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DD200HB
DIODE MODULE
Power Diode Module DD200HB series are designed for various rectifier circuits.
DD200HB has two diode chips connected in series and the mounting base is electrically
isolated from elements for simple heatsink construction. Wide voltage rating up to
1,600V is available for various input voltage.
Isolated mountings base
Two elements in a package for simple single and three phase bridge
connections
Highly reliable glass passivated chips
High Surge current Capability
Applications
Various rectifiers, Bettery charagers, DC motor drives
Maximum Ratings
Tj 25
Symbol Item
Ratings
DD200HB120
1200
1350
Unit
VRRM
VRSM
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
DD200HB160
1600
1700
V
V
Symbol Item
Average Forward Current
Conditions Ratings Unit
AIF AV
Single Phase, half wave, 180 conduction, Tc 96
200
IF RMS
IFSM
R.M.S. Forward Current
Surge Forward Current
Single Phase, half wave, 180 conduction, Tc 96
1
2
cycle, 50/60HZ, peak value, non-repetitive
310
5000/5500
A
A
I
2
t
I2t Value for one cycle of surge current 125000 A2S
Tj
Operating Junction Temperature
40 150
Tstg Storage Temperature
40 125
V
ISO
Isolation Breakdown Voltage R.M.S.
Mounting
Torque
A.C. 1 minute 2500 V
Mounting
M5
Terminal M8
Mass
Recommended Value 1.5 2.5 15 25
Recommended Value 8.8 10 15 25
2.7 28
11 115
N m
f B
gTypical Value 510
Unit
Electrical Characteristics
Symbol
IRRM
Item
Repetitive Peak Reverse Current, max.
Conditions
at V
RRM
. Single phase, half wave, Tj150
Ratings
50
1.40
0.18
Unit
mA
VFM Forward Voltage Drop, max.
Forward current 600A, Tj25 , Inst. measurement
V
Rth j-c
Thermal Impedance, max.
Junctoin to case Per a half module
/W
UL;E76102 M
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DD200HB
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