Page 1
DIM800FSS17-A000
C1E1
C2E2
G
Aux E
Aux C
DIM800FSS17-A000
Single Switch IGBT Module
Replaces October 2001 version DS5445-3.0 DS5445-4.0 March 2002
FEATURES
■ 10µs Short Circuit Withstand
■ High Thermal Cycling Capability
■ Non Punch Through Silicon
APPLICATIONS
■ Inverters
■ Motor Controllers
■ Traction Drives
The Powerline range of modules includes half bridge, dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 2400A.
The DIM800FSS17-A000 is a single switch 1700V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand. This module is
optimised for traction drives and other applications requiring high
thermal cycling capability.
KEY PARAMETERS
V
CES
* (typ) 2.7V
V
I
C
I
C(PK)
CE(sat)
(max) 800A
(max) 1600A
*(measured at the power busbars and not the auxiliary terminals)
Aux C
G
Aux E
Fig. 1 Single switch circuit diagram
1700V
External connection
C2C1
E1 E2
External connection
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM800FSS17-A000
Note: When ordering, please use the whole part number.
Outline type code: F
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10
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Page 2
DIM800FSS17-A000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
= 25˚C unless stated otherwise
T
case
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
I2t
V
isol
Q
PD
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
2
Diode I
t value
Isolation voltage - per module
Partial discharge - per module
Test Conditions
= 0V
V
GE
-
T
= 68˚C
case
1ms, T
T
case
V
R
= 105˚C
case
= 25˚C, Tj = 150˚C
= 0, tp = 10ms, Tvj = 125˚C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
= 1500V, V2 = 1100V, 50Hz RMS
1
Max.
1700
±20
800
1600
6000
120
4000
10
Units
V
V
A
A
W
2
kA
V
PC
s
2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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Page 3
THERMAL AND MECHANICAL RATINGS
DIM800FSS17-A000
Internal insulation material: Al2O
Baseplate material: Cu
Creepage distance: 20mm
Clearance: 10mm
CTI (Critical Tracking Index): 175
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
Thermal resistance - transistor
Thermal resistance - diode
Thermal resistance - case to heatsink
Parameter
(per module)
T
T
stg
Junction temperature
j
Storage temperature range
3
Test Conditions
Continuous dissipation -
Min.
-
Typ.
Max.
-
21
Units
˚C/kW
junction to case
Continuous dissipation -
-
-
40
˚C/kW
junction to case
Mounting torque 5Nm
-
-
8
˚C/kW
(with mounting grease)
Transistor
Diode
-
-
-
–40
150
-
125
-
-
125
˚C
˚C
˚C
-
Screw torque
Mounting - M6
Electrical connections - M4
Electrical connections - M8
-
-
-
-
-
-
10
5
Nm
2
Nm
Nm
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10
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Page 4
DIM800FSS17-A000
ELECTRICAL CHARACTERISTICS
T
= 25˚C unless stated otherwise.
case
Symbol
I
CES
I
GES
V
GE(TH)
V
CE(sat)
I
F
I
FM
†
V
F
C
ies
L
M
Parameter
Collector cut-off current
Gate leakage current
Gate threshold voltage
†
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Module inductance
Test Conditions
= 0V, VCE = V
V
GE
VGE = 0V, VCE = V
= ±20V, VCE = 0V
V
GE
= 40mA, VGE = V
I
C
CES
CES
, T
CE
VGE = 15V, IC = 800A
= 15V, IC = 800A, , T
V
GE
DC
= 1ms
t
p
= 800A
I
F
= 800A, T
I
F
V
= 25V, VGE = 0V, f = 1MHz
CE
= 125˚C
case
-
= 125˚C
case
case
= 125˚C
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
Typ.
-
-
-
5.5
2.7
3.4
-
-
2.2
2.3
60
20
Max.
1
25
4
6.5
3.2
4.0
800
1600
2.5
2.6
-
-
Units
mA
mA
µA
V
V
V
A
A
V
V
nF
nH
R
SC
INT
Data
Internal transistor resistance
Short circuit. I
SC
Tj = 125˚C, VCC = 1000V,
tp ≤ 10µs, V
IEC 60747-9
Note:
†
Measured at the power busbars and not the auxiliary terminals)
* L is the circuit inductance + L
M
CE(max)
= V
-
– L*. di/dt
CES
0.27
-
3700
I
1
I
2
-
3200
-
mΩ
-
-
-
A
A
4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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Page 5
ELECTRICAL CHARACTERISTICS
T
= 25˚C unless stated otherwise
case
DIM800FSS17-A000
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
Q
I
rr
E
REC
T
= 125˚C unless stated otherwise
case
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
g
Diode reverse recovery charge
rr
Diode reverse current
Diode reverse recovery energy
Parameter
Test Conditions
= 800A
I
C
= ±15V
V
GE
= 900V
V
CE
R
G(ON)
= R
G(OFF)
= 2.2Ω
L ~ 100nH
= 800A, VR = 900V,
I
F
/dt = 4000A/µs
dI
F
Min.
