Datasheet DS1238AS-5, DS1238AS-10, DS1238A-5, DS1238A-10N, DS1238A-10 Datasheet (Dallas Semiconductor)

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FEATURES
Holds microprocessor in check during power
transients
Halts and restarts an out-of-control
microprocessor
Warns microprocessor of an impending power
failure
memory
Unconditionally write protects memory when
power supply is out of tolerance
Delays write protection until completion of
the current memory cycle
Consumes less than 200 nA of battery currentControls external power switch for high
current applications
Debounces pushbutton resetAccurate 10% power supply monitoringOptional 5% power supply monitoring
designated DS1238A-5
Provides orderly shutdown in microprocessor
applications
Pin-for-pin compatible with MAX691Standard 16-pin DIP or space-saving 16-pin
SOIC
Optional industrial temperature range -40°C
to +85°C
PIN ASSIGNMENT
PIN DESCRIPTION
V
BAT
- +3-Volt Battery Input
V
CCO
- Switched SRAM Supply Output VCC - +5-Volt Power Supply Input GND - Ground PF - Power-Fail
RVT - Reset Voltage Threshold
OSCIN - Oscillator In OSCSEL - Oscillator Select IN - Early Warning Input
NMI - Non-Maskable Interrupt ST - Strobe Input
CEO - Chip Enable Output CEI - Chip Enable Input WDS - Watchdog Status RST - Reset Output (active low)
RST - Reset Output (active high)
DESCRIPTION
The DS1238A MicroManager provides all the necessary functions for power supply monitoring, reset control, and memory backup in microprocessor-based systems. A precise internal voltage reference and comparator circuit monitor power supply status. When an out-of-tolerance condition occurs, the microprocessor reset and power-fail outputs are forced active, and static RAM control unconditionally write protects external memory. The DS1238A also provides early warning detection of a user-defined threshold by driving a non-maskable interrupt. External reset control is provided by a pushbutton reset
DS1238
A
MicroManage
r
www.dalsemi.com
16-Pin SOIC (300-mil)
See Mech. Drawings Section
VBAT
VCCO
VCC
RST RST WDS
1 2 3
16 15 14
GND CEI413
PF
RVT
OSCIN
CEO ST NMI
5 6 7
12 11 10
OSCSEL IN89
16-Pin DIP (300-mil)
See Mech. Drawings Section
VBAT
VCCO
VCC
RST RST WDS
1 2 3
16 15 14
GND CEI413
PF
RVT
OSCIN
CEO ST NMI
5 6 7
12 11 10
OSCSEL IN89
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debounce circuit connected to the RST pin. An internal watchdog timer can also force the reset outputs to the active state if the strobe input is not driven low prior to watchdog timeout. Oscillator control pins OSCSEL and OSCIN provide either external or internal clock timing for both the reset pulse width and
the watchdog timeout period. The Watchdog Status and Reset Voltage Threshold are provided via WDS and RVT , respectively. A block diagram of the DS1238A is shown in NO TAG.
PIN DESCRIPTION
PIN NAME DESCRIPTION
V
BAT
+3V battery input provides nonvolatile operation of control functions.
V
CCO
VCC output for nonvolatile SRAM applications.
V
CC
+5V primary power input.
PF Power-fail indicator, active high, used for external power switching as shown in NO
TAG.
RVT
Reset Voltage Threshold. Indicates that VCC is below the reset voltage threshold.
OSCIN Oscillator input or timing capacitor. See NO TAG. OSCSEL Oscillator Select. Selects internal or external clock functions. See NO TAG. IN Early warning power-fail input. This voltage sense point can be tied (via resistor
divider) to a user-selected voltage.
NMI
Non-maskable interrupt. Used in conjunction with the IN pin to indicate an impending power failure.
ST
Strobe input. A high-to-low transition will reset the watchdog timer, indicating that software is still in control.
CEO
Chip enable output. Used with nonvolatile SRAM applications.
CEI
Chip enable input.
WDS
Watchdog Status. Indicates that a watchdog timeout has occurred.
RST
Active low reset output.
RST Active high reset output.
POWER MONITOR
The DS1238A employs a bandgap voltage reference and a precision comparator to monitor the 5-volt supply (VCC) in microprocessor-based systems. When an out-of-tolerance condition occurs, the RVT , RST, and RST outputs are driven to the active state. The VCC trip point (V
CCTP
) is set for 10% operation
so that the RVT , RST and RST outputs will become active as VCC falls below 4.5 volts (4.37 typical). The V
CCTP
for the 5% operation option (DS1238A-5) is set for 4.75 volts (4.62 typical). The RST and
RST signals are excellent for microprocessor reset control, as processing is stopped at the last possible
moment of in-tolerance VCC. On power-up, RVT will become inactive as soon as VCC rises above V
CCTP
.
However, the RST and RST signals remain active for a minimum of 50 ms (100 ms typical) after V
CCTP
is
reached to allow the power supply and microprocessor to stabilize.
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DS1238A FUNCTIONAL BLOCK DIAGRAM Figure 1
WATCHDOG TIMER
The DS1238A provides a watchdog timer function which forces the WDS , RST, and RST signals to the active state when the strobe input (ST) is not stimulated for a predetermined time period. This time period is described below in NO TAG. The watchdog timeout period begins as soon as RST and
RST are
inactive. If a high-to-low transiti on occurs at the ST input prior to timeout, the watchdog timer is reset and begins to timeout again. The ST input timing is shown in NO TAG. In order to guarantee that the watchdog timer does not timeout, a high-to-low transition on ST must occur at or less than the minimum
timeout of the watchdog as described in the AC Electrical Characteristics. If the watchdog timer is allowed to time out, the WDS , RST, and RST outputs are dri ven to the active state. WDS is a latched
signal which indicates the watchdog status, and is activated as soon as the watchdog timer completes a
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full period as outlined in NO TAG. The WDS pin will remain low until one of three operations occurs. The first is to strobe the ST pin with a falling edge, which will both set the WDS as well as the watchdog timer count. The second is to leave the ST pin open, which disables the watchdog. Lastly, the WDS pin is active low whenever VCC falls below V
CCTP
and activates the RVT signal. The ST input can be derived from microprocessor address, data, or control signals, as well as microcontroller port pins. Under normal operating conditions, these signals would routinely reset the watchdog timer prior to timeout. The
watchdog is disabled by leaving the
ST input open, or as soon as V
CC
falls to V
CCTP
.
NON-MASKABLE INTERRUPT
The DS1238A generates a non-maskable interrupt ( NMI ) for early warning of a power failure to the microprocessor. A precision comparator monitors the voltage level at the IN pin relative to an on-chip reference generated by an internal band gap. The IN pin is a high-impedance input allowing for a user­defined sense point. An external resistor voltage divider network (NO TAG) is used to interface with high voltage signals. This sense point may be derived from the regulated 5-volt supply, or from a higher DC voltage level closer to the main system power input. Since the IN trip point VTP is 1.27 volts, the proper values for R1 and R2 can be determined by the equation as shown in NO TAG. Proper operation of the DS1238A requires that the voltage at the IN pin be limited to V
IH
. Therefore, the maximum allowable
voltage at the supply being monitored (V
MAX
) can also be derived as shown in NO TAG. A simple approach to solving this equation is to select a value for R2 of high enough value to keep power consumption low, and solve for R1. The flexibility of the IN input pin allows for detection of power loss at the earliest point in a power supply system, maximizing the amount of time for microprocessor
shutdown between NMI and RST or RST . When the supply being monitored decays to the voltage sense point, the DS1238A will force the NMI
output to an active state. Noise is removed from the NMI power-fail detection circuitry using built-in time domain hysteresis. That is, the monitored supply is sampled periodically at a rate determined by an internal ring oscillator running at approximately 30 kHz (33 µs/cycle). Three consecutive samplings of
out-of-tolerance supply (below V
SENSE
) must occur at the IN pin to active NMI . Therefore, the suppl y
must be below the voltage sense point for approximately 100 µs or the comparator will reset. In this way, power supply noise is removed from the monitoring function preventing false trips. During a power-up,
any IN pin levels below VTP detected by the comparator are di sabled from reaching the NMI pin until V
CC
rises to V
CCTP
. As a result, any potential active NMI will not be initiated until VCC reaches V
CCTP
.
Removal of an active low level on the NMI pin is controlled by the subsequent rise of the IN pin above VTP. The initiation and removal of the NMI signal during power up depends on the relative voltage
relationship between V
CC
and the IN pin voltage. Note that a fast-slewing power supply may cause the
NMI to be virtually nonexistent on power-up. This is of no consequence, however, since an RST will be
active. The NMI voltage will follow VCC down until VCC decays to V
BAT
. Once VCC decays to VBAT , the
NMI pin will enter a tri-state mode.
ST INPUT TIMING Figure 2
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OSCILLATOR CONTROLS Table 1
Watchdog Timeout Period (typ)
OSCIN OSCSEL
First Period
Following a Reset
Other Timeout
Reset Active
Duration
Ext Clk Low 20480 Clks 5120 Clocks 641 Clks
Ext Cap Low
pf 47
sec2.2
X Cpf
pf 47
ms550
X Cpf
pf 47
ms 69
X Cpf
Low Hi/Open 2.7 sec 170 ms 85 ms
External
Internal
Hi/Open Hi/Open 2.7 sec 2.7 sec 85 ms
Note that the OSCIN and OSCSEL pins are tri-stated when VCC is below V
BAT
.
POWER MONITOR, WATCHDOG TIMER, AND PUSHBUTTON RESET Figure 3
PUSHBUTTON RESET TIMING Figure 4
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NON-MASKABLE INTERRUPT Figure 5
V
SENSE
=
R2
R2 R1+
x 1.27
MAXVOLTAGE =
1.27
V
SENSE
x 5.0 = VMAX
Example 1: 5-Volt Supply, R2 = 10k Ohms, V
SENSE
= 4.8 Volts
4.8 =
10k
10k R1+
x 1.27 R1 = 27.8k Ohm
Example 2: 12-Volt Supply, R2 = 10k Ohms, V
SENSE
= 9.0 Volts
9.0 = 10k
10k R1+
x 1.27 R1 = 60.9k Ohm
V
MAX
=
1.27
9.00
x 5.0 = 35.4 Volts
NMI FROM IN INPUT Figure 6
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MEMORY BACKUP
The DS1238A provides all of the necessary functions required to battery back a static RAM. First, an internal switch is provided to supply SRAM power from the primary 5-volt supply (V
CC
) or from an
external battery (V
BAT
), whichever is greater. Second, the same power-fail detection described in the
power monitor section is used to hold the chip enable output (
CEO ) to within 0.3 volts of V
CC
or to within
0.7 volts of V
BAT
. The output voltage diode drop from V
BAT
(0.7V) is necessary to prevent charging of the
battery in violation of UL standards. Write protection occurs as V
CC
falls below V
CCTP
as specified. If
CEI is low at the time power-fail detection occurs, CEO is held in its present state until CEI is returned
high, or the period t
CE
expires. This delay of write protection until the current memory cycle is completed
prevents the corruption of data. If
CEO is in an inactive state at the time of V
CC
fail detection, CEO will
be unconditionally disabled within t
CF
. During nominal supply conditions CEO will follow CEI with a
maximum propagation delay of 20 ns. NO TAG shows a typical nonvolatile SRAM application.
FRESHNESS SEAL
In order to conserve battery capacity during initial construction of an end system, the DS1238A provides a freshness seal that electrically disconnects the battery. This means that upon battery attachment, the V
CCO
output will remain inactive until VCC is applied. This prevents V
CCO
from powering other devices
when the battery is first attached, and V
CC
is not present. Once VCC is applied, the freshness seal is broken
and cannot be invoked again without subsequent removal and reattachment of the battery.
POWER SWITCHING
When larger operating currents are required in a battery-backed system, the internal switching devices of the DS1238A may be too small to support the required load through V
CCO
with a reasonable voltage drop. For these applications, the PF output is provided to gate external power switching devices. As shown in Figure 8, power to the load is switched from V
CC
to battery on power-down, and from battery to VCC on
power-up. The DS1336 is designed to use the PF output to switch betw een V
BAT
and VCC. It provides better leakage and switchover performance than currently available discrete components. The transition threshold for PF is set to the external battery voltage V
BAT
, allowing a smooth transition between sources. Any load applied to the PF pin by an external switch will be supplied by the battery. Therefore, if a discrete switch is used, this load should be taken into consideration when sizing the battery.
NONVOLATILE SRAM Figure 7
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POWER SWITCHING Figure 8
Note: If freshness on the DS1238A is not used, PF on the DS1336 may be tied to OUT1. This will free IN4, OUT4, and V
BAT01
for system use.
TIMING DIAGRAMS
This section provides a description of the timing diagrams shown in Figure 9 and Figure 10. Figure 9 illustrates the relationship for power down. As V
CC
falls, the IN pin voltage drops below VTP. As a result,
the processor is notified of an impending power failure via an active
NMI . This gives the processor time
to save critical data in nonvolatile SRAM. As the power falls further, V
CC
crosses V
CCTP
, the power
monitor trip point. When V
CC
reaches V
CCTP
, and active RST and RST are given. At this time, CEO is
brought high to write-protect the RAM. When the V
CC
reaches V
BAT
, a power-fail is issued via the PF
pin.
Figure 10 shows the power-up sequence. As V
CC
slews above V
BAT
, the PF pin is deactivated. An active
reset occurs as well as an
NMI . Although the NMI may be short due to slew rates, reset will be
maintained for the standard t
RPU
timeout period . At a later time, if the IN pin falls below VTP, a new NMI
will occur. If the processor does not issue an ST , a watchdog reset will also occur. The s econd NMI and RST are provided to illustrate these possibilities.
