Page 1
Features
· Epitaxial Planar Die Construction
TCUDORPWEN
· Complementary NPN Types Available
(DDTC)
· Built-In Biasing Resistor, R2 only
Mechanical Data
· Case: SOT-523, Molded Plastic
· Case material - UL Flammability Rating 94V-0
· Moisture sensitivity: Level 1 per J-STD-020A
· Terminals: Solderable per MIL-STD-202,
Method 208
· Terminal Connections: See Diagram
· Marking: Date Code and Marking Code
(See Diagrams & Page 2)
· Weight: 0.002 grams (approx.)
· Ordering Information (See Page 2)
P/N R2 (NOM) MARKING
DDTA114GE
DDTA124GE
DDTA144GE
DDTA115GE
10KW
22KW
47KW
100KW
P26
P27
P28
P29
DDTA (R2-ONLY SERIES) E
PNP PRE-BIASED SMALL SIGNAL SOT-523
SURFACE MOUNT TRANSISTOR
A
C
C
TOP VIEW
B
G
H
K
J
B
E
N
D
L
M
C
B
R
2
E
SCHEMATIC DIAGRAM
SOT-523
Dim Min Max Typ
A
0.15 0.30 0.22
B
0.75 0.85 0.80
C
1.45 1.75 1.60
D
¾¾0.50
G
0.90 1.10 1.00
H
1.50 1.70 1.60
J
0.00 0.10 0.05
K
0.60 0.80 0.75
L
0.10 0.30 0.22
M
0.10 0.20 0.12
N
0.45 0.65 0.50
a
0° 8°¾
All Dimensions in mm
Maximum Ratings
Characteristic Symbol Value Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage and Temperature Range
Note: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
@ TA= 25°C unless otherwise specified
V
CBO
V
CEO
V
EBO
IC (Max)
P
d
R
qJA
Tj,T
STG
-50 V
-50 V
-5 V
-100 mA
150
833 °C/W
-55 to +150 °C
mW
DS30320 Rev. 2 - 2 1 of 3 DDTA (R2-ONLY SERIES) E
Page 2
Electrical Characteristics
@ TA= 25°C unless otherwise specified
TCUDORPWEN
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Bleeder Resistor (R2) Tolerance
Gain-Bandwidth Product*
* Transistor - For Reference Only
Ordering Information
DDTA114GE-7
DDTA124GE-7
DDTA144GE-7
DDTA115GE-7
Characteristic Symbol Min Typ Max Unit Test Condition
DDTA114GE
DDTA124GE
DDTA144GE
DDTA115GE
DDTA114GE
DDTA124GE
DDTA144GE
DDTA115GE
BV
BV
BV
I
I
V
CE(sat)
h
DR
CBO
CEO
EBO
CBO
EBO
FE
f
T
-50 ¾¾V
-50 ¾¾V
5 ¾
¾
¾¾-0.5 mA
-300
-140
-65
-30
-580
-260
¾
-130
-58
¾¾-0.3 V
30
56
68
¾¾¾
82
2
-30 ¾ +30 %
¾ 250 ¾ MHz
= -50mA
I
C
IC = -1mA
= -720mA, DDTA114GE
I
E
I
= -330mA, DDTA124GE
E
V
I
= -160mA, DDTA144GE
E
I
= -72mA, DDTA115GE
E
VCB = -50V
VEB = -4V
mA
I
= -10mA, IB = -0.5mA
C
IC = -5mA, VCE = -5V
VCE = -10V, IE = 5mA,
f = 100MHz
¾
(Note 2)
Device
Packaging Shipping
SOT-523 3000/Tape & Reel
SOT-523 3000/Tape & Reel
SOT-523 3000/Tape & Reel
SOT-523 3000/Tape & Reel
Notes: 2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
XXX = Product Type Marking Code (See Page 1, e.g. P26 = DDTA114GE)
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
2007 2008 2009
Aug Sep Oct Nov Dec
89 O ND
Date Code Key
Year 2002 2003 2004 2005 2006
Code
Month Jan Feb March Apr May Jun Jul
Code
XXXYM
NPRST
12345 67
UVW
DS30320 Rev. 2 - 2 2 of 3 DDTA (R2-ONLY SERIES) E
Page 3
10
1000
C
C
C
C
(
)
1
250
TYPICAL CURVES - DDTA114GE
TCUDORPWEN
D
P , POWER DISSIPATION (mW)
1000
200
150
100
50
0
-50
0
T , AMBIENT TEMPERATURE (°C)
A
50
Fig. 1, DeratingCurve
V = 10
CE
75°C
100
150
pF
E
12
10
I/I =10
CB
75°C
25°C
10
20
Fig. 2 V vs. I
CE(SAT)C
30
-25°C
40
50
I=0V
E
CE(SAT)
V , MAXIMUM COLLECTOR VOLTAGE (V)
0.1
0.01
0.001
0
I , COLLECTOR CURRENT (mA)
C
8
6
100
hFE, DC CURRENT GAIN (NORMALIZED)
10
1 10 100
75°C
25°C
-25°C
I , COLLECTOR CURRENT (mA)
C
Fig. 3 DC Current Gain
V = 5V
O
ITAN
APA
,
OB
4
2
0
0
5
10
V , REVERSE BIAS VOLTAGE (V)
R
15
20
25
30
Fig. 4 Output Capacitance
V = 0.2
O
100
75°C
-25°C
25°C
-25°C
25°C
1
10
1
C
I , COLLECTOR CURRENT (mA)
0.1
0.01
in
V , INPUT VOLTAGE (V)
0.001
01 2 3 4
Fig. 5 Collector Current Vs. Input Voltage
67
5
V , INPUT VOLTAGE (V)
in
89
10
0.1
0
200
100
I , COLLECTOR CURRENT (mA)
C
300 400
Fig. 6 Input Voltage vs. Collector Current
500 600 700
DS30320 Rev. 2 - 2 3 of 3 DDTA (R2-ONLY SERIES) E
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