All-silicon time delay
10 taps equally spaced
Delays are stable and precise
Leading and trailing edge accuracy
Delay tolerance ±5% or ±2 ns, whichever is
greater
Economical
Auto-insertable, low profile
Standard 14-pin DIP or 16-pin SOIC
Low-power CMOS
TTL/CMOS-compatible
Vapor phase, IR and wave solderable
Custom delays available
Fast turn prototypes
PIN ASSIGNMENT
IN1
1
NC
2
TAP 2
TAP 4
TAP 6
TAP 8
GND
3
4
5
6
7
DS1010 14-Pin DIP (300-mil)
See Mech. Drawin
14
13
12
11
10
9
8
V
CC
TAP 1
TAP 3
TAP 5
TAP 7
TAP 9
TAP 10
s Sectio
IN1
NC
NC
TAP 2
TAP 4
TAP 6
TAP 8
GND
DS1010S 16-Pin SOIC
See Mech. Drawin
PIN DESCRIPTION
TAP 1 - TAP 10- TAP Output Number
V
CC
GND- Ground
NC- No Connection
IN- Input
- 5 Volts
1
16
2
15
14
3
4
13
5
12
11
7
10
8
(300-mil)
9
s Sectio
V
CC
N
TAP 1
TAP 3
TAP 5
TAP 7
TAP 9
TAP 10
DESCRIPTION
The DS1010 series delay line has ten equally spaced taps providing delays from 5 ns to 500 ns. The
devices are offered in a standard 14-pin DIP which is pin-compatible with hybrid delay lines.
Alternatively, a 16-pin SOIC is available for surface mount technology which reduces PC board area.
Since the DS1010 is an all-silicon solution, better economy is achieved when compared to older methods
using hybrid techniques. The DS1010 series delay lines provide a nominal accuracy of ±5% or ±2 ns,
whichever is greater. The DS1010 reproduces the input logic state at the TAP 10 output after a fixed
delay as specified by the dash number extension of the part number. The DS1010 is designed to produce
both leading and trailing edge with equal precision. Each tap is capable of driving up to 10 74LS type
loads. Dallas Semiconductor can customize standard products to meet special needs. For special requests
and rapid delivery, call (972) 371-4348.
Voltage on Any Pin Relative to Ground-1.0V to +7.0V
Operating Temperature0°C to 70°C
Storage Temperature-55°C to +125°C
Soldering Temperature260°C for 10 seconds
Short Circuit Output Current50 mA for 1 second
* This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operation sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of time may affect reliability.
DC ELECTRICAL CHARACTERISTICS(0°C to 70°C; VCC = 5.0V ± 5%)
PARAMETERSYMTEST
CONDITION
Supply VoltageV
High Level Input
V
CC
IH
Voltage
Low Level Input
V
IL
Voltage
Input Leakage
I
I
0.0V ≤ VI ≤ V
Current
Active CurrentI
CC
VCC=Max;
Period=Min.
High Level Output
Current
Low Level Output
Current
Input Pulse Widtht
Input to Tap Delay
(leading edge)
Input to Tap Delay
(trailing edge)
Power-up Timet
t
PLH
t
PHL
WI
PU
40% of TAP 10 t
PLH
ns8
Table 1ns3, 4, 5, 6,
Table 1ns3, 4, 5, 6,
100ms
7, 9
7, 9
Period4 (tWI)ns8
CAPACITANCE(TA = 25°C)
PARAMETERSYMBOLMINTYPMAXUNITSNOTES
Input CapacitanceC
IN
510pF
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Page 4
NOTES:
1. All voltages are referenced to ground.
2. Measured with outputs open.
DS1010
3. V
= 5V @ 25°C. Input-to-tap delays accurate on both rising and falling edges within ±2 ns or ±5%
CC
whichever is greater.
4. See “Test Conditions” section.
5. For DS1010 delay lines with a TAP 10 delay of 100 ns or greater, temperature variations from 25°C
to 0°C or 70°C may produce an additional input-to-tap delay shift of ±2ns or ±3%, whichever is
greater.
6. For DS1010 delay lines with a TAP 10 delay less than 100 ns, temperature variations from 25°C to
0°C or 70°C may produce an additional input-to-tap delay shift of ±1 ns or ±9%, whichever is greater.
7. All tap delays tend to vary unidirectionally with temperature or voltage changes. For example, if TAP
1 slows down, all other taps will also slow down; TAP 3 can never be faster than TAP 2.
8. Pulse width and period specifications may be exceeded; however, accuracy will be applicationsensitive (decoupling, layout, etc.).
9. Certain high-frequency applications not recommended for -50 in 16-pin package. Consult factory.
TIMING DIAGRAM: SILICON DELAY LINE Figure 2
4 of 6
Page 5
TEST CIRCUIT Figure 3
DS1010
TERMINOLOGY
Period: The time elapsed between the leading edge of the first pulse and the leading edge of the
following pulse.
tWI (Pulse Width): The elapsed time on the pulse between the 1.5V point on the leading edge and the
1.5V point on the trailing edge, or the 1.5V point on the trailing edge and the 1.5 V point on the leading
edge.
(Input Rise Time): The elapsed time between the 20% and the 80% point on the leading edge of the
t
RISE
input pulse.
t
(Input Fall Time): The elapsed time between the 80% and the 20% point on the trailing edge of the
FALL
input pulse.
(Time Delay Rising): The elapsed time between the 1.5V point on the leading edge of the input
t
PLH
pulse and the 1.5V point on the leading edge of any tap output pulse.
t
(Time Delay, Falling): The elapsed time between the 1.5V point on the trailing edge of the input
PHL
pulse and the 1.5V point on the trailing edge of any tap output pulse.
5 of 6
Page 6
DS1010
TEST SETUP DESCRIPTION
Figure 3 illustrates the hardware configuration used for measuring the timing parameters on the DS1010.
The input waveform is produced by a precision pulse generator under software control. Time delays are
measured by a time interval counter (20 ps resolution) connected between the input and each tap. Each
tap is selected and connected to the counter by a VHF switch control unit. All measurements are fully
automated, with each instrument controlled by a central computer over an IEEE 488 bus.