Datasheet DK1312FXM, DK1312FXK, DK1310FXM, DK1310FXK Datasheet (DYNEX)

DK13..FX

DK13..FX

Fast Switching Thyristor

Replaces January 2000 version, DS4411-2.0 DS4411-3.0 July 2001

FEATURES

■ Low Switching Losses At High Frequency

■ Fully Characterised For Operation Up To 20kHz

APPLICATIONS

■ High Power Inverters And Choppers

■ UPS

■ AC Motor Drives

■ Induction Heating

■ Cycloconverters

VOLTAGE RATINGS

Type Number Repetitive Peak

Voltages
V

DRM VRRM

V

DK13 12FX K or M
DK13 10FX K or M

1200
1000

Conditions

V

= V

RSM

I

= I

DRM

RRM

= 15mA

RRM

+ 100V

KEY PARAMETERS
V

DRM

I

T(RMS)

I

TSM

dVdt 200V/
dI/dt 500A/
t

q

1200V
130A
1600A

µs
µs

15µs

at V

RRM

or V

DRM

& T

ORDERING INFORMATION

When ordering, select the required part number shown in the
Voltage Ratings selection table, then:-

Add K to type number for 1/2" 20 UNF thread, e.g. DK13 10FXK
or
Add M to type number for M12 thread, e.g. DK13 10FXM.
Note: Please use the complete part number when ordering

and quote this number in any future correspondance relating
to your order.

vj

See Package Details for further information.

Outline type code: TO94

Fig. 1 Package outline

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DK13..FX

CURRENT RATINGS

Symbol Parameter Conditions

I

T(AV)

I

T(RMS)

Mean on-state current

RMS value

Half wave resistive load, T

T

= 80oC 130 A

case

SURGE RATINGS

Symbol

I

TSM

2

tI

I

Parameter

Surge (non-repetitive) on-state current

2

t for fusing 12.8 x 103A2s

tp ≥ 10ms half sine; T

Conditions

VR = 0% V

RRM

THERMAL AND MECHANICAL DATA

Symbol

th(j-c)

th(c-h)

T

vj

Parameter

Thermal resistance - case to heatsinkR

Virtual junction temperature

dc
Mounting torque 15.0Nm

with mounting compound
On-state (conducting) - 125

Reverse (blocking)

Conditions Min. Max. Units

UnitsMax.

= 80oC83A

case

Max. Units

= 125oC

case

1.6 kA

- 1/4 sine

o

- 0.24

0.08-

125

-

C/WThermal resistance - junction to caseR

o

C/W

o

o

C

C

T

stg

-

Storage temperature range

Mounting torque

MEASUREMENT OF RECOVERED CHARGE - Q

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Measurement of Q

I

TM

tp = 1ms

dIR/dt

RA1

: Q

= IRR x t

RA1

Q

I

RR

2

RA1

0.5x I

RR

RR

RA1

o

-40 150

C

12.0 15.0 Nm

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DYNAMIC CHARACTERISTICS

DK13..FX

ParameterSymbol Conditions

V

TM

I

RRM/IDRM

Maximum on-state voltage At 300A peak, T

Peak reverse and off-state current At V

RRM/VDRM

dV/dt Maximum linear rate of rise of off-state voltage Linear to 60% V

Gate source 20V, 20Ω

dI/dt

Rate of rise of on-state current

tr < 0.5µs, Tj = 125˚C

V

T(TO)

r

gd

t

(ON)TOT

I

T

H

q

Threshold voltage At Tvj = 125oC

On-state slope resistance At Tvj = 125oC
Delay timet

Total turn-on time

Tj = 25˚C, IT = 50A,
V

= 300V, IG = 1A,

D

dI/dt =50A/µs, dI

Holding current Tj = 25oC, ITM = 1A, VD = 12V 60* - mA

T

= 125˚C, IT = 100A, VR = 50V,

j

Turn-off timet

dV/dt = 200V/µs (Linear to 60% V
dIR/dt = 30A/µs, Gate open circuit

, T

case

DRM Tj

= 25oC

case

= 125oC

= 125oC, Gate open circuit

Repetitive 50Hz

Non-repetitive

/dt = 1A/µs

G

),

DRM

code: X

t

q

Min. Max. Units

- 2.35 V

-15mA

- 200 V/µs

- 500 A/µs

- 800 A/µs

1.5-V

- 2.83 mΩ

-5µs

-3µs

15- µs

*Typical value.