-
-
-
-
-
-
-
-
-
-
Typ.
1250
170
230
250
250
220
9.0
200
460
130
Max.
-
-
-
-
-
-
-
-
-
-
Units
ns
ns
mJ
ns
ns
mJ
µC
µC
A
mJ
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Test Conditions
= 800A
I
C
= ±15V
V
GE
= 900V
V
CE
R
G(ON)
= R
G(OFF)
= 2.2Ω
L ~ 100nH
IF = 800A, VR = 900V,
dI
/dt = 4000A/µs
F
Min.
-
-
-
-
-
-
-
-
-
Typ.
1500
200
360
400
250
340
330
530
200
Max.
-
-
-
-
-
-
-
-
-
Units
ns
ns
mJ
ns
ns
mJ
µC
A
mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/10
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Page 6
DIM800FSS17-A000
TYPICAL CHARACTERISTICS
1800
Common emitter
T
= 25˚C
1600
case
Vce is measured at power busbars
and not the auxiliary terminals
1400
1200
- (A)
c
1000
800
600
Collector current, I
400
VGE = 20V
200
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Collector-emitter voltage, V
ce
- (V)
Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics
15V
12V
10V
1800
Common emitter
= 125˚C
T
1600
case
Vce is measured at power busbars
and not the auxiliary terminals
1400
1200
- (A)
c
1000
800
600
Collector current, I
400
VGE = 20V
200
0
15V
12V
10V
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Collector-emitter voltage, V
ce
- (V)
400
350
300
Conditions:
V
= 900V
ce
T
= 125°C
c
R
= 2.2Ω
g
800
600
Conditions:
= 900V
V
ce
IC = 800A
Tc = 125°C
250
200
400
150
Switching energy - (mJ)
100
50
0
0 200 400 600 800 1000
Collector current, I
- (A)
C
E
on
E
off
E
rec
Switching energy - (mJ)
200
0
024681012
Gate Resistance, R
- (Ohms)
g
Fig. 5 Typical switching energy vs collector current Fig. 6 Typical switching energy vs gate resistance
E
off
E
on
E
rec
6/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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Page 7
DIM800FSS17-A000
g
)
1600
Tj = 25˚C
T
= 125˚C
j
VF is measured at power busbars
1400
and not the auxiliary terminals
1200
1000
- (A)
F
800
600
Foward current, I
400
200
0
0
0.5 1.0 1.5
Foward volta
2.0
e, V
Fig. 7 Diode typical forward characteristics
2.5 3.0 3.5
- (V
2000
1800
1600
1400
- (A)
C
1200
1000
800
Collector current, I
600
400
T
= 125˚C
case
200
= ±15V
V
ge
= 2.2Ω
R
g(min)
0
0 400 800
Fig. 8 Reverse bias safe operating area
Chip
Module
1200
Collector-emitter voltage, V
ce
- (V)
1600
2000
800
700
600
- (A)
500
R
400
300
Reverse current, I
200
100
Tj = 125˚C
0
0 400 800
Reverse voltage, V
1200
R
Fig. 9 Diode reverse bias safe operating area
- (V)
1600
2000
10000
= 125˚C, Tc = 75˚C
T
vj
1000
- (A)
C
100
I
DC
C(max)
Collector current, I
10
1
1 10 100 1000 10000
Collector-emitter voltage, V
ce
- (V)
Fig. 10 Forward bias safe operating area
t
= 50µs
p
t
= 100µs
p
= 1 ms
t
p
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/10
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Page 8
DIM800FSS17-A000
100
- (°C/kW )
th (j-c)
10
1
Transient thermal impedance, Z
0.1
1 10 1000100
Pulse width, t
Fig. 11 Transient thermal impedance
- (ms)
p
Diode
Transistor
10000
1400
1200
1000
- (A)
C
800
600
400
DC collector current, I
200
0
0 20 406080100120140160
Case temperature, T
case
- (˚C)
Fig. 12 DC current rating vs case temperature
8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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Page 9
DIM800FSS17-A000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
16
2.5
18.5
6x M4
Aux C
14.5
62
5
6
Aux E
G
11
35
15
15
20
62
57
43.3 18
57
6x Ø7
65
65
C1E1
C2E2
4x M8
38
28
5
Main Terminal screw plastic hole depth (M8) = 16.8 ± 0.3
Auxiliary and Gate pin plastic hole depth (M4) = 9± 0.3
Copper terminal thickness, Main Terminal pins = 1.5 ± 0.1
Copper terminal thickness, Auxiliary and Gate pin = 0.9 ± 0.1
Nominal weight: 1600g
Module outline type code: F
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 9/10
140
31.5
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Page 10
DIM800FSS17-A000
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
CUSTOMER SERVICE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19.
France & Spain: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59.
Germany, Northern Europe & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
North America: Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2002 Publication No. DS5445-4 Issue No. 4.0 March 2002
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM
10/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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