Datasheet DK2710AM, DK2710AK, DK2712AM, DK2712AK Datasheet (DYNEX)

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DK27..FA

FEATURES

■ Low Switching Losses At High Frequency

■ Fully Characterised For Operation Up To 20kHz

APPLICATIONS

■ High Power Inverters And Choppers

■ UPS

■ AC Motor Drives

■ Induction Heating

■ Cycloconverters

VOLTAGE RATINGS

ORDERING INFORMATION

When ordering, select the required part number shown in the
Voltage Ratings selection table, then:-

Add K to type number for 3/4" 16 UNF thread, e.g. DK27 12FAK
or
Add M to type number for M16 thread, e.g. DK27 12FAM.
Note: Please use the complete part number when ordering

and quote this number in any future correspondance relating
to your order.

KEY PARAMETERS
V

DRM

1200V

I

T(RMS)

290A

I

TSM

5000A

dVdt 200V/

µs

dI/dt 500A/

µs

t

q

20µs

DK27..FA

Fast Switching Thyristor

Replaces January 2000 version, DS4269-3.0 DS4269-4.0 July 2001

DK27 12FA K or M
DK27 10FA K or M

Conditions

V

RSM

= V

RRM

+ 100V

I

DRM

= I

RRM

= 25mA

at V

RRM

or V

DRM

& T

vj

Type Number Repetitive Peak

Voltages
V

DRM VRRM

V

1200
1000

Outline type code: TO93

See Package Details for further information.

Fig. 1 Package outline

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SURGE RATINGS

Conditions

tp ≥ 10ms half sine; T

case

= 125oC

VR = 0% V

RRM

- 1/4 sine

Max. Units

Symbol

Parameter

I

TSM

Surge (non-repetitive) on-state current

I

2

tI

2

t for fusing 125.0 x 103A2s

5.0 kA

THERMAL AND MECHANICAL DATA

Conditions Min. Max. Units

Symbol

Parameter

- 0.13

o

C/WThermal resistance - junction to caseR

th(j-c)

Mounting torque 35.0Nm
with mounting compound

0.06-

o

C/W

Thermal resistance - case to heatsinkR

th(c-h)

125

o

C

T

vj

Virtual junction temperature

T

stg

Storage temperature range

Reverse (blocking)

-

Mounting torque

30.0 35.0 Nm

-40 150

o

C

-

On-state (conducting) - 125

o

C

dc

CURRENT RATINGS

Symbol Parameter Conditions

UnitsMax.

I

T(AV)

Mean on-state current

I

T(RMS)

RMS value

Half wave resistive load, T

case

= 80oC 185 A

T

case

= 80oC 290 A

MEASUREMENT OF RECOVERED CHARGE - Q

RA1

0.5x I

RR

I

RR

Q

RA1

tp = 1ms

I

TM

dIR/dt

Measurement of Q

RA1

: Q

RA1

= IRR x t

RR

2

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DK27..FA

DYNAMIC CHARACTERISTICS

V

TM

ParameterSymbol Conditions

Maximum on-state voltage At 600A peak, T

case

= 25oC

I

RRM/IDRM

Peak reverse and off-state current At V

RRM/VDRM

, T

case

= 125oC

Gate source 20V, 20Ω
tr < 0.5µs, Tj = 125˚C

dV/dt Maximum linear rate of rise of off-state voltage Linear to 60% V

DRM Tj

= 125oC, Gate open circuit

Min. Max. Units

- 1.85 V

-25mA

- 200 V/µs

Repetitive 50Hz

- 500 A/µs

Non-repetitive

- 800 A/µs

Rate of rise of on-state current

dI/dt

V

T(TO)

Threshold voltage At Tvj = 125oC

r

T

On-state slope resistance At Tvj = 125oC

1.2-V

- 1.0 mΩ

Delay timet

gd

1.5* - µs

Total turn-on time

t

(ON)TOT

3* - µs

Tj = 25˚C, IT = 50A,
V

D

= 300V, IG = 1A,

dI/dt = 30A/µs, dI

G

/dt = 1A/µs

*Typical value.

