Datasheet DFM800NXM33-A000 Datasheet (DYNEX)

DFM800NXM33-A000

DFM800NXM33-A000

Fast Recovery Diode Module

Preliminary Information

DS5473-1.3 October 2001

FEATURES

■ Low Reverse Recovery Charge

■ High Switching Speed

■ Low Forward Voltage Drop

■ Isolated Base

■ Dual Diodes Can Be Paralleled for 1600A Rating

■ MMC Baseplate With AlN Substrates

APPLICATIONS

■ Brake Chopper Diode

■ Boost and Buck Converters

■ Free-wheel Circuits

■ Motor Drives

■ Resonant Converters

■ Induction Heating

■ Multi-level Switch Inverters

The DFM800NXM33-A000 is a dual 3300 volt, fast
recovery diode (FRD) module. Designed for low power
loss, the module is suitable for a variety of high voltage
applications in motor drives and power conversion.

Fast switching times and low reverse recovery losses
allow high frequency operation making the device suitable
for the latest drive designs employing pwm and high
frequency switching.

These modules incorporate electrically isolated base
plates and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise grounded
heat sinks for safety.

KEY PARAMETERS
V

RRM

V

F

I

F

I

FM

External connection for single 1600A diode application

(typ) 2.5V
(max) 800A
(max) 1600A

Fig. 1 Circuit diagram

3300V

External connection

C2(K2)C1(K1)

E1(A1) E2(A2)

External connection

E1

E2

C1

C2

ORDERING INFORMATION

Order As:

DFM800NXM33-A000

Note: When ordering, please use the complete part number.

www.dynexsemi.com

Outline type code: N

(See package details for further information)

Fig. 2 Electrical connections - (not to scale)

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DFM800NXM33-A000

ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme

conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

= 25˚C unless stated otherwise

T

case

Symbol

V

RRM

I

F

I

FM

I2t

Pmax

V

isol

Q

pd

Repetitive peak reverse voltage

Forward current (per arm)

Max. forward current

2

t value fuse current rating

I

Maximum power dissipation

Isolation voltage

Partial discharge

Parameter

THERMAL AND MECHANICAL RATINGS

Internal insulation: AlN
Baseplate material: AlSiC
Creepage distance: 33mm
Clearance: 20mm
CTI (Critical Tracking Index): 175

Test Conditions

= 125˚C

T

vj

DC, T

T

V

T

= 70˚C

case

= 115˚C, tp = 1ms

case

= 0, tp = 10ms, Tvj = 125˚C

R

= 25˚C, Tvj = 125˚C

case

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

IEC1287. V

= 2450V, V2 = 1800V, 50Hz RMS

1

Max.

3300

800

1600

320

3845

6

10

Units

V

A

A

2

s

A

W

kV

pC

Symbol

R

th(j-c)

R

th(c-h)

T

j

T

stg

-

2/7

Parameter

Thermal resistance - diode (per arm)

Thermal resistance - case to heatsink

(per module)

Junction temperature

Storage temperature range

Screw torque

Test Conditions

Continuous dissipation -

junction to case

Mounting torque 5Nm

(with mounting grease)

-

-

Mounting - M6

Electrical connections - M8

Min.

–40

Typ.

-

-

-

-

-

Max.

-

-

-

-

-

-

26

6

125

125

5

10

www.dynexsemi.com

Units

˚C/kW

˚C/kW

˚C

˚C

Nm

Nm

STATIC ELECTRICAL CHARACTERISTICS - PER ARM

Tvj = 25˚C unless stated otherwise.

DFM800NXM33-A000

Symbol

I

RM

V

F

L

Parameter

Peak reverse current

Forward voltage

Inductance

= 3300V, Tvj = 125˚C

V

R

= 800A

I

F

= 800A, Tvj = 125˚C

I

F

Test Conditions

DYNAMIC ELECTRICAL CHARACTERISTICS - PER ARM

Tvj = 25˚C unless stated otherwise.

Symbol

I

rr

Q

rr

E

rec

Parameter

Peak reverse recovery current

Reverse recovery charge

Reverse recovery energy

Test Conditions

/dt = 4400A/µs,

dI

F

= 800A,

I

F

= 1800V

V

R

Min.

-

Min.

Typ.

-

-

-

-

2.5

2.5

25

Typ.

650

-

450

-

500

-

Max.

-

Max.

60

Units

mA

-

-

-

V

V

nH

Units

-

-

-

A

µC

mJ

Tvj = 125˚C unless stated otherwise.

Symbol

I

rr

Q

rr

E

rec

Peak reverse recovery current

Reverse recovery charge

Reverse recovery energy

Parameter

Test Conditions

I

= 800A,

F

/dt = 3000A/µs,

dI

F

= 1800V

V

R

Min.

-

-

-

Typ.

670

670

850

Max.

-

-

-

Units

A

µC

mJ

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DFM800NXM33-A000

TYPICAL CHARACTERISTICS

1600

Tj = 25˚C

= 125˚C

T

1400

j

1200

1000

- (A)

F

800

600

Forward current, I

400

200

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

Forward voltage, V

- (V)

F

Fig. 2 Diode typical forward characteristics

100

- (°C/kW )

10

th (j-c)

1

Transient thermal impedance, Z

Diode Ri (˚C/KW)

0.1

τ

(ms)

i

0.001 0.01 10.1
Pulse width, t

Fig. 4 Transient thermal impedance

1

0.7386

0.0843

- (s)

p

2

3.9115

3.7205

3

5.5628

33.2138

Diode

4

16.8308

236.5275

10

4000

3600

3200

2800

(W)

tot

2400

2000

1600

Power Dissipation - P

1200

800

400

0 25 50 75 100 125 150

Case temperature, T

case

- (°C)

Fig. 5 Power dissipation Fig. 6DC current rating vs case temperature

1400

1200

1000

- (A)

F

800

600

DC forward current, I

400

200

0

0 25 50 75 100 125 150

Case temperature, T

case

- (°C)

4/7

www.dynexsemi.com

1400

Tj = 125˚C

1200

1000

- (A)

rr

800

600

400

Reverse recovery current, I

DFM800NXM33-A000

200

0

0 500 1000 1500 2000 2500 3000 3500

Reverse voltage, V

- (V)

R

Fig. 7 RBSOA

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DFM800NXM33-A000

PACKAGE DETAILS

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.

62

E1

E2

20

20

20

C1

C2

62

4x M8

57

43.5 18
57

6x Ø7

65

65

6/7

38

31.5

5

140

Nominal weight: 1000g

Module outline type code: N

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DFM800NXM33-A000

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and
current capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.

Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).

HEATSINKS

The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.

http://www.dynexsemi.com

e-mail: [e-mail]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

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All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS5473-1 Issue No. 1.3 October 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

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