Page 1
DLA40IM800PC
Single Diode
High Efficiency Standard Rectifier
Part number
DLA40IM800PC
Marking on Product: DLA40IM800PC
V
RRM
I
FAV
V V1.26
F
=
=
=
800
40
Backside: cathode
V
A
1
2/4
3
Features / Advantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
● Diode for main rectification
● For single and three phase
bridge configurations
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
TO-263 (D2Pak)
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
www.littelfuse.com/disclaimer-electronics.
20190212bData according to IEC 60747and per semiconductor unless otherwise specified
Page 2
DLA40IM800PC
Symbol
Definition
typ.
max.
min.
F
Conditions
Unit
F
Rectifier
Ratings
V
V
I
V
I
V
r
R
R
P
I
I²t
C
R
FAV
F
FSM
RSM
RRM
F
F0
thJC
thCH
tot
J
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current
forward voltage drop
V = V
R
R
I = A
I = AF80
I = A
I = AF80
average forward current
T = °C
C
rectangular
threshold voltage
slope resistance
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
for power loss calculation only
t = 10 ms; (50 Hz), sine T = 45°C
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
junction capacitance
V = V;400 T = 25°Cf = 1 MHz
R
40
40
120
800
800
T = 25°C
VJ
T = 25°C
VJ
VJ
T = °C
150
VJ
T = 25°C
VJ
150
VJ
T = °C
175
VJ
175
VJ
C
VJ
V = 0 V
R
T = °C
150
VJ
V = 0 V
R
T = 45°C
VJ
V = 0 V
R
T = °C150
VJ
V = 0 V
R
VJ
0.25
10
900
10T = 25°C
1.30
1.56
1.65
40
10
0.8 K/W
185 WT = 25°C
300
325
255
275
450
440
325
315
V
V800
µA
mA0.05V = V
V
V
V1.26T = °C
V
A
V0.85T = °C
mΩ
K/W
A
A
A
A
A²s
A²s
A²s
A²s
pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
20190212bData according to IEC 60747and per semiconductor unless otherwise specified
Page 3
DLA40IM800PC
Pr
oductMarkin
g
Part description
Package
Symbol
Definition
typ.
max.
min.
Conditions
Unit
TO-263 (D2Pak)
1)
I
Ratings
I
RMS
T
VJ
T
op
T
stg
RMS current
virtual junction temperature
operation temperature
storage temperature
per terminal
Weight
F
C
1)
I
is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product
RMS
with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact.
Part Number
Date Code
mounting force with clip
XXXXXXXXX
Logo
Location
Lot#
IXYS
123456
yywwZ
D
Diode
=
L
Low Voltage Standard Rectifier
=
A
(up to 1200V)
=
40
Current Rating [A]
=
IM
Single Diode
=
800
Reverse Voltage [V]
=
PC
TO-263AB (D2Pak) (2)
=
-55
-55
20
35 A
150-55
°C175
°C
°C150
g1.5
N60
Ordering
Alternative
DLA40IM800PC-TRL 509995Tape & Reel 800DLA40IM800PCStandard
DLA40IM800PC-TUB Tube 50 525085DLA40IM800PC
Similar Part Package Voltage class
DSI30-08AS TO-263AB (D2Pak) (2) 800
DSI30-12AS TO-263AB (D2Pak) (2) 1200
DSI30-16AS TO-263AB (D2Pak) (2) 1600
Equivalent Circuits for Simulation
V
V
0 max
R
0 max
R
0
0
threshold voltage
slope resistance *
Rectifier
6.8
* on die level
T =
VJ
175
Delivery Mode Quantity Code No.Ordering Number Marking on Product
°C
V0.85
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
20190212bData according to IEC 60747and per semiconductor unless otherwise specified
Page 4
DLA40IM800PC
Outlines TO-263 (D2Pak)
E
2x e
Dim.
W
c2
A
Supplier
Option
L1
A1
D
321
H
4
L
D1
L2
c
10.92
(0.430)
mm (Inches)
9.02
(0.355)
3x b2
E1
2x b
A1
A2
b2 1.14 1.40 0.045 0.055
c2 1.14 1.40 0.045 0.055
D 8.38 9.40 0.330 0.370
D1 8.00 8.89 0.315 0.350
D2
E1 6.22 8.50 0.245 0.335
e1
H 14.61 15.88 0.575 0.625
L1 1.02 1.68 0.040 0.066
W
Millimeter Inches
min max min max
A 4.06 4.83 0.160 0.190
typ. 0.10 typ. 0.004
2.41 0.095
b 0.51 0.99 0.020 0.039
c 0.40 0.74 0.016 0.029
2.5
E 9.65 10.41 0.380 0.410
e
L 1.78 2.79 0.070 0.110
2,54 BSC 0,100 BSC
4.28 0.169
typ.
0.02
0.040
0.098
typ.
0.0008
0.002
All dimensions conform with
and/or within JEDEC standard.
1.78
(0.07)
3.81
(0.150)
2.54 (0.100)
3.05
(0.120)
Recommended min. foot print
1
3
2/4
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
20190212bData according to IEC 60747and per semiconductor unless otherwise specified
Page 5
DLA40IM800PC
260
10
3
8
0
Fig.6Transient
therma
lim
pedancejunctionto
cas
e
Rectifier
60
I
F
40
TVJ= 150°C
TVJ= 125°C
[A]
TVJ= 25°C
20
0
0.5 1.0 1.5
VF[V]
Fig. 1 Forward current versus
voltage drop
60
DC =
1
0.5
0.4
0.33
0.17
40
P
0.08
tot
[W]
20
50 Hz, 80% V
240
220
I
FSM
200
[A]
180
160
TVJ= 150°C
140
120
0.001 0.01 0.1 1
t [s]
Fig. 2 Surge overload current
TVJ = 45°C
R
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
4.0 K/W
8.0 K/W
thHA
RRM
VR = 0 V
I2t
[A2s]
10
TVJ = 45°C
TVJ= 150°C
2
2 3 4 5 6 7 8 9 011
t [ms]
Fig. 3 I2t versus time
40
=
30
DC =
I
F(AV)M
[A]
20
10
1
0.5
0.4
0.33
0.17
0.08
0
0 10 20 30 40 50
I
F(AV)M
0 25 50 75 100 125 150 175 200
T]A[
[°C]
amb
Fig. 4 Power dissipation versus direct output current and ambient temperature
1.0
0.8
Z
thJC
0.6
[K/W]
0.4
0.2
1 10 100 1000 10000
t [ms]
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
0
0 50 100 150 200
TC[°C]
Fig. 5 Max. forward current vs.
case temperature
Constants for Z
i R
(K/W) ti(s)
thi
calculation:
thJC
1 0.04 0.0004
2 0.07 0.002
3 0.19 0.003
4 0.35 0.024
5 0.15 0.25
20190212bData according to IEC 60747and per semiconductor unless otherwise specified
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