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POWER-DOWN TIMING Figure 9
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POWER-UP TIMING Figure 10
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ABSOLUTE MAXIMUM RATINGS*
Voltage on VCC Pin Relative to Ground -0.5V to +7.0V Voltage on I/O Relative to Ground -0.5V to V
CC
+ 0.5V Operating Temperature 0°C to 70°C Operating Temperature (Industrial Version) -40°C to +85°C Storage Temperature -55°C to +125°C Soldering Temperature 260°C for 10 seconds
*
This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS (0°C to 70°C)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Supply Voltage V
CC
4.5 5.0 5.5 V 1
Supply Voltage (5% Option) V
CC
4.75 5.0 5.5 V 1
Input High Level V
IH
2.0 VCC+0.3 V 1
Input Low Level V
IL
-0.3 +0.8 V 1
IN Input Pin V
IN
0V
CC
V1
Battery Input V
BAT
04.0V1
DC ELECTRICAL CHARACTERISTICS (0°C to 70°C; VDD= 5V ± 10%)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Supply Current I
CC
4mA2
Battery Current I
BAT
0 200 nA 2, 12
Supply Output Current (V
CCO
= VCC - 0.3V)
I
CC01
100 mA 3
Supply Out Current (VCC < V
BAT
)I
CC02
1mA4
Supply Output Voltage V
CCO
VCC-0.3 V 1
Battery Back Voltage V
CCO
V
BAT
-0.8 V 6
Low Level @ RST V
OL
0.4 V 1
Output Voltage @ -500 µA
V
OH
VCC-0.5V VCC-0.1V V 1
CEO and PF Output
V
OHL
V
BAT
-0.8 V 6
Input Leakage Current I
LI
-1.0 +1.0
µA
2
Output Leakage Current I
LO
-1.0 +1.0
µA
11
Output Current @ 0.4V I
OL
4.0 mA 9
Output Current @ 2.4V I
OH
-1.0 mA 10
Power Sup. Trip Point V
CCTP
4.25 4.37 4.50 V 1
Power Supply Trip (5% Option) V
CCTP
4.50 4.62 4.75 V
IN Input Pin Current I
CCIN
-1.0 +1.0
µA
IN Input Trip Point V
TP
1.15 1.27 1.35 V 1
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AC ELECTRICAL CHARACTERISTICS (0°C to 70°C; VCC= 5V ± 10%)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
VCC Fail Detect to RST, RST
t
RPD
40 100 175
µs
VTP to NMI
t
IPD
40 100 175
µs
RESET Active OSCSEL=high t
RST
40 85 150 ms
ST Pulse Width
t
ST
20 ns 13
PBRST @ V
IL
t
PB
30 ms
VCC Slew Rate 4.75 to 4.25 t
F
300
µs
Chip Enable Prop Delay t
PD
20 ns
VCC Fail to Chip Enable High t
CF
7 12 144
µs
11
VCC Valid to RST (RC=1) t
FPU
100 ns
VCC Valid to RST t
RPU
40 100 150 ms 5
VCC Slew to 4.25 to V
BAT
t
FB1
10
µs
Chip Enable Output Recovery Time
t
REC
0.1
µs
7
VCC Slew 4.25 to 4.75 t
R
0
µs
Chip Enable Pulse Width t
CE
5
µs
8
Watchdog Time Delay Int Clock Long period
t
TD
1.7 2.7 s
Short period 110 170 ms Watchdog Time Delay, Ext
Clock, after Reset
t
TD
20480 clocks
Normal 5120 clocks V
BAT
Detect to PF t
PPF
2
µs
OSC IN Frequency f
OSC
0 250 kHz
CAPACITANCE (tA=25°C)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Input Capacitance C
IN
5pF
Output Capacitance C
OUT
7pF
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NOTES:
1. All voltages referenced to ground.
2.
Measured with V
CCO
, CEO , PF, ST , RST, RST , and NMI pin open.
3.
I
CCO1
is the maximum average load which the DS1238A can supply at VCC-.3V through the V
CCO
pin
during normal 5-volt operation.
4.
I
CCO2
is the maximum average load which the DS1238A can supply through the V
CCO
pin during data retention battery supply operation, with a maximum drop of 0.8 volts for commercial, 1.0V for industrial.
5.
With t
R
= 5 µs.
6.
V
CCO
is approximately V
BAT
-0.5V at 1 µA load.
7.
t
REC
is the minimum time required before CEI /CEO memory access is allowed.
8.
t
CE
maximum must be met to insure data integrity on power loss.
9.
All outputs except RST which is 25 µA max.
10.
All outputs except RST , RTV , and NMI which is 25 µA min.
11.
The ST pin will sink ±50 µA in normal operation. The OSCIN pin will sink ±5 µA in normal
operation. The OSCSEL pin will sink ±10 µA in normal operation.
12.
I
BAT
is measured with V
BAT
=3.0V.
13.
ST should be active low before the watchdog is disabled (i.e., before the ST input is tristated).
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