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DD250GB
DIODE MODULE
F.R.D.
Power Diode Module DD250GB series are designed for various rectifier circuits.
DD250GB has two diode chips connected in series in a package and the mounting base is
electrically isolated from elements for simple heatsink construction. Wide voltage rating
up to 800V is available for various input voltage.
Isolated mounting base
Two elements in a package for simple single and three phase bridge
connections
Highly reliable glass passivated chips
High surge current capability
Applications
Various rectifiers, Bettery chargers, DC motor drives
Maximum Ratings
Tj 25
Symbol Symbol
Ratings
DD250GB40
400
480
Unit
VRRM
VRSM
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
DD250GB80
800
960
V
V
Symbol Symbol
Average Forward Current
Conditions Ratings Unit
AIF AV
Single phase, half wave, 180 conduction, Tc 98
250
IF RMS
IFSM
R.M.S. Forward Current
Surge Forward Current
Single phase, half wave, 180 conduction, Tc 98
1
2
cycle, 50/60HZ, peak value, non-repetitive
390
5000/5500
A
A
I
2
t
I2t Value for one cycle of surge current 125000 A2S
Tj
Operating Junction Temperature
40 150
Tstg Storage Temperature
40 125
V
ISO
Isolation Breakdown Voltage R.M.S.
Mounting
Torque
A.C. 1 minute 2500 V
Mounting
M5
Terminal
M8
Mass
Recommended Value 1.5 2.5 15 25
Recommended Value 8.8 10 90 105
2.7 28
11 115
N m
f B
gTypical Value 510
Unit
Electrical Characteristics
Symbol
IRRM
Symbol
Repetitive Peak Reverse Current
Conditions
Tj150 at V
RRM
Unit
mA
VFM Forward Voltage Drop
Tj25 , IFM=750A, Inst. measurement
V
Rth j-c
Thermal Impedance Junction to case
/W
Ratings
Min. Typ. Max.
50
1.45
0.14
UL;E76102 M
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DD250GB
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