Page 1
N-Channel Depletion-Mode
TO-243AA
(SOT-89)
Vertical DMOS FETs
Ordering Information
BV
/R
DSX
BV
DGX
350V 10Ω 200mA DN3535N8 DN3535NW
Same as SOT-89. Products shipped on 2000 piece carrier tape reels.
*
** Die in wafer form.
DS(ON)
(max) (min) TO-243AA* Die**
I
DSS
Order Number / Package
DN3535
Product marking for TO-243AA:
DN5S*
Where *= 2-week alpha date code
Features
❏ High input impedance
❏ Low input capacitance
❏ Fast switching speeds
❏ Low on resistance
❏ Free from secondary breakdown
❏ Low input and output leakage
Applications
❏ Normally-on switches
❏ Solid state relays
❏ Converters
❏ Linear amplifiers
❏ Constant current sources
❏ Power supply circuits
❏ Telecom
Absolute Maximum Ratings
Drain-to-Source Voltage BV
Drain-to-Gate Voltage BV
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature 55°C to +150°C
Soldering Temperature* 300°C
*
Distance of 1.6 mm from case for 10 seconds.
DSX
DGX
Advanced DMOS Technology
These low threshold depletion-mode (normally-on) transistors
utilize an advanced vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of
bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal
runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Option
G
D
S
D
12/13/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
1
Page 2
Thermal Characteristics
DN3535
Package ID (continuous)* ID (pulsed) Power Dissipation
θθ
θ
θθ
jc
θθ
θ
θθ
ja
IDR*I
@ TA = 25°C °C/W °C/W
TO-243AA 230mA 500mA 1.6W
ID (continuous) is limited by max rated Tj.
*
†
Mounted on FR4 board, 25mm x 25mm x 1.57mm. Significant P
increase possible on ceramic substrate.
D
†
15 78
†
230mA 500mA
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol Parameter Min Typ Max Unit Conditions
BV
DSX
V
GS(OFF)
∆V
GS(OFF)
I
GSS
I
D(OFF)
I
DSS
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Drain-to-Souce Breakdown Voltage 350 V VGS = -5.0V, ID = 1.0µA
Gate-to-Source OFF Voltage -1.5 -3.5 V V
Change in V
with Temperature 4.5 mV/°CV
GS(OFF)
Gate Body Leakage Current 100 nA V
= 15V, ID = 10µA
DS
= 15V, ID = 10µA
DS
= ±20V, V
GS
DS
Drain-to-Source Leakage Current 1.0 µAVGS = -5.0V, VDS = Max Rating
1.0 mA V
Saturated Drain-to-Source Current 200 mA VGS = 0V, V
= -5.0V, V
GS
TA = 125°C
DS
= 15V
Static Drain-to-Source 10 Ω VGS = 0V, ID = 150mA
ON-State Resistance
Change in R
Forward Transconductance 200 mg ID = 100mA, VDS=10V
with Temperature 1.1 %/°CVGS = 0V, ID = 150mA
DS(ON)
Ω
Input Capacitance 360
Common Source Output Capacitance 40 pF VGS = -5.0V, VDS = 25V, f =1.0Mhz
Reverse Transfer Capacitance 10
Turn-ON Delay Time 15
VDD = 25V,
Rise Time 20 ID = 150mA,
Turn-OFF Delay Time 20 R
ns
GEN
= 25Ω,
Fall Time 30 VGS = 0V to -10V
Diode Forward Voltage Drop 1.8 V VGS = -5.0V, I
Reverse Recovery Time 800 ns VGS = -5.0V, I
SD
SD
DRM
= 0V
= 0.8 Max Rating
DS
= 150mA
= 150mA
Switching Waveforms and Test Circuit
INPUT
OUTPUT
0V
-10V
V
0V
10%
t
(ON)
t
d(ON)
DD
10%
90%
t
r
90%
t
d(OFF)
t
(OFF)
t
F
90%
10%
2
PULSE
GENERATOR
R
gen
INPUT
V
DD
R
L
OUTPUT
D.U.T.
Page 3
Typical Performance Curves
DN3535
1.0
0.8
0.6
(Amperes)
D
I
0.4
0.2
0.0
050100 150 200 250 300 350
1.0
0.8
Output Characteristics
V
(Volts)
DS
Tr ansconductance vs. Drain Current
V
= 10V
DS
TA = -55°C
VGS = +2.0V
0V
-0.5V
-0.8V
-1.0V
-1.5V
-2V
Saturation Characteristics
1.0
0.8
0.6
(Amperes)
D
I
0.4
0.2
0.0
0246810
V
(Volts)
DS
Power Dissipation vs. Case Temperature
2.0
TO-243AA
1.5
VGS = +2V
0V
-0.5V
-0.8V
-1V
-1.5V
-2V
0.6
(siemens)
FS
0.4
G
TA = 125°C
0.2
0.0
0.0 0.2 0.4 0.6 0.8
TA = 25°C
ID (Amperes)
Maximum Rated Safe Operating Area
10
TO-243AA (pulsed)
1.0
TO-243AA (DC)
0.1
(amperes)
D
I
0.01
TA=25°C
(Watts)
1.0
PD
0.5
0.0
0255075100 125 150
TC (°C)
Thermal Response Characteristics
1.0
TO-243AA
P
= 1.6W
D
= 25°C
T
C
Thermal Resistance (normalized)
0.8
0.6
0.4
0.2
0.001
1 100010010
V
DS
(Volts)
0
0.001 100.01 0.1 1.0
tp (seconds)
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Page 4
Typical Performance Curves
DN3535
BV
Variation with Temperature
DSV
1.2
ID = 1mA
VGS = -5V
1.1
(Normalized)
1.0
DSV
BV
0.9
0.8
-50 0 50 100 150
TJ (°C)
Tr ansfer Characteristics
1300
V
= 10V
1100
900
700
DS
(Milliamperes)
500
D
I
300
TA = -55°C
TA = 25°C
TA = 125°C
On Resistance vs. Drain Current
25
20
VGS = 0V
(ohms)
15
DS(ON)
10
R
5
0
0.0 0.2 0.4 0.6 0.8 1.0
ID (Amperes)
V
1.4
1.2
1.0
(normalized)
0.8
GS(OFF)
V
0.6
GS(OFF)
and R
V
GS(OFF)
DS(ON)
@ 10µA
R
w/ Temperature
DS(on)
@ 0V, 150mA
2.4
2.0
1.6
1.2
0.8
(normalized)
DS(ON)
R
100
0
-3 -2 -1 0 1 2
V
(Volts)
GS
Capacitance vs. Drain Source Voltage
350
V
= -5V
C
C
GS
ISS
OSS
300
250
200
(picofarads)
150
C
100
50
C
RSS
0
010203040
V
(volts)
DS
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
0.4
-50 -25 0 25 50 75 100 125 150
0.4
TJ (°C)
Gate Drive Dynamic Characteristics
3
ID = 150mA
2
1
0
(volts)
-1
GS
V
-2
-3
-4
-5
0 500 1000 1500 2000
VDS=40V
Q (picocoulombs)
G
12/13/010
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
4
www.supertex.com
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