Datasheet DK2414FCM, DK2414FCK, DK2420FCM, DK2420FCK, DK2418FCM Datasheet (DYNEX)

DK24..FC

DK24..FC

Fast Switching Thyristor

Replaces January 2000 version, DS4268-3.0 DS4268-4.0 July 2001

FEATURES

■ Low Switching Losses At High Frequency

■ Fully Characterised For Operation Up To 20kHz

APPLICATIONS

■ High Power Inverters And Choppers

■ UPS

■ AC Motor Drives

■ Induction Heating

■ Cycloconverters

VOLTAGE RATINGS

Type Number Repetitive Peak

Voltages
V

DRM VRRM

V

DK24 20FC K or M
DK24 18FC K or M
DK24 16FC K or M
DK24 14FC K or M

2000
1800
1600
1400

Conditions

V

= V

RSM

I

= I

DRM

at V

RRM

RRM

= 25mA

RRM

or V

+ 100V

& T

DRM

ORDERING INFORMATION

When ordering, select the required part number shown in the
Voltage Ratings selection table, then:-

Add K to type number for 3/4" 16 UNF thread, e.g. DK24 16FCK
or
Add M to type number for M16 thread, e.g. DK24 14FCM.
Note: Please use the complete part number when ordering

and quote this number in any future correspondance relating
to your order.

KEY PARAMETERS
V

DRM

I

T(RMS)

I

TSM

dVdt 200V/
dI/dt 500A/
t

q

vj

2000V
260A
4000A

µs
µs

50µs

Outline type code: TO93

See Package Details for further information.

Fig. 1 Package outline

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DK24..FC

CURRENT RATINGS

Symbol Parameter Conditions

I

T(AV)

I

T(RMS)

Mean on-state current

RMS value

Half wave resistive load, T

T

= 80oC 260 A

case

SURGE RATINGS

Symbol

I

TSM

2

tI

I

Parameter

Surge (non-repetitive) on-state current

2

t for fusing 80.0 x 103A2s

tp ≥ 10ms half sine; T

Conditions

VR = 0% V

RRM

THERMAL AND MECHANICAL DATA

Symbol

th(j-c)

th(c-h)

T

vj

Parameter

Thermal resistance - junction to caseR

Thermal resistance - case to heatsinkR

Virtual junction temperature

dc
Mounting torque 35.0Nm

with mounting compound
On-state (conducting) - 125

Reverse (blocking)

Conditions Min. Max. Units

= 80oC 165 A

case

Max. Units

= 125oC

case

4.0 kA

- 1/4 sine

- 0.13

0.06-

-

125

UnitsMax.

o

C/W

o

C/W

o

o

C

C

T

stg

-

Storage temperature range

Mounting torque

MEASUREMENT OF RECOVERED CHARGE - Q

RA1

: Q

= IRR x t

RA1

Q

I

RR

2

RA1

0.5x I

RR

RR

2/13

Measurement of Q

I

TM

tp = 1ms

dIR/dt

RA1

-40 150

o

C

30.0 35.0 Nm

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DYNAMIC CHARACTERISTICS

DK24..FC

ParameterSymbol Conditions

V

TM

I

RRM/IDRM

Maximum on-state voltage At 450A peak, T

Peak reverse and off-state current At V

RRM/VDRM

dV/dt Maximum linear rate of rise of off-state voltage Linear to 60% V

Gate source 20V, 20Ω

dI/dt

Rate of rise of on-state current

tr < 0.5µs, Tj = 125˚C

V

T(TO)

r

gd

t

(ON)TOT

I

T

H

q

Threshold voltage At Tvj = 125oC

On-state slope resistance At Tvj = 125oC
Delay timet

Total turn-on time

Tj = 25˚C, IT = 50A,
V

= 300V, IG = 1A,

D

dI/dt = 30A/µs, dI

Holding current Tj = 25oC, ITM = 1A, VD = 12V - 70 mA

T

Turn-off timet

= 125˚C, IT = 200A, VR = 50V,

j

dV/dt = 200V/µs (Linear to 60% V
dIR/dt = 30A/µs, Gate open circuit

= 25oC

case

, T

= 125oC

case

= 125oC, Gate open circuit

DRM Tj

/dt = 1A/µs

G

Repetitive 50Hz

Non-repetitive

code: C

t

q

),

DRM

Min. Max. Units

- 2.0 V

-25mA

- 200 V/µs

- 500 A/µs

- 800 A/µs

1.25-V

- 1.66 mΩ

1.5* - µs

3* - µs

50- µs

*Typical value.

