Datasheet DF68545, DF68544, DF68543, DF68542, DF68541 Datasheet (DYNEX)

DF685

DF685

Fast Recovery Diode

Replaces March 1998 version, DS4303-1.3 DS4303-2.0 January 2000

APPLICATIONS

■ Snubber Diode For GTO Applications

FEATURES

■ Double Side Cooling

■ High Surge Capability

■ Low Recovery Charge

VOLTAGE RATINGS

Type Number Repetitive Peak

Reverse Voltage

V

RRM

V

DF685 45
DF685 44
DF685 43
DF685 42
DF685 41
DF685 40

4500
4400
4300
4200
4100
4000

V

Lower voltage grades available.

CURRENT RATINGS

Conditions

= V

RSM

RRM

+ 100V

KEY PARAMETERS

V

RRM

I

F(AV)

I

FSM

Q

r

t

rr

Outline type code: M779b.

See Package Details for further information.

4500V

445A

4500A
650µC

5µs

Symbol Parameter Conditions

Double Side Cooled

I

F(AV)

I

F(RMS)

I

Mean forward current

RMS value

F

Continuous (direct) forward current

Half wave resistive load, T

= 65oC 700 A

T

case

T

= 65oC 610 A

case

Single Side Cooled (Anode side)

I

F(AV)

I

F(RMS)

I

F

Mean forward current

RMS value

Continuous (direct) forward current

Half wave resistive load, T

T

= 65oC 440 A

case

T

= 65oC 365 A

case

= 65oC 445 A

case

= 65oC 280 A

case

UnitsMax.

1/8

DF685

SURGE RATINGS

ParameterSymbol

FSM

FSM

FSM

Surge (non-repetitive) forward currentI

Surge (non-repetitive) forward currentI

Surge (non-repetitive) forward currentI

2

t for fusingI2t

THERMAL AND MECHANICAL DATA

Symbol

R

th(j-c)

R

th(c-h)

Thermal resistance - junction to case

Thermal resistance - case to heatsink

Parameter

Conditions

Max. Units

4.5 kA

10ms half sine; with 0% V

RRM, Tj

= 150oC

101.25x10

3.6 kA

10ms half sine; with 50% V

RRM, Tj

= 150oC

64.8x10

-kA

10ms half sine; with 100% V

RRM, Tj

= 150oC

-A

Conditions Max. Units

Double side cooled - 0.045

dc

Min.

Single side cooled

- 0.095

0.01

-

- 0.02

Clamping force 10kN
with mounting compound

Cathode dc
Double side

Single side

3

A2sI2t for fusingI2t

3

A2sI2t for fusingI2t

2

sI

o

C/W

o

C/W- 0.086Anode dc

o

C/W

o

C/W

o

C/W

T

T

stg

Virtual junction temperature

vj

Storage temperature range

On-state (conducting) - 150

-55 150

11.09.0Clamping force-

CHARACTERISTICS

Symbol Typ. Units

V

FM

I

RRM

t

rr

Q

RA1

I

RM

K

V

TO

r

T

Forward voltage

Peak reverse current
Reverse recovery time

Recovered charge (50% chord)
Reverse recovery current

Soft factor

Threshold voltage

Slope resistance

Parameter

Conditions Max.

At 1500A peak, T
At V

, T

RRM

= 150oC-mA

case

= 25oC - 4.8 V

case

80

5-

IF = 1000A, diRR/dt = 100A/µs
T

= 150oC, VR = 100V

case

- 650 µC

270 - A

1.8 - -

At Tvj = 150oC - 2.0 V

At Tvj = 150oC - 1.76 mΩ

o

C

o

C

kN

µs

2/8

V

FRM

Forward recovery voltage di/dt = 1000A/µs, Tj = 125oC - 220 V

DF685

DEFINITION OF K FACTOR AND Q

Q

= 0.5x IRR(t1 + t2)

RA1

dIR/dt

0.5x I

t

1

RR

I

RR

k = t

t

2

1/t2

CURVES

3000

2500

- (A)

F

Measured under pulse conditions

RA1

τ

Tj = 150˚C

Tj = 25˚C

2000

1500

Instantaneous forward current I

1000

500

0 2.0 4.0 6.0 8.0

Instantaneous forward voltage V

- (V)

F

Fig. 1 Maximum (limit) forward characteristics

3/8

DF685

500

400

- (A)

F

300

Measured under pulse conditions

500

400

- (V)

FP

300

Tj = 150˚C

Tj = 25˚C

200

Instantaneous forward current I

100

0

1.0 1.5 2.0 2.5 3.0
Instantaneous forward voltage V

- (V)

F

Fig. 2 Maximum (limit) forward characteristics

Current
waveform

V

FR

Voltage
waveform

δy

di = δy
dt δx

δx

Tj = 125˚C limit

4/8

200

Transient forward votage V

100

0

0 500 1000 1500 2000

Rate of rise of forward current dI

Fig. 3 Transient forward voltage vs rate of rise of forward current

/dt - (A/µs)

F

Tj = 25˚C limit

2500

DF685

100000

I

F

tp = 1ms

- (µC)

10000

S

dIR/dt

1000

Reverse recovered charge Q

100

1 10 100 1000

Rate of rise of reverse current dI

50µs

QS =

∫

0

Q

S

I

RR

IF = 100A

Fig. 4 Recovered charge

/dt - (A/µs)

R

Conditions:

= 150˚C,

T

j

= 100V

V

R

IF = 4000A
I

= 2000A

F

I

= 1000A

F

I

= 500AIF = 200A

F

10000

Conditions:

= 150˚C,

T

j

= 100V

V

R

- (A)

1000

RR

IF = 4000A
I

= 2000A

F

I

= 1000A

F

I

= 500A

F

IF = 200A

IF = 100A

100

Reverse recovery current I

10

1 10 100 1000

Rate of rise of reverse current dI

/dt - (A/µs)

R

Fig. 5 Typical reverse recovery current vs rate of rise of reverse current

5/8

DF685

0.100

d.c. Double side cooled

0.010

Thermal impedance - (˚C/W)

0.001

0.01

Fig. 6 Maximum (limit) transient thermal impedance - junction to case - (˚C/W)

0.1 1 10 100
Time - (s)

6/8

DF685

PACKAGE DETAILS

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.

2 holes Ø3.6x2.0 deep (in both electrodes)

Cathode

Ø58.5 max

Ø34 nom

Ø34 nom

Nominal weight: 310g

Clamping force: 12kN ±10%

Package outine type code: M779b

Anode

ASSOCIATED PUBLICATIONS

Title Application Note

Number

Calculating the junction temperature or power semiconductors AN4506
Recommendations for clamping power semiconductors AN4839
Thyristor and diode measurement with a multi-meter AN4853
Use of V

, rT on-state characteristic AN5001

TO

27.0

25.4

7/8

DF685

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc­tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.

Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).

DEVICE CLAMPS

Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre­loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm

Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839

HEATSINKS

Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.

http://www.dynexsemi.com

e-mail: [e-mail]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

T arget Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

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a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
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8/8

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© Dynex Semiconductor 2000 Publication No. DS4303-2 Issue No. 2.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM