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DD(KD)30GB40/80
DIODE MODULE
Electrical Characteristics
Symbol Item
Ratings
DD30GB40 DD30GB80
Unit
VRRM
Repetitive Peak Reverse Voltage
400 800 V
VRSM
Non-Repetitive Peak Reverse Voltage
480 960 V
Symbol Item
Average Forward Current
Conditions Ratings Unit
AIF AV
Single phase, half wave, 180 conduction, Tc 118
30
IF RMS
R.M.S. Forward Current
Single phase, half wave, 180 conduction, Tc 118
47 A
IFSM Surge Forward Current
1
2
cycle, 50/60HZ, peak value, non-repetitive
550/600
A
I
2
t
I2t Value for one cycle of surge current 1500 A2S
Tj Junction Temperature
40 150
Tstg Storage Temperature
40 125
V
ISO
Isolation Breakdown Voltage R.M.S.
A.C.1minute
Recommended Value 2.5 3.9 25 40
Recommended Value 1.5 2.5 15 25
2500 V
N m
f B
4.7 48
2.7 28
Mass 170 g
Symbol
IRRM
Item
Repetitive Peak Reverse Current, max.
Conditions
at V
DRM
, single phase, half wave. Tj 150
Ratings
10
1.40
Unit
mA
VFM Forward Voltage Drop, max.
Foward current 90A Tj 25 Inst. measurement
V
0.80
Rth j-c
Thermal Impedance, max. Junction to case
/W
Unit a
Mounting
Torque
Mounting
M6
Terminal M5
Power Diode Module DD30GB series are designed for various rectifier circuits.
DD30GB has two diode chips connected in series and the mounting base is elctrically
isolated from elements for simple heatsink construction. Wide voltage rating up to, 800V
is avaiable for various input voltage.
Isolated mounting base
Two elements in a package for simple (single and three phase) bridge
connections
Highly reliable glass passivated chips
High surge current capability
Applications
Various rectifiers, Battery chargers, DC motor drives
UL;E76102
M
Maximum Ratings
Tj 25
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DD(KD)30GB40/80
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