Page 1
N-Channel Depletion-Mode
TO-243AA
(SOT-89)
Vertical DMOS FETs
Ordering Information
BV
/R
DSX
BV
DGX
250V 6.0Ω 300mA DN3525N8 DN3525NW
* Same as SOT-89. Products shipped on 2000 piece carrier tape reels.
** Die in wafer form.
DS(ON)
(max) (min) TO-243AA* Die**
I
DSS
Order Number / Package
DN3525
Product marking for TO-243AA:
DN5C❋
Where ❋ = 2-week alpha date code
Features
❏ High input impedance
❏ Low input capacitance
❏ Fast switching speeds
❏ Low on resistance
❏ Free from secondary breakdown
❏ Low input and output leakage
Applications
❏ Normally-on switches
❏ Solid state relays
❏ Converters
❏ Linear amplifiers
❏ Constant current sources
❏ Power supply circuits
❏ Telecom
Advanced DMOS Technology
These low threshold depletion-mode (normally-on) transistors
utilize an advanced vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of
bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal
runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
G
D
S
D
Absolute Maximum Ratings
Drain-to-Source Voltage BV
Drain-to-Gate Voltage BV
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
12/13/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
DSX
DGX
Note: See Package Outline section for dimensions.
1
Page 2
Thermal Characteristics
Package ID (continuous)* ID (pulsed) Power Dissipation
@ TA = 25°C °C/W °C/W
TO-243AA 360mA 600mA 1.6W
ID (continuous) is limited by max rated Tj.
*
†
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
increase possible on ceramic substrate.
D
†
θ
jc
θ
15 78
ja
†
IDR*I
360mA 600mA
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol Parameter Min Typ Max Unit Conditions
BV
DSX
V
GS(OFF)
∆V
GS(OFF)
I
GSS
I
D(OFF)
I
DSS
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Drain-to-Souce Breakdown Voltage 250 V VGS = -5.0V, ID = 100µA
Gate-to-Source OFF Voltage -1.5 -3.5 V V
Change in V
with Temperature 4.5 mV/°CV
GS(OFF)
Gate Body Leakage Current 100 nA V
= 15V, ID = 1.0mA
DS
= 15V, ID = 1.0mA
DS
= ±20V, V
GS
DS
Drain-to-Source Leakage Current 1.0 µAVGS = -5.0V, VDS = Max Rating
1.0 mA V
= -5.0V, V
GS
TA = 125°C
Saturated Drain-to-Source Current 300 mA VGS = 0V, V
DS
= 15V
Static Drain-to-Source 6.0 Ω VGS = 0V, ID = 200mA
ON-State Resistance
Change in R
Forward Transconductance 225 mg ID = 150mA, VDS=10V
with Temperature 1.1 %/°CVGS = 0V, ID = 200mA
DS(ON)
Ω
Input Capacitance 270 350
Common Source Output Capacitance 20 60 pF VGS = -5.0V, VDS = 25V, f =1.0Mhz
Reverse Transfer Capacitance 5.0 20
Turn-ON Delay Time 20
Rise Time 25 ID = 150mA,
ns
Turn-OFF Delay Time 25 R
VDD = 25V,
= 25Ω,
GEN
Fall Time 40 VGS = 0V to -10V
Diode Forward Voltage Drop 1.8 V VGS = -5.0V, I
Reverse Recovery Time 800 ns VGS = -5.0V, I
SD
SD
DN3525
DRM
= 0V
= 0.8 Max Rating
DS
= 150mA
= 150mA
Switching Waveforms and Test Circuit
INPUT
OUTPUT
0V
-10V
V
0V
10%
t
(ON)
t
d(ON)
DD
10%
90%
t
r
90%
t
d(OFF)
t
(OFF)
t
F
90%
10%
2
PULSE
GENERATOR
R
gen
INPUT
V
DD
R
L
OUTPUT
D.U.T.
Page 3
Typical Performance Curves
1.4
1.2
1.0
0.8
(Amperes)
D
I
0.6
0.4
0.2
0.0
050100 150 200 250
1.0
0.8
Output Characteristics
VGS=+2V
VGS=0V
VGS=-0.5V
VGS=-0.8V
VGS=-1V
VGS=-1.5V
VGS=-2V
VDS(Volts)
Transconductance vs. Drain Current
VDS=10V
TA=-55°C
TA=25°C
Saturation Characteristics
1.4
1.2
1.0
0.8
(Amperes)
D
0.6
I
0.4
0.2
0.0
0246810
VDS(Volts)
Power Dissipation vs. Ambient Temperature
2.0
TO-243AA
1.6
VGS= +2V
0V
-0.5V
-0.8V
-1V
-1.5V
-2V
0.6
(Siemens)
FS
0.4
G
0.2
0.0
0.0 0.2 0.4 0.6 0.8 1.0
ID(Milliamperes)
Maximum Rated Safe Operating Area
10
TO-243AA (Pulsed)
1.0
TO-243AA (DC)
0.1
(Amperes)
D
I
0.01
TA=125°C
TA=25°C
1.2
PD (Watts)
0.8
0.4
0.0
0255075100 125 150
TA(°C)
Thermal Response Characteristics
1.0
0.8
0.6
TO-243AA
0.4
0.2
Thermal Resistance (normalized)
TA=25°C
PD= 1.6W
0.001
1 100010010
VDS(Volts)
0
0.001 100.01 0.1 1
tp(seconds)
3
Page 4
Typical Performance Curves
BV
Variation with Temperature
DSV
1.2
ID = 100µA
VGS = -5V
1.1
(Normalized)
1.0
DSV
BV
0.9
0.8
-50 0 50 100 150
TJ (°C)
Tr ansfer Characteristics
2000
V
= 10V
DS
1600
1200
(Milliamperes)
800
D
I
400
0
-3 -2 -1 0 1 2
V
(Volts)
GS
TA = -55°C
TA = 25°C
TA = 125°C
On Resistance vs. Drain Current
25
TJ = 25°C
20
VGS = 0V
(ohms)
15
DS(ON)
10
R
5
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
ID (Amperes)
V
GS(OFF)
1.3
1.2
1.1
V
1.0
(normalized)
0.9
0.8
0.7
GS(OFF)
V
0.6
0.5
0.4
-50 -25 0 25 50 75 100 125 150
GS(OFF)
and R
DS(ON)
@ 1mA, 15V
w/ Temperature
R
DS(on)
TJ (°C)
@ 0V, 200mA
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
(normalized)
DS(ON)
R
Capacitance vs. Drain Source Voltage
350
V
= -5V
C
GS
OSS
300
250
200
(picofarads)
150
C
100
50
C
RSS
0
010203040
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
C
ISS
V
(volts)
DS
Gate Drive Dynamic Characteristics
3
ID = 200mA
2
1
VDS=30V
0
(volts)
-1
GS
V
-2
-3
-4
-5
0 1000 2000 3000 4000 5000
Q (picocoulombs)
G
12/13/010
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
4
www.supertex.com
Loading...