Datasheet DGT304SE13 Datasheet (DYNEX)

DGT304SE13

DGT304SE

Gate Turn-off Thyristor

Replaces January 2000 version, DS4609-4.0 DS4609-4.1 February 2002

APPLICATIONS

■ Variable speed A.C. motor drive inverters (VSD-AC)

■ Uninterruptable Power Supplies

■ High Voltage Converters

■ Choppers

■ Welding

■ Induction Heating

■ DC/DC Converters

FEATURES

■ Double Side Cooling

■ High Reliability In Service

■ High Voltage Capability

■ Fault Protection Without Fuses

■ High Surge Current Capability

■ Turn-off Capability Allows Reduction In Equipment

Size And Weight. Low Noise Emission Reduces Acoustic
Cladding Necessary For Environmental Requirements

KEY PARAMETERS

I

TCM

V

DRM

I

T(AV)

dV

/dt 500V/µs

D

di

/dt 500A/µs

T

700A

1300V

250A

Outline type code: E.

See Package Details for further information.

VOLTAGE RATINGS

Repetitive Peak Off-state Voltage

V

DRM

V

1300DGT304SE13

Repetitive Peak Reverse Voltage

V

RRM

V

16

ConditionsType Number

= 125oC, IDM = 50mA,

T

vj

= 50mA, VRG = 2V

I

RRM

CURRENT RATINGS

Symbol Parameter Conditions Max.

I

TCM

I

T(AV)

I

T(RMS)

Repetitive peak controllable on-state current

Mean on-state current

RMS on-state current A

V

= 60%V

D

THS = 80oC. Double side cooled. Half sine 50Hz.

THS = 80oC. Double side cooled. Half sine 50Hz.

, Tj = 125oC, diGQ/dt =15A/µs, Cs = 2.0µF

DRM

250

390

Units

A700

A

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DGT304SE13

SURGE RATINGS

Symbol Parameter

I

TSM

I2t

diT/dt Critical rate of rise of on-state current 500

dVD/dt

Surge (non-repetitive) on-state current

I2t for fusing

Rate of rise of off-state voltage

10ms half sine. Tj = 125oC

10ms half sine. Tj =125oC
VD = 60% V

Rise time < 1.0µs
To 80% V

DRM

Conditions

, IT = 700A, Tj = 125oC, IFG > 20A,

DRM

; RGK ≤ 1.5Ω, Tj = 125oC

GATE RATINGS

Symbol Parameter Conditions

V

RGM

I

FGM

P

FG(AV)

P

RGM

diGQ/dt

Peak forward gate current

Average forward gate power

Peak reverse gate power

Rate of rise of reverse gate current

This value maybe exceeded during turn-off

Min.

Max. Units

4.0

80000

500 V/µs

-Peak reverse gate voltage

-

-

-

10

16

50

10

50

kA

2

s

A

A/µs

UnitsMax.

V

A

W

6

kW

A/µs

t

ON(min)

t

OFF(min)

Minimum permissable on time
Minimum permissable off time

THERMAL RATINGS

Symbol Parameter Conditions Max.Min.

Double side cooled

R

R

th(c-hs)

T

T

OP/Tstg

th(j-hs)

vj

-

DC thermal resistance - junction to heatsink
surface

Contact thermal resistance

Virtual junction temperature

Operating junction/storage temperature range
Clamping force

Anode side cooled

Cathode side cooled
Clamping force 5.5kN

With mounting compound

per contact

-20

- µs40

Units

- 0.075oC/W

-

- 0.20

- 0.018

-

-40

5.0

125

125

6.0

o

o

o

µs

C/W0.12

C/W

C/W

o

C

o

C

kN

2/13

CHARACTERISTICS

= 125oC unless stated otherwise

T

j

DGT304SE13

Symbol Parameter

On-state voltageV

Peak off-state current

Peak reverse current

Gate trigger voltage

Gate trigger current

Reverse gate cathode current

Turn-on energy

Delay time

Rise time

r

Turn-off energy

Storage time

Fall time

I

I

E

E

I

RRM

V

I

RGM

t

t

DM

GT

t

t

OFF

gs

gf

TM

GT

ON

d

Min. Max. Units

- 2.2 V

-50mA

At 600A peak, I

At = V

At V

, VRG = 2V - 25 mA

DRM

RRM

Conditions

= 2A d.c.

