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DD200GB
DIODE MODULE
Power Diode Module DD200GB series are designed for various rectifier circuits.
DD200GB has two diode two diode chips connecected in series and the mounting base is
electrically isolated from elements for simple heatsink construction. Wide voltage rating
up to 800V is available for various input voltages.
Isolated mounting base
Two elements in a package for simple single and three phase bridge
connections
Highly reliable glass passivated chips
High surge current capability
Applications
Various rectifiers, Battery chargers, DC motor drives
Maximum Ratings
Tj 25
Symbol Item
Ratings
DD200GB40
400
480
Unit
VRRM
VRSM
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
DD200GB80
800
960
V
V
Symbol Item
Average Forward Current
Conditions Ratings Unit
AIF AV
Single phase, half wave, 180 conduction, Tc: 96
200
IF RMS
IFSM
R.M.S. Forward Current
Surge Forward Current
Single phase, half wave, 180 conduction, Tc: 96
1
2
cycle, 50/60HZ, peak value, non-repetitive
310
5000/5500
A
A
I
2
t
I2t Value for one cycle of surge current 125000 A2S
Tj
Operating Junction Temperature
40 150
Tstg Storage Temperature
40 125
V
ISO
Isolation Breakdown Voltage R.M.S.
Mounting
Torque
A.C. 1 minute 2500 V
Mounting
M5
Terminal M8
Mass
Recommended Value 1.5 2.5 15 25
Recommended Value 8.8 10 90 105
2.7 28
11 115
N m
f B
gTypical Value 510
Unit
Electrical Characteristics
Tj 25
Symbol
IRRM
Item
Repetitive Peak Reverse Current, max.
Conditions
at V
RRM
. Single phase, half wave, Tj150
Ratings
50
1.40
0.18
Unit
mA
VFM Forward Voltage Drop, max.
Forward current 600A, Tj25 , Inst measurement
V
Rth j-c
Thermal Impedance, max.
Junction to case Per a half module
/W
UL;E76102 M
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DD200GB
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