Datasheet DF45116, DF45114, DF45112, DF45110, DF45108 Datasheet (DYNEX)

DF451

DF451

Fast Recovery Diode

Replaces March 1999 version, DS4142-4.0 DS4143-5.0 January 2000

FEATURES

■ Double Side Cooling

■ High Surge Capability

■ Low Recovery Charge

Applications

■ Induction Heating

■ A.C. Motor Drives

■ Inverters And Choppers

■ Welding

■ High Frequency Rectification

■ UPS

Voltage Ratings

Type Number Repetitive Peak

Reverse Voltage

V

RRM

V

DF451 16
DF451 14
DF451 12
DF451 10
DF451 08
DF451 06

1600
1400
1200
1000

800
600

Conditions

= V

V

RSM

RRM

+ 100V

KEY PARAMETERS

V

RRM

I

F(AV)

I

FSM

Q

r

t

rr

Outline type code: M771.

See Package Details for further information.

1600V

295A

3500A

25µC

1.22µs

CURRENT RATINGS

Symbol Parameter Conditions

Double Side Cooled

I

F(AV)

I

F(RMS)

I

F

Mean forward current

RMS value

Continuous (direct) forward current

Single Side Cooled (Anode side)

I

F(AV)

I

F(RMS)

I

F

Mean forward current

RMS value

Continuous (direct) forward current

Half wave resistive load, T

= 65oC 543 A

T

case

T

= 65oC 391 A

case

Half wave resistive load, T

T

= 65oC 348 A

case

T

= 65oC 285 A

case

= 65oC 295 A

case

= 65oC 220 A

case

UnitsMax.

1/8

DF451

SURGE RATINGS

ParameterSymbol

FSM

FSM

Surge (non-repetitive) forward currentI

Surge (non-repetitive) forward currentI

THERMAL AND MECHANICAL DATA

Symbol

R

th(j-c)

R

th(c-h)

Thermal resistance - junction to case

Thermal resistance - case to heatsink

Parameter

Conditions

10ms half sine; with 0% V

10ms half sine; with 50% V

Conditions Max. Units

Double side cooled

Single side cooled

Clamping force 5.0kN
with mounting compound

= 150oC

RRM, Tj

= 150oC

RRM, Tj

dc
Anode dc
Cathode dc

Double side
Single side

Max. Units

3.5 kA

61.25 x 103A2sI2t for fusingI2t

2.8 kA

39.2 x 103A2sI2t for fusingI2t

-

- 0.07

o

C/W

o

C/W- 0.133

- 0.147oC/W

0.02

-

o

C/W

- 0.02oC/W

T

T

stg

Virtual junction temperature

vj

Storage temperature range –55 150

Forward (conducting) - 150

5.54.5Clamping force-

CHARACTERISTICS

Symbol Typ. Units

V

FM

I

RRM

t

rr

Q

RA1

I

RM

K

V

TO

Forward voltage

Peak reverse current
Reverse recovery time

Recovered charge (50% chord)
Reverse recovery current

Soft factor

Threshold voltage

Parameter

Conditions Max.

At 600A peak, T
At V

, T

RRM

case

= 500A, diRR/dt = -80A/µs

I

F

T

= 125oC, VR = 100V

case

= 25oC - 2.65 V

case

= 125oC-mA

1.22

100

-

-25µC

-40A

1.7 - -

At Tvj = 125oC - 1.6 V

o

o

kN

µs

C
C

2/8

r

T

V

FRM

Slope resistance

At Tvj = 125oC - 1.5 mΩ

Forward recovery voltage di/dt = 1000A/µs, Tj = 125oC-40V

DF451

DEFINITION OF K FACTOR AND Q

CURVES

3000

2500

- (A)

F

Measured under pulse conditions

RA1

dIR/dt

0.5x I

Q

= 0.5x IRR(t1 + t2)

RA1

k = t

t

t

1

2

RR

I

RR

1/t2

τ

2000

Tj = 150˚C

1500

Instantaneous forward current, I

1000

500

2.0 3.0 4.0 5.0 6.0
Instantaneous forward voltage, V

Tj = 25˚C

- (V)

F

Fig.1 Maximum (limit) forward characteristics

3/8

DF451

500

400

- (A)

F

300

200

Instantaneous forward current, I

100

Measured under pulse conditions

Tj = 150˚C

Tj = 25˚C

0

1.25 1.5 1.75 2.0 2.25
Instantaneous forward voltage, V

- (V)

F

Fig.2 Maximum (limit) forward characteristics

4/8

DF451

1000

I

F

QS =

∫

50µs
0

Conditions:

= 125˚C,

T

j

V

Q

S

R

tp = 1ms

dIR/dt

- (µC)

S

100

I

RR

IF = 2000A
I

F

I

F

IF = 200A

IF = 100A

10

Reverse recovered charge Q

1

1 10 100 1000

Rate of rise of reverse current, dI

/dt - (A/µs)

R

Fig.3 Recovered charge

= 100V

= 1000A
= 500A

1000

Conditions:

= 125˚C,

T

j

V

= 100V

R

IF = 2000A

= 1000A

I

- (A)

100

RR

F

I

= 500A

F

IF = 100A

10

Reverse recovery current, I

1

1 10 100 1000

Rate of rise of reverse current, dI

/dt - (A/µs)

R

Fig.4 Typical reverse recovery current vs rate of rise of forward current

5/8

DF451

0.1

d.c. Double side cooled

0.01

Thermal impedance - (˚C/W)

0.001
Time - (s)

1001010.10.01

Fig.5 Maximum (limit) transient thermal impedance - junction to case - (˚C/W)

PACKAGE DETAILS

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.

2 holes Ø3.6 x 2.0 deep
(One in each electrode)

Cathode

Ø42 max
Ø19 nom

6/8

15.0

14.0

Ø19 nom

Nominal weight: 50g

Clamping force: 5kN ±10%

Package outine type code: M771

Anode

DF451

ASSOCIATED PUBLICATIONS

Title Application Note

Number

Calculating the junction temperature or power semiconductors AN4506
Recommendations for clamping power semiconductors AN4839
Thyristor and diode measurement with a multi-meter AN4853
Use of V

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc­tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.

Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).

DEVICE CLAMPS

, rT on-state characteristic AN5001

TO

Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre­loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm

Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839

HEATSINKS

Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.

7/8

DF451

http://www.dynexsemi.com

e-mail: [e-mail]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

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a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

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All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

8/8

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© Dynex Semiconductor 2000 Publication No. DS4143-5 Issue No. 5.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM