Datasheet DS1100Z-75, DS1100Z-60, DS1100Z-500, DS1100Z-50, DS1100Z-45 Datasheet (Dallas Semiconductor)

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µ

DS1100

5-Tap Economy Timing

Element (Delay Line)

FEATURES

§ All-Silicon Timing Circuit

§ Five Taps Equally Spaced

§ 5V Operation

§ Delays are Stable and Precise

§ Both Leading- and Trailing-Edge Accuracy

§ Improved Replacement for DS1000

§ Low-Power CMOS

§ TTL/CMOS-Compatible

§ Vapor-Phase, IR, and Wave Solderable

§ Custom Delays Available

§ Fast-Turn Prototypes

§ Delays Specified Over Both Commercial and

Industrial Temperature Ranges

PIN ASSIGNMENT

IN

TAP 2

TAP 4

GND

1

2

3

4

DS1100M DIP (300mil)

DS1100Z SO (150mil)

DS1100U

8

7

6

5

SOP

V

CC

TAP 1

TAP 3

TAP 5

PIN DESCRIPTION

TAP 1 to TAP 5 - TAP Output Number
V

CC

GND - Ground
IN - Input

- +5V

DESCRIPTION

The DS1100 series delay lines have five equally spaced taps providing delays from 4ns to 500ns. These
devices are offered in 8-pin DIPs and surface-mount packages to save PC board area. Low cost and
superior reliability over hybrid technology is achieved by the combination of a 100% silicon delay line
and industry-standard DIP and SO packaging. The DS1100 5-tap silicon delay line reproduces the input­logic state at the output after a fixed delay as specified by the extension of the part number after the dash.
The DS1100 is designed to reproduce both leading and trailing edges with equal precision. Each tap is
capable of driving up to ten 74LS loads.

Dallas Semiconductor can customize standard products to meet special needs.

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Figure 1. LOGIC DIAGRAM

Table 1. DS1100 PART NUMBER DELAY TABLE (All Values in ns)

PART

DS1100-XXX

-20 4 8 12 16 20

-25 5 10 15 20 25

-30 6 12 18 24 30

-35 7 14 21 28 35

-40 8 16 24 32 40

-45 9 18 27 36 45

-501020304050

-601224364860

-751530456075

-100 20 40 60 80 100

-125 25 50 75 100 125

-150 30 60 90 120 150

-175 35 70 105 140 175

-200 40 80 120 160 200

-250 50 100 150 200 250

-300 60 120 180 240 300

-500 100 200 300 400 500

TAP 1 TAP 2 TAP 3 TAP 4 TAP 5

NOMINAL DELAYS

DS1100

Figure 2. TIMING DIAGRAM: SILICON DELAY LINE

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DS1100

ABSOLUTE MAXIMUM RATINGS*

Voltage on Any Pin Relative to Ground -0.5V to +6.0V
Operating Temperature Range -40°C to +85°C
Storage Temperature Range -55°C to +125°C
Soldering Temperature See IPC/JEDEC J-STD-020A Specification
Short-Circuit Output Current 50mA for 1s

*This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operation sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of time may affect reliability.

DC ELECTRICAL CHARACTERISTICS (VCC = 5.0V ±5%, TA = -40°C to +85°C.)

PARAMETER SYM TEST CONDITION MIN TYP MAX UNITS NOTES

Supply Voltage V
High-Level
Input Voltage
Low-Level
Input Voltage
Input-Leakage
Current
Active Current I
High-Level
Output Current
Low-Level
Output Current

V

V

CC

IH

IL

I

CC

I

OH

I

OL

0.0V £ VI £ V

I

V

V

V

CC

= Max; Freq = 1MHz 30 50 mA 6, 8

CC

= Min; V

CC

= Min; V

CC

= 4 -1 mA

OH

= 0.5 12 mA

OL

4.75 5.00 5.25 V 5

2.2

VCC +

0.3

V5

-0.3 0.8 V 5

-1.0 1.0 µA

AC ELECTRICAL CHARACTERISTICS (VCC = 5.0V ±5%, TA = -40°C to +85°C.)

PARAMETER SYM TEST CONDITION MIN TYP MAX UNITS NOTES

Input
Pulse Width

Input-to-Tap
Delay Tolerance
(Delays £ 40ns)

Input-to-Tap
Delay Tolerance
(Delays > 40ns)
Power-Up Time t

t

t

PLH,

t

PHL

t

PLH,

t

PHL

WI

+25°C 5V -2 Table 1 +2 ns 1, 3, 4, 7
0°C to +70°C -3 Table 1 +3 ns 1, 2, 3, 4, 7

-40°C to +85°C -4 Table 1 +4 ns 1, 2, 3, 4, 7
+25°C 5V -5 Table 1 +5 % 1, 3, 4, 7
0°C to +70°C -8 Table 1 +8 % 1, 2, 3, 4, 7

-40°C to +85°C -13 Table 1 +13 % 1, 2, 3, 4, 7

PU

20% of

Tap 5

t

PLH

ns 9

200 µs

Input Period Period 2(tWI)ns9

CAPACITANCE (TA = +25°C)

PARAMETER SYMBOL MIN TYP MAX UNITS NOTES

Input Capacitance C

IN

510 pF

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DS1100

NOTES:

1) Initial tolerances are ± with respect to the nominal value at +25°C and 5V for both leading and

trailing edge.

2) Temperature and voltage tolerance is with respect to the nominal delay value over the stated

temperature range, and a supply-voltage range of 4.75V to 5.25V.

3) All tap delays tend to vary unidirectionally with temperature or voltage changes. For example, if

TAP1 slows down, all other taps also slow down; TAP3 can never be faster than TAP2.

4) Intermediate delay values are available on a custom basis. For further information, call

[phone].

5) All voltages are referenced to ground.

6) Measured with outputs open.

7) See Test Conditions section at the end of this data sheet.

8) Frequencies higher than 1MHz result in higher ICC values.

9) At or near maximum frequency the delay accuracy can vary and will be application sensitive (i.e.,

decoupling, layout).

Figure 3. TEST CIRCUIT

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DS1100

TERMINOLOGY

Period: The time elapsed between the leading edge of the first pulse and the leading edge of the
following pulse.

tWI (Pulse Width): The elapsed time on the pulse between the 1.5V point on the leading edge and the

1.5V point on the trailing edge, or the 1.5V point on the trailing edge and the 1.5V point on the leading
edge.

(Input Rise Time): The elapsed time between the 20% and the 80% point on the leading edge of the

t

RISE

input pulse.

t

(Input Fall Time): The elapsed time between the 80% and the 20% point on the trailing edge of the

FALL

input pulse.

t

(Time Delay, Rising): The elapsed time between the 1.5V point on the leading edge of the input

PLH

pulse and the 1.5V point on the leading edge of any tap output pulse.

t

(Time Delay, Falling): The elapsed time between the 1.5V point on the trailing edge of the input

PHL

pulse and the 1.5V point on the trailing edge of any tap output pulse.

TEST SETUP DESCRIPTION

Figure 3 illustrates the hardware configuration used for measuring the timing parameters on the DS1100.
The input waveform is produced by a precision-pulse generator under software control. Time delays are
measured by a time interval counter (20ps resolution) connected between the input and each tap. Each tap
is selected and connected to the counter by a VHF switch control unit. All measurements are fully
automated, with each instrument controlled by a central computer over an IEEE 488 bus.

TEST CONDITIONS INPUT :

Ambient Temperature: +25°C ±3°C
Supply Voltage (VCC): 5.0V ±0.1V
Input Pulse: High = 3.0V ±0.1V

Low = 0.0V ±0.1V
Source Impedance: 50W max
Rise and Fall Time: 3.0ns max (measured between 0.6V and 2.4V)
Pulse Width: 500ns (1µs for -500 version)
Period: 1µs (2µs for -500 version)

OUTPUT:

Each output is loaded with the equivalent of one 74F04 input gate. Delay is measured at the 1.5V level on
the rising and falling edge.

NOTE:

Above conditions are for test only and do not restrict the operation of the device under other data sheet
conditions.

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ORDERING INFORMATION

DS1100

DS1100

TOTAL TIME DELAY (ns): 20,
25, 30, 35, 40, 45, 50, 60, 75,
100, 125, 150, 175, 200, 250,
300, 500

PACKAGE TYPE:
M = DIP
Z = SO (150MIL)
U = µSOP

EXAMPLE: The DS1100Z-250 is a 250ns delay (input-to-tap 5) DS1100 in the SO package.

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