GATE TRIGGER CHARACTERISTICS AND RATINGS

V

GT

I

GT

V

GD

V

RGM

I

FGM

P

GM

P

G(AV)

Gate trigger voltage V

Gate trigger current

Gate non-trigger voltage At V

DRM

V

DRM

= 12V, T

= 12V, T

DRM Tcase

Peak reverse gate voltage

Peak forward gate current Anode positive with respect to cathode

Peak gate power

Mean gate power

ConditionsParameterSymbol

= 25oC, RL = 6Ω

case

= 25oC, RL = 6Ω

case

= 125oC, RL = 1kΩ

Typ. Max. Units

- 3.0 V

- 200 mA

- 0.2 V

- 5.0 V

-4A

-16W

- 3.0 W

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DK24..FC

CURVES

Fig.2 Maximum (limit) on-state characteristics

Fig.4 Typical recovered charge (for a device rated V

Fig.3 Gate characteristics

= 1000V, tq = 50µs)

DRM

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DK24..FC

Fig.5 Transient thermal impedance - junction to case

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Fig.6 Non-repetitive sub-cycle surge on-state current and I

2

t rating

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DK24..FC

NOTES:

1. V

≤ 600V.

D

2. V

≤ 10V.

R

3. R.C Snubber, C = 0.22µF, R = 4.7Ω

Fig.7 Energy per pulse for sinusoidal pulses

NOTES:

1. V

≤ 600V.

D

2. V

≤ 10V.

R

3. R.C Snubber, C = 0.22µF, R = 4.7Ω

Fig.8 Maximum allowable peak on-state current vs pulse width for T

case

= 65˚C

6/13

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NOTES:

1. V

≤ 600V.

D

2. V

≤ 10V.

R

3. R.C Snubber, C = 0.22µF, R = 4.7Ω

DK24..FC

Fig.9 Maximum allowable peak on-state current vs pulse width for T

NOTES:

1. dI/dt = 25A/µs

2. V

≤ 600V.

D

3. V

≤ 10V.

R

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

Fig.10 Energy per pulse for trapezoidal pulses

case

= 90˚C

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DK24..FC

NOTES:

1. dI/dt = 25A/µs

2. V

≤ 600V.

D

3. V

≤ 10V.

R

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

Fig.11 Maximum allowable peak on-state current vs pulse width for T

NOTES:

1. dI/dt = 25A/µs

2. V

≤ 600V.

D

3. V

≤ 10V.

R

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

Fig.12 Maximum allowable peak on-state current vs pulse width for T

case

case

= 65˚C

= 90˚C

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NOTES:

1. dI/dt = 50A/µs

2. V

≤ 600V.

D

3. V

≤ 10V.

R

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

Fig.13 Energy per pulse for trapezoidal pulses

DK24..FC

NOTES:

1. dI/dt = 50A/µs

2. V

≤ 600V.

D

3. VR ≤ 10V.

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

Fig.14 Maximum allowable peak on-state current vs pulse width for T

case

= 65˚C

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DK24..FC

NOTES:

1. dI/dt = 50A/µs

2. V

≤ 600V.

D

3. V

≤ 10V.

R

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

Fig.15 Maximum allowable peak on-state current vs pulse width for T

NOTES:

1. dI/dt = 100A/µs

2. V

≤ 600V.

D

3. VR ≤ 10V.

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

Fig.16 Energy per pulse for trapezoidal pulses

case

= 65˚C

10/13

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NOTES:

1. dI/dt = 100A/µs

2. V

≤ 600V.

D

3. V

≤ 10V.

R

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

DK24..FC

Fig.17 Maximum allowable peak on-state current vs pulse width for T

NOTES:

1. dI/dt = 100A/µs

2. V

≤ 600V.

D

3. V

≤ 10V.

R

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

Fig.18 Maximum allowable peak on-state current vs pulse width for T

case

case

= 65˚C

= 90˚C

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DK24..FC

PACKAGE DETAILS

For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.

Ø4

15 max

Ø8.4 ± 0.3

8 min

210 ± 10

30 max

M = M12
K = 1/2" 20 UNF

Mounting torque: 15Nm ±10%

Cathode lead colour: Red

Package outine type code: TO94

160 ± 10

Hex. 27AF

8 min

K = 20.6 ± 0.6
M = 18.0 ± 0.5

Nominal weight: 120g

Gate lead colour: White

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DK24..FC

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability
of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.

Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution
(PACs).

DEVICE CLAMPS

Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded
clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm
discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes.

Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839

HEATSINKS

The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.

http://www.dynexsemi.com

e-mail: [email protected]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.

All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

CUSTOMER SERVICE CENTRES

Mainland Europe Tel: [phone]. Fax: [phone]
North America Tel: [phone]. Fax: [phone].
UK, Scandinavia & Rest Of World Tel: [phone]. Fax: [phone]

SALES OFFICES

Mainland Europe Tel: [phone]. Fax: [phone]
North America Tel: [phone]. Fax: [phone]. Toll Free: 1.888.33.DYNEX (39639) /

Tel: [phone]. Fax: [phone].
UK, Scandinavia & Rest Of World Tel: [phone]. Fax: [phone]

These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4268-4 Issue No. 4.0 July 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

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