I

H

Holding current Tj = 25oC, ITM = 1A, VD = 12V - 70 mA

T

j

= 125˚C, IT = 200A, VR = 50V,

dV/dt = 200V/µs (Linear to 60% V

DRM

),

dIR/dt = 30A/µs, Gate open circuit

Turn-off timet

q

20- µs

t

q

code: A

GATE TRIGGER CHARACTERISTICS AND RATINGS

V

DRM

= 12V, T

case

= 25oC, RL = 6Ω

ConditionsParameterSymbol

V

GT

Gate trigger voltage V

DRM

= 12V, T

case

= 25oC, RL = 6Ω

I

GT

Gate trigger current

V

GD

Gate non-trigger voltage At V

DRM Tcase

= 125oC, RL = 1kΩ

- 3.0 V

- 200 mA

- 0.2 V

Typ. Max. Units

V

RGM

Peak reverse gate voltage

I

FGM

Peak forward gate current Anode positive with respect to cathode

P

GM

Peak gate power

P

G(AV)

Mean gate power

- 5.0 V

-4A

-16W

- 3.0 W

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DK27..FA

CURVES

Fig.2 Maximum (limit) on-state characteristics

Fig.3 Gate characteristics

Fig.4 Typical recovered charge (for a device rated V

DRM

= 800V, tq = 20µs)

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DK27..FA

Fig.5 Transient thermal impedance - junction to case

Fig.6 Non-repetitive sub-cycle surge on-state current and I

2

t rating

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DK27..FA

NOTES:

1. V

D

≤ 600V.

2. V

R

≤ 10V.

3. R.C Snubber, C = 0.22µF, R = 4.7Ω

NOTES:

1. V

D

≤ 600V.

2. VR ≤ 10V.

3. R.C Snubber, C = 0.22µF, R = 4.7Ω

Fig.7 Energy per pulse for sinusoidal pulses

Fig.8 Maximum allowable peak on-state current vs pulse width for T

case

= 65˚C

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DK27..FA

NOTES:

1. V

D

≤ 600V.

2. V

R

≤ 10V.

3. R.C Snubber, C = 0.22µF, R = 4.7Ω

NOTES:

1. dI/dt = 25A/µs

2. V

D

≤ 600V.

3. V

R

≤ 10V.

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

Fig.9 Maximum allowable peak on-state current vs pulse width for T

case

= 90˚C

Fig.10 Energy per pulse for trapezoidal pulses

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NOTES:

1. dI/dt = 25A/µs

2. V

D

≤ 600V.

3. V

R

≤ 10V.

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

NOTES:

1. dI/dt = 25A/µs

2. V

D

≤ 600V.

3. VR ≤ 10V.

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

Fig.11 Maximum allowable peak on-state current vs pulse width for T

case

= 65˚C

Fig.12 Maximum allowable peak on-state current vs pulse width for T

case

= 90˚C

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NOTES:

1. dI/dt = 50A/µs

2. V

D

≤ 600V.

3. V

R

≤ 10V.

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

NOTES:

1. dI/dt = 50A/µs

2. V

D

≤ 600V.

3. V

R

≤ 10V.

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

Fig.13 Energy per pulse for trapezoidal pulses

Fig.14 Maximum allowable peak on-state current vs pulse width for T

case

= 65˚C

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DK27..FA

NOTES:

1. dI/dt = 50A/µs

2. V

D

≤ 600V.

3. V

R

≤ 10V.

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

NOTES:

1. dI/dt = 100A/µs

2. V

D

≤ 600V.

3. V

R

≤ 10V.

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

Fig.15 Maximum allowable peak on-state current vs pulse width for T

case

= 65˚C

Fig.16 Energy per pulse for trapezoidal pulses

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DK27..FA

NOTES:

1. dI/dt = 100A/µs

2. V

D

≤ 600V.

3. V

R

≤ 10V.

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

NOTES:

1. dI/dt = 100A/µs

2. V

D

≤ 600V.

3. V

R

≤ 10V.

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

Fig.17 Maximum allowable peak on-state current vs pulse width for T

case

= 65˚C

Fig.18 Maximum allowable peak on-state current vs pulse width for T

case

= 90˚C

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DK27..FA

PACKAGE DETAILS

For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.

160 ± 10

8 min

8 min

Ø8.4 ± 0.3

210 ± 10

Ø4

15 max

30 max

Hex. 27AF

M = M12
K = 1/2" 20 UNF

K = 20.6 ± 0.6
M = 18.0 ± 0.5

Nominal weight: 120g

Mounting torque: 15Nm ±10%

Gate lead colour: White

Cathode lead colour: Red

Package outine type code: TO94

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DK27..FA

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability
of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.

Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution
(PACs).

DEVICE CLAMPS

Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded
clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm
discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes.

Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839

HEATSINKS

The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.

CUSTOMER SERVICE CENTRES

Mainland Europe Tel: [phone]. Fax: [phone]
North America Tel: [phone]. Fax: [phone].
UK, Scandinavia & Rest Of World Tel: [phone]. Fax: [phone]

SALES OFFICES

Mainland Europe Tel: [phone]. Fax: [phone]
North America Tel: [phone]. Fax: [phone]. Toll Free: 1.888.33.DYNEX (39639) /

Tel: [phone]. Fax: [phone].
UK, Scandinavia & Rest Of World Tel: [phone]. Fax: [phone]

These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4269-3 Issue No. 3.0 July 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

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Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
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