G(ON)

VD = 24V, IT = 100A, Tj = 25oC - 0.9 V

= 24V, IT = 100A, Tj = 25oC - 1.0 A

V

D

V

= 16V, No gate/cathode resistor

RGM

= 900V, IT = 600A, dIT/dt = 300A/µs

D

50-

mA

mJ130-V
IFG = 20A, rise time < 1.0µs
RL = (Residual inductance 3µH)

- 3.0 µs

- 350 mJ

=600A, VDM = 750V

I

T

-10µs

Snubber Cap Cs = 1.5µF,

µs1.5-

µs11-

t

gq

Q

GQ

Q

GQT

Gate controlled turn-off time

Turn-off gate charge
Total turn-off gate charge

diGQ/dt = 15A/µs
RL = (Residual inductance 3µH)

- 700

- 1400 µC

µs0.9-

µC

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DGT304SE13

CURVES

Fig.1 Gate characteristics

Fig.3 Dependence of I

TCM

on C

Fig.2 Maximum (limit) on-state characteristics

S

Fig.4 Maximum (limit) transient thermal resistance

Fig.5 Surge (non-repetitive) on-state current vs time

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DGT304SE13

Fig.6 Steady state rectangulerwave conduction loss - double side cooled

Fig.7 Steady state sinusoidal wave conduction loss - double side cooled

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DGT304SE13

Fig.8 Turn-on energy vs on-state current

Fig.10 Turn-on energy vs on-state current

Fig.9 Turn-on energy vs peak forward gate current

Fig.11 Turn-on energy vs peak forward gate current

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DGT304SE13

Fig.12 Turn-on energy vs rate of rise of on-state current

Fig.14 Delay time and rise time vs peak forward gate current

Fig.13 Delay time and rise time vs on-state current

Fig.15 Turn-off energy vs on-state current

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DGT304SE13

Fig.16 Turn-off energy vs rate of rise of reverse gate current

Fig.17 Turn-off energy vs on-state current

Fig.18 Turn-off energy vs rate of rise of reverse gate current Fig.19 Turn-off energy vs on-state current with CS as parameter

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DGT304SE13

Fig.20 Storage time vs on-state current

Fig.22 Fall time vs on-state current

Fig.21 Storage time vs rate of rise of reverse gate current

Fig.23 Fall time vs rate of rise of reverse gate current

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DGT304SE13

Fig.24 Peak reverse gate current vs on-state current

Fig.26 Turn-off gate charge vs on-state current

Fig.25 Peak reverse gate current vs rate of rise of reverse

gate current

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Fig.27 Turn-off gate charge vs rate of rise of reverse

gate current

DGT304SE13

Fig.28 Dependence of critical dVD/dt on gate-cathode

resistance and gate-cathode reverse voltage

0.9V

D

V

D

Anode voltage and current

t

t

d

r

t

gt

dIFG/dt

0.1I

FG

Gate voltage and current

I

FG

V

FG

t

w1

0.1V

I

T

0.1I

0.5I

GQ

Q

GQ

GQM

I

GQM

V

D

DP

t

gs

t

gq

I

G(ON)

0.9I

t

gf

T

dVD/dt

I

TAIL

V

(RG)BR

Recommended gate conditions:-

I

= 700A

TCM

I

= 20A

FG

dI

/dt = 20A/µs

FG

I

= 2A d.c.

G(ON)

t

= 4.5µs

DM

w1(min)

I

= 120A

GQM

dI

/dt = 15A/µs

GQ

Q

= 700µc

GQ

V

RG(min)

V

RG(max)

= 2V

= 16V

V

V

D

These are recommended Dynex Semiconductor
conditions. Other conditions are permitted
according to users gate drive specifications.

V

RG

Fig.29 General switching waveforms

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DGT304SE13

PACKAGE DETAILS

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated
otherwise. DO NOT SCALE.

2 holes Ø3.6 ± 0.1 x 2.0 ± 0.1 deep
(One in each electrode)

15˚

30˚

Cathode tab

Cathode

Ø42max

Ø25nom.

Gate

14

Ø25nom.

Nominal weight: 82g

Clamping force: 6kN ±10%

Package outine type code: E

Anode

ASSOCIATED PUBLICATIONS

Title Application Note

Number

Calculating the junction temperature or power semiconductors AN4506
GTO gate drive units AN4571
Recommendations for clamping power semiconductors AN4839
Use of VTO, rT on-state characteristic AN5001
Impoved gate drive for GTO series connections AN5177

15

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DGT304SE13

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc­tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.

Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).

DEVICE CLAMPS

Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre­loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm

Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839

HEATSINKS

Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.

http://www.dynexsemi.com

e-mail: [email protected]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

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© Dynex Semiconductor 2002 Publication No. DS4609-4 Issue No. 2.0 February 2002
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM

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