GATE TRIGGER CHARACTERISTICS AND RATINGS

V

GT

I

GT

V

GD

V

RGM

I

FGM

P

GM

P

G(AV)

Gate trigger voltage V

Gate trigger current

Gate non-trigger voltage At V

DRM

V

DRM

= 12V, T
= 12V, T

DRM Tcase

Peak reverse gate voltage

Peak forward gate current Anode positive with respect to cathode

Peak gate power

Mean gate power

ConditionsParameterSymbol

= 25oC, RL = 6Ω

case

= 25oC, RL = 6Ω

case

= 125oC, RL = 1kΩ

Typ. Max. Units

- 3.0 V

- 200 mA

- 0.2 V

- 5.0 V

-4A

-16W

- 3.0 W

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DK13..FX

CURVES

Fig.2 Maximum (limit) on-state characteristics

Fig.4 Typical recovered charge (for a device rated V

Fig.3 Gate characteristics

= 600V, tq = 10µs)

DRM

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DK13..FX

Fig.5 Transient thermal impedance - junction to case

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Fig.6 Non-repetitive sub-cycle surge on-state current and I

2

t rating

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DK13..FX

NOTES:

1. V

≤ 600V.

D

2. V

≤ 10V.

R

3. R.C Snubber, C = 0.22µF, R = 4.7Ω

Fig.7 Energy per pulse for sinusoidal pulses

NOTES:

1. V

≤ 600V.

D

2. V

≤ 10V.

R

3. R.C Snubber, C = 0.22µF, R = 4.7Ω

Fig.8 Maximum allowable peak on-state current vs pulse width for T

case

= 65˚C

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NOTES:

1. V

≤ 600V.

D

2. V

≤ 10V.

R

3. R.C Snubber, C = 0.22µF, R = 4.7Ω

DK13..FX

Fig.9 Maximum allowable peak on-state current vs pulse width for T

NOTES:

1. dI/dt = 25A/µs

2. V

≤ 600V.

D

3. VR ≤ 10V.

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

Fig.10 Energy per pulse for trapezoidal pulses

case

= 90˚C

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DK13..FX

NOTES:

1. dI/dt = 25A/µs

2. V

≤ 600V.

D

3. V

≤ 10V.

R

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

Fig.11 Maximum allowable peak on-state current vs pulse width for T

NOTES:

1. dI/dt = 25A/µs

2. V

≤ 600V.

D

3. V

≤ 10V.

R

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

Fig.12 Maximum allowable peak on-state current vs pulse width for T

case

case

= 65˚C

= 90˚C

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NOTES:

1. dI/dt = 50A/µs

2. V

≤ 600V.

D

3. V

≤ 10V.

R

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

Fig.13 Energy per pulse for trapezoidal pulses

DK13..FX

NOTES:

1. dI/dt = 50A/µs

2. V

≤ 600V.

D

3. VR ≤ 10V.

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

Fig.14 Maximum allowable peak on-state current vs pulse width for T

case

= 65˚C

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DK13..FX

NOTES:

1. dI/dt = 50A/µs

2. V

≤ 600V.

D

3. V

≤ 10V.

R

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

Fig.15 Maximum allowable peak on-state current vs pulse width for T

NOTES:

1. dI/dt = 100A/µs

2. V

≤ 600V.

D

3. V

≤ 10V.

R

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

Fig.16 Energy per pulse for trapezoidal pulses

case

= 65˚C

10/13

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NOTES:

1. dI/dt = 100A/µs

2. V

≤ 600V.

D

3. V

≤ 10V.

R

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

DK13..FX

Fig.17 Maximum allowable peak on-state current vs pulse width for T

NOTES:

1. dI/dt = 100A/µs

2. V

≤ 600V.

D

3. V

≤ 10V.

R

4. R.C Snubber, C = 0.22µF, R = 4.7Ω

Fig.18 Maximum allowable peak on-state current vs pulse width for T

case

case

= 65˚C

= 90˚C

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DK13..FX

PACKAGE DETAILS

For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.

Ø4

15 max

Ø8.4 ± 0.3

8 min

210 ± 10

30 max

M = M12
K = 1/2" 20 UNF

Mounting torque: 15Nm ±10%

Cathode lead colour: Red

Package outine type code: TO94

160 ± 10

Hex. 27AF

8 min

K = 20.6 ± 0.6
M = 18.0 ± 0.5

Nominal weight: 120g

Gate lead colour: White

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DK13..FX

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability
of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.

Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution
(PACs).

DEVICE CLAMPS

Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded
clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm
discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes.

Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839

HEATSINKS

The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.

http://www.dynexsemi.com

e-mail: [email protected]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

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All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

CUSTOMER SERVICE CENTRES

Mainland Europe Tel: [phone]. Fax: [phone]
North America Tel: [phone]. Fax: [phone].
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SALES OFFICES

Mainland Europe Tel: [phone]. Fax: [phone]
North America Tel: [phone]. Fax: [phone]. Toll Free: 1.888.33.DYNEX (39639) /

Tel: [phone]. Fax: [phone].
UK, Scandinavia & Rest Of World Tel: [phone]. Fax: [phone]

These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4411-4 Issue No. 3.0 July 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

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