Datasheet DF75225, DF75224, DF75222, DF75220 Datasheet (DYNEX)

DF752

DF752

Fast Recovery Diode

Replaces March 1998 version, DS4212-3.4 DS4548 - 3.2 January 2000

APPLICATIONS

■ Induction Heating

■ A.C. Motor Drives

■ Inverters And Choppers

■ Welding

■ High Frequency Rectification

■ UPS

FEATURES

■ Double Side Cooling

■ High Surge Capability

■ Low Recovery Charge

VOLTAGE RATINGS

Type Number Repetitive Peak

Reverse Voltage

V

RRM

V

DF752 25
DF752 24
DF752 22
DF752 20

2500
2400
2200
2000

Conditions

= V

V

RSM

RRM

+ 100V

KEY PARAMETERS

V
I

F(AV)

I

FSM

Q
t

rr

RRM

r

2500V

1050A

12000A
1000µC

6.0µs

Lower voltage grades available.

See Package Details for further information.

CURRENT RATINGS

Symbol Parameter Conditions

Double Side Cooled

I

F(AV)

I

F(RMS)

I

F

Mean forward current

RMS value

Continuous (direct) forward current

Single Side Cooled (Anode side)

I

F(AV)

I

F(RMS)

I

F

Mean forward current

RMS value

Continuous (direct) forward current

Half wave resistive load, T

= 65oC 1660 A

T

case

T

= 65oC 1500 A

case

Half wave resistive load, T

T

= 65oC 1078 A

case

T

= 65oC 933 A

case

Outline type code: M779b.

= 65oC 1050 A

case

= 65oC 686 A

case

UnitsMax.

1/7

DF752

SURGE RATINGS

ParameterSymbol

FSM

FSM

Surge (non-repetitive) forward currentI

Surge (non-repetitive) forward currentI

THERMAL AND MECHANICAL DATA

Symbol

R

th(j-c)

R

th(c-h)

Thermal resistance - junction to case

Thermal resistance - case to heatsink

Parameter

Conditions

10ms half sine; with 0% V

10ms half sine; with 50% V

Conditions Max. Units

Double side cooled

Single side cooled

Clamping force 15kN
with mounting compound

= 150oC

RRM, Tj

= 150oC

RRM, Tj

Min.

dc

- 0.036

Cathode dc - 0.076
Double side

Single side

-

- 0.02oC/W

Max. Units

12.0 kA

720 x 10

3

9.6 kA

460 x 10

3

0.01

A2sI2t for fusingI2t

A2sI2t for fusingI2t

o

C/W

o

C/W- 0.069Anode dc

o

C/W

o

C/W

T

T

stg

Virtual junction temperature

vj

Storage temperature range

On-state (conducting) - 150

-55 175

16.513.5Clamping force-

CHARACTERISTICS

Symbol Typ. Units

V

FM

I

RRM

t

rr

Q

RA1

I

RM

Forward voltage

Peak reverse current
Reverse recovery time

Recovered charge (50% chord)
Reverse recovery current

K Soft factor

V

TO

Threshold voltage

Parameter

Conditions Max.

At 2000A peak, T
At V

, T

RRM

= 150oC-mA

case

= 25oC - 1.8 V

case

60

- 6.0

= 1000A, diRR/dt = 100A/µs

I

F

T

= 150oC, VR = 100V

case

- 1000 µC

- 330 A

---

At Tvj = 150oC - 0.9 V

o

o

kN

µs

C
C

2/7

r

T

V

FRM

Slope resistance

At Tvj = 150oC - 0.45 mΩ

Forward recovery voltage di/dt = 1000A/µs, Tj = 125oC--V

DF752

DEFINITION OF K FACTOR AND Q

Q

= 0.5x IRR(t1 + t2)

RA1

dIR/dt

0.5x I

t

1

RR

I

RR

k = t

t

2

1/t2

CURVES

5000

4000

- (A)

F

3000

RA1

τ

Measured under pulse
conditions

Tj = 25˚C

Tj = 150˚C

2000

Instantaneuos forward current I

1000

0

0

Instantaneous forward voltage V

1.0

2.0 3.0

F

Fig.1 Maximum (limit) forward characteristics

- (V)

3/7

DF752

500

Measured under pulse conditions

400

- (A)

F

Tj = 150˚C

300

200

Instantaneous forward current I

100

Tj = 25˚C

4/7

0

0.8 0.9 1.0 1.1 1.2
Instantaneous forward voltage V

Fig.2 Maximum (limit) forward characteristics

100000

I

F

tp = 1ms

- (µC)

10000

S

dIR/dt

1000

Reverse recovered charge Q

100

1 10 100 1000

Rate of rise of reverse current dI

50µs

QS =

∫

0

Q

S

I

RR

E

Fig.3 Recovered charge

- (V)

F

D

/dt - (A/µs)

R

Conditions:

= 150˚C,

T

j

= 100V

V

R

A
B
C

A: IF = 2000A

= 1000A

B: I

F

= 500A

C: I

F

= 200A

D: I

F

= 100A

E: I

F

1000

- (A)

RR

Conditions:

= 150˚C,

T

j

= 100V

V

R

D

A
B
C

E

100

A: IF = 2000A

= 1000A

B: I

F

= 500A

C: I

Reverse recovery current I

10

1 10 100 1000

Rate of rise of reverse current dI

/dt - (A/µs)

R

D: I
E: I

F

= 200A

F

= 100A

F

Fig.4 Typical reverse recovery current vs rate of rise of reverse current

DF752

0.100

0.010

Thermal impedance - (˚C/W)

0.001

0.01

Fig.5 Maximum (limit) transient thermal impedance - junction to case - ˚C/W

d.c. Double side cooled

0.1 1 10 100
Time - (s)

5/7

DF752

PACKAGE DETAILS

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.

2 holes Ø3.6x2.0 deep (in both electrodes)

Cathode

Ø58.5 max

Ø34 nom

Ø34 nom

Nominal weight: 310g

Clamping force: 12kN ±10%

Package outine type code: M779b

Anode

ASSOCIATED PUBLICATIONS

Title Application Note

Number

Calculating the junction temperature or power semiconductors AN4506
Recommendations for clamping power semiconductors AN4839
Thyristor and diode measurement with a multi-meter AN4853
Use of V

, rT on-state characteristic AN5001

TO

27.0

25.4

6/7

DF752

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc­tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.

Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).

DEVICE CLAMPS

Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre­loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm

Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839

HEATSINKS

Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.

http://www.dynexsemi.com

e-mail: [email protected]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

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a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
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© Dynex Semiconductor 2000 Publication No. DS4212-4 Issue No. 4.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

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