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Directed Energy, Inc.
An
♦
♦
♦
♦
♦
IXYS
N-Channel Enhancement Mode
Low Qg and Rg
High dv/dt
Nanosecond Switching
30MHz Maximum Frequency
Company
DE475-102N21A
RF Power MOSFET
Preliminary Data Sheet
V
= 1000 V
DSS
I
= 21 A
D25
R
DS(on)
=
0.52 ΩΩΩΩ
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
DHS
P
DAMB
T
J
T
JM
T
stg
T
L
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; R
Continuous
Transient
Tc = 25°C
Tc = 25°C, pulse width limited by TJM
Tc = 25°C
Tc = 25°C
I
≤ IDM, di/dt ≤ 100A/µs, VDD ≤ V
S
≤ 150°C, RG = 0.2Ω
T
j
IS = 0
Tc = 25°C
Derate 4.4W/°C above 25°C
Tc = 25°C
1.6mm (0.063 in) from case for 10 s
= 1 MΩ
GS
DSS
,
3 g
1000 V
1000 V
±20 V
±30 V
21 A
126 A
21 A
30 mJ
5 V/ns
>200 V/ns
600 W
4.5 W
-55…+150 °C
150 °C
-55…+150 °C
300 °C
Symbol Test Conditions Characteristic Values
T
= 25°C unless otherwise specified
J
V
V
I
GSS
I
DSS
R
g
DSS
GS(th)
DS(on)
fs
VGS = 0 V, ID = 3 ma
VDS = VGS, ID = 4 ma
VGS = ±20 VDC, VDS = 0
VDS = 0.8 V
V
GS
VGS = 15 V, ID = 0.5I
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
VDS = 15 V, ID = 0.5I
DSS TJ
= 0 TJ = 125°C
= 25°C
D25
, pulse test
D25
min. typ. max.
1000 V
2.5 5.5 V
±100 nA
50
0.52
22 S
1
µA
mA
Ω
GATE
SG1 SG2
Features
P
DHS
= 600W
SD1 SD2
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced low Q
process
g
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low R
DS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other haz-
ardous materials
Advantages
• Optimized for RF and high speed
switching at frequencies to 30MHz
• Easy to mount—no insulators needed
• High power density
DRAIN
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Directed Energy, Inc.
An
IXYS
Symbol Test Conditions Characteristic Value s
Company
T
= 25°C unless otherwise specified)
(
J
min. typ. max.
DE475-102N21A
RF Power MOSFET
R
C
C
C
T
T
T
T
Q
Q
Q
R
G
iss
oss
rss
d(on)
on
d(off)
off
g(on)
gs
gd
thJHS
5500 pF
VGS = 0 V, VDS = 0.8 V
f = 1 MHz
VGS = 15 V, VDS = 0.8 V
ID = 0.5 IDM
= 0.2 Ω (External)
R
G
VGS = 10 V, VDS = 0.5 V
ID = 0.5 I
D25
DSS(max)
DSS
DSS
,
640 pF
190 pF
5 ns
5 ns
5 ns
8 ns
160 nC
35 nC
77 nC
0.20 K/W
0.3
Ω
Source-Drain Diode Characteristic Values
T
= 25°C unless otherwise specified)
(
J
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
T
rr
Q
RM
I
RM
VGS = 0 V
Repetitive; pulse width limited by T
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2%
IF = I
, -di/dt = 100A/µs,
S
= 100V
V
R
JM
8 A
21 A
126 A
1.5 V
200 ns
0.6
For detailed device mounting and installation instructions, see the “DE-
Series MOSFET Mountin g In str uc tions ” technical note on DEI’s web site at
www.directedenergy.com/apptech.htm
Directed Energy, Inc. reserves the right to change limits, test conditions and dimensions.
DEI MOSFETS are covered by one or more of the following U.S. patents:
4,835,592 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508
5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715
5,381,025 5,640,045
µC
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Directed Energy, Inc.
An
IXYS
102N21A DE-SERIES SPICE Model
Company
(Preliminary)
DE475-102N21A
RF Power MOSFET
The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms
, LS and LD. Rd is the R
L
G
The output capacitance, C
of the device, Rds is the resistive leakage term.
DS(ON)
, and reverse transfer capacitance, C
OSS
RSS
are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are
adjusted via Ron and Roff.
Figure 1 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the DEI web site at
www.directedenergy.com/spice.htm
Net List:
.SUBCKT 102N21A 10 20 30
* TERMINALS: D G S
* 1000 Volt 21 Amp 0.52 ohm N-Channel Power MOSFET
* REV.A 01-09-02
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 0.3
DON 6 2 D1
ROF 5 7 .1
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 5.5N
RD 4 1 0.5
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .5N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=3.8)
.MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N)
.MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.4 VJ=.6 TT=400N RS=10M)
.MODEL D3 D (IS=.5F CJO=900P BV=1000 M=.3 VJ=.4 TT=400N RS=10M)
.ENDS
Doc #9200-0247 Rev 1
© 2002 Directed Energy, Inc.
Directed Energy, Inc.
An
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Email: [email protected]
Web: http://www.directedenergy.com
IXYS Company
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