Datasheet DN8899SE, DN8899S, DN8899 Datasheet (Panasonic)

■ Overview

The DN8899/SE/TE/S is a combination of a Hall element, amplifier, Schmidt circuit, and stabilized power supply/temperature compensator integrated on an identical chip by using the IC technology. It amplifies Hall element output at the amplifier, converts into a digital signal through the Schmidt circuit, and drives the TTL or MOS IC directly.

■ Features

•

High sensitivity and low drift

•

Stable temperature characteristics due to the additional temperature compensator

•

Wide operating supply voltage range(V

CC

=4.5 to 16V)

•

Operating in alternative magnetic field

•

TTL and MOS ICs directly drivable by output

•

Semipermanent service life due to no contact parts

•

Small change of the operating flux density against mechanical stress

•

Output open collector

•

“0” gauss point in the zero cross type hysteresis width

■ Applications

•

Speed sensors

•

Position sensors

•

Rotation sensors

•

Keyboard switches

•

Microswitches

Note) This IC is not suitable for the car electric equipment.

DN8899/SE/TE/S

Hall IC

(

Operating Temperature Range

Topr

=

–40 to+ 100˚C,

Operating in Alternative Magnetic Field

)

1

Hall Element

· DN8899/SE/TE

Amp. Schmitt Trigger Output Stage

3

2

V

CC

Output

GND

Stabilized Power Supply Temperature Correction Circuit

■ Block Diagram

1

Hall Element

· DN8899S

Amp. Schmitt Trigger Output Stage

3

4

V

CC

Output

GND

2

NC or GND

Stabilized Power Supply Temperature Correction Circuit

DN8899

DN8899SE

+0.1

0.43

– 0.05

1 : V 2 : GND 3 : Output

Unit : mm

CC

Unit : mm

4.5±0.3

0.5±0.1

1.27

123

5˚

2˚

5˚

2˚

4.52±0.3

2.0±0.3

1.0

0.7

4.0±0.3

5˚

0.8±0.1

10.5±0.5

SSIP003-P-0000A (E-3S)

DN8899S

0.55±0.15

0.4±0.1

123

SSIP003-P-0000C (SE-3S)

4.0±0.3

(1.0)(1.0)

0.6±0.15

1.27 123

SSIP003-P-0000B (TE-3S)

1

2

0.6±0.2

(1.0) (1.0)

4.52±0.3

12.5±06.5

(0.72)

2 to 5˚

R0.25

10.0±0.6

(0.4)

(0.7)

(0.6)

3.3±0.3

4

1.6

3

1.27

2˚

0.5±0.1 1.2±0.1

2˚

1.54±0.1

1 : V 2 : GND 3 : Output

(0.2)

CC

Unit : mm

0.95±0.2

45˚

CC

Unit : mmDN8899TE

3.0±0.3

0.3 to 0.5

ESOP004-P-0200 (SOH-4D)

3.0±0.3

5.4±0.4

0.15

0.4±0.2

0 to 0.1

1 : V

CC

2 : NC or GND 3 : Output 4 : GND

1.5±0.3

V

CC

I

CC

I

O

P

D

T

opr

T

stg

Supply voltage Supply current Circuit current Power dissipation Operating ambient temperature Storage temperature

V mA mA

mW

˚C ˚C

Parameter Symbol Rating Unit

■ Absolute Maximum Ratings (Ta=25˚C)

18

8

20

150 –40 to +100 –55 to +125

Parameter Symbol Condition min typ max Unit

■ Electrical Characteristics (Ta=25˚C)

Operating flux density

–12B

1 (L→H)

mT

V

CC

=12V

B

2 (H→L)

12 mT6

V

CC

=12V

Hysteresis width

7BW mT10

VCC=12V

Low output voltage

V

OL

0.4 V

Supply current

mA

V

CC

=16V

I

CC

5.5 mA

V

CC

=4.5V

–66– 0.1

0.1

High output current

I

OH

10 µA

V

CC

=4.5 to 16V, IO=12mA,

B=12mT V

CC

=4.5 to 16V, VO=16V,

B=–12mT

1.5

1.0

1.3

1.0 1.75

1.0

Unit : mm The center of the Hall element is in the hatched area in the right figure.

· DN8899

1.0

1.25

1.0 1.63

· DN8899SE

1.0

1.15

1.0 1.5

· DN8899TE · DN8899S

DN8899

0.7

DN8899SE

0.42

DN8899TE

0.4

DN8899S

0.65

Distance from package surface to sensor (mm)

■ Hall Element Position

Marking surface

Applied flux direction

Flux density (B)

Output voltage (V

O

)

B

1

B

2

■ Flux-Voltage Conversion Characteristics

■ Supplementary Descriptions

1. Change of the operation magnetic flux density dose not depend on the supply voltage, because the stabilization power supply is built in. (only for the range ; VCC=4.5 to 16V)

2. Change from “H” to “L” level increases the supply current by approx. 1mA.

Ambient Temperature (˚C)

Supply Current (mA)

Supply Voltage – Ambient Temperature

8

7

6

5

4

3

2

1

0

–50 –25 0 25 50 75 100 125

VCC=4.5V

VCC=16V

Ambient Temperature (˚C)

Operating Flux Density (mT)

Operating Flux Density – Ambient Temperature

20

10

0

–10

–20

–50 –25 0 25 50

V

CC

=12V

75 100 125

Sample 2, B

H to L

Sample 3, B

H to L

Sample 1, B

H to L

Sample 3, B

L to H

Sample 1, B

L to H

Ambient Temperature (˚C)

Output “L” Level Voltage (mV)

Output Low Level Voltage – Ambient Temperature

100

90

80

70

60

50

40

30

20

10

0

–50 –25 0 25 50

V

CC

=12V

I

O

=12mA

75 100 125

Supply Voltage (V)

Operating Flux Density (mT)

Operating Flux Density – Supply Voltage

20

10

0

–10

–20

0 2 4 6 8 10 12 14 16 18 20

Ta=25˚C

B

H to L

B

L to H

Sample 2, B

L to H

■ Characteristics Curve