
L
e
2kXto VCC(
Figure 2
)
t
ZH
Delay from Disable Input to Logical ‘‘1’’ C
L
e
50 pF
815ns
Level (from High Impedance State) R
L
e
2kXto GND (
Figure 2
)
t
LZ
Delay from Disable Input to High Impedance C
L
e
50 pF
15 25 ns
State (from Logical ‘‘0’’ Level) R
L
e
400X to VCC(
Figure 3
)
t
HZ
Delay from Disable Input to High Impedance C
L
e
50 pF
10 25 ns
State (from Logical ‘‘1’’ Level) R
L
e
400X to GND (
Figure 3
)
Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. Except for ‘‘Operating Temperature Range’’
they are not meant to imply that the devices should be operated at these limits. The table of ‘‘Electrical Characteristics’’ provides conditions for actual device
operation.
Note 2: Unless otherwise specified min/max limits apply across the
b
55§Ctoa125§C temperature range for the DS1649 and DS1679 and across the 0§Cto
a
70§C range for the DS3649 and DS3679. All typical values are for T
A
e
25§C and V
CC
e
5V.
Note 3: All currents into device pins shown as positive, out of device pins as negative, all voltages referenced to ground unless otherwise noted. All values shown
as max or min on absolute value basis.
Note 4: When measuring output drive current and switching response for the DS1679 and DS3679 a 15 X resistor should be placed in series with each output. This
resistor is internal to the DS1649/DS3649 and need not be added.
AC Test Circuits and Switching Time Waveforms
t
S
g
,t
S
’
,tR,t
F
TL/F/7515– 4
TL/F/7515– 5
FIGURE 1
3
Page 4
AC Test Circuits and Switching Time Waveforms (Continued)
t
ZH
TL/F/7515– 6
t
ZL
TL/F/7515– 7
TL/F/7515– 8
FIGURE 2
t
HZ
TL/F/7515– 9
t
LZ
TL/F/7515– 10
TL/F/7515– 11
FIGURE 3
*Internal on DS1649 and DS3649
Note 1: The pulse generator has the following characteristics: Z
OUT
e
50X and PRRs1 MHz. Rise and fall times between 10% and 90% pointss5 ns.
Note 2: C
L
includes probe and jig capacitance.
4
Page 5
Physical Dimensions inches (millimeters)
Ceramic Dual-In-Line Package (J)
Order Number DS1649J, DS3649J,
DS1679J or DS3679J
NS Package Number J16A
5
Page 6
DS1649/DS3649/DS1679/DS3679 Hex TRI-STATE TTL to MOS Drivers
Physical Dimensions inches (millimeters) (Continued)
Molded Dual-In-Line Package (N)
Order Number DS3649N or DS3679N
NS Package Number N16A
LIFE SUPPORT POLICY
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant support device or system whose failure to perform can
into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life
failure to perform, when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can effectiveness.
be reasonably expected to result in a significant injury
to the user.
National Semiconductor National Semiconductor National Semiconductor National Semiconductor
Corporation Europe Hong Kong Ltd. Japan Ltd.
1111 West Bardin Road Fax: (
a
49) 0-180-530 85 86 13th Floor, Straight Block, Tel: 81-043-299-2309
Arlington, TX 76017 Email: cnjwge@tevm2.nsc.com Ocean Centre, 5 Canton Rd. Fax: 81-043-299-2408
Tel: 1(800) 272-9959 Deutsch Tel: (
a
49) 0-180-530 85 85 Tsimshatsui, Kowloon
Fax: 1(800) 737-7018 English Tel: (
a
49) 0-180-532 78 32 Hong Kong
Fran3ais Tel: (
a
49) 0-180-532 93 58 Tel: (852) 2737-1600
Italiano Tel: (
a
49) 0-180-534 16 80 Fax: (852) 2736-9960
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.
Loading...