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DCR840F
DCR840F
Phase Control Thyristor
Preliminary Information
DS5521-1.1 February 2002
FEATURES
■ Double Side Cooling
■ High Surge Capability
■ Low Turn-on Losses
APPLICATIONS
■ High Power Converters
■ High Voltage Power Supplies
■ DC Motor Control
VOLTAGE RATINGS
Type Number Repetitive Peak
Voltages
V
DRM VRRM
V
DCR840F48
DCR840F46
DCR840F44
DCR840F42
Lower voltage grades available.
4800
4600
4400
4200
Conditions
Tvj = 0˚ to 125˚C,
I
= I
RRM
, V
& V
& V
RRM tp
= 100mA,
= 10ms,
=
RSM
+ 100V
RRM
DRM
V
DRM
V
DSM
V
DRM
respectively
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
DCR840F48
Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.
KEY PARAMETERS
V
DRM
I
T(AV)
I
TSM
dVdt* 1000V/
dI/dt 300A/
*Higher dV/dt selections available
4800V
840A
10,000A
µs
µs
Outline type code: F
See Package Details for further information.
Fig. 1 Package outline
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DCR840F
CURRENT RATINGS
T
= 60˚C unless stated otherwise.
case
Symbol Parameter Conditions
Double Side Cooled
I
T(AV)
I
T(RMS)
I
Mean on-state current
RMS value
T
Continuous (direct) on-state current
Half wave resistive load 840 A
Single Side Cooled (Anode side)
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load 610 A
CURRENT RATINGS
T
= 80˚C unless stated otherwise.
case
Symbol Parameter Conditions
Double Side Cooled
UnitsMax.
- 1320 A
- 1220 A
- 950 A
- 830 A
UnitsMax.
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Single Side Cooled (Anode side)
I
T(AV)
I
T(RMS)
I
T
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load 670 A
- 1050 A
- 940 A
Half wave resistive load 470 A
- 740 A
- 630 A
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SURGE RATINGS
DCR840F
Symbol
I
TSM
2
tI
I
I
TSM
I2t
Surge (non-repetitive) on-state current
2
t for fusing
Surge (non-repetitive) on-state current
2
I
t for fusing 0.78 x 106A2s
Parameter
THERMAL AND MECHANICAL DATA
Symbol
R
th(j-c)
R
th(c-h)
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Parameter
Conditions
10ms half sine; T
VR = 50% V
RRM
10ms half sine; T
VR = 0
Conditions Min. Max. Units
Double side cooled
Single side cooled
Clamping force 19.5kN
with mounting compound
= 125oC
case
- 1/4 sine
= 125oC
case
dc
Cathode dc
Double side
Single side
Max. Units
10 kA
6
0.5 x 10
A2s
12.5 kA
- 0.022oC/W
o
C/W- 0.038Anode dc
o
- 0.052
0.004
-
C/W
o
C/W
- 0.008oC/W
On-state (conducting) - 135
T
vj
T
stg
-
Virtual junction temperature
Storage temperature range
Clamping force
Reverse (blocking)
-
125
–55 125
18.0 22.0 kN
o
C
o
C
o
C
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Page 4
DCR840F
DYNAMIC CHARACTERISTICS
ParameterSymbol Conditions Typ. Max. Units
I
RRM/IDRM
Peak reverse and off-state current At V
RRM/VDRM
dV/dt Maximum linear rate of rise of off-state voltage To 67% V
From 67% V
dI/dt
Rate of rise of on-state current
Gate source 1.5A
tr = 0.5µs. Tj = 125oC.
V
T(TO)
r
T
t
gd
q
I
L
I
H
Threshold voltage At Tvj = 125oC
On-state slope resistance At Tvj = 125oC
V
= 67% V
Delay time
D
Rise time 0.5µs, Tj = 25oC
I
= 1000A, tp = 1ms, Tj = 125˚C,
T
V
= 50V, dIRR/dt = 10A/µs,
RM
VDR = 50% V
Latching current Tj = 25oC, VD = 5V
Holding current Tj = 25oC, R
GATE TRIGGER CHARACTERISTICS AND RATINGS
, T
= 125oC
case
= 125oC.
DRM Tj
to 1000A
DRM
, Gate source 30V, 15Ω
DRM
, dVDR/dt = 20V/µs linear
DRM
= ∞
g-k
Repetitive 50Hz
Non-repetitive
- 100 mA
- 1000 V/µs
- 150 A/µs
- 300 A/µs
1.3-V
- 0.92 mΩ
- 1.8 µs
µs-600Turn-off timet
- 1000 mA
- 500 mA
P
V
V
V
V
I
V
I
FGM
P
G(AV)
GT
GT
GD
FGM
FGN
RGM
GM
ConditionsParameterSymbol
Gate trigger voltage V
Gate trigger current
Gate non-trigger voltage At 67% V
V
DRM
DRM
= 5V, T
= 5V, T
DRM Tcase
= 25oC
case
case
= 25oC
= 125oC
Peak forward gate voltage Anode positive with respect to cathode
Peak forward gate voltage Anode negative with respect to cathode
Peak reverse gate voltage
Peak forward gate current Anode positive with respect to cathode
Peak gate power See table, gate characteristics curve
Mean gate power
Max. Units
3.5 V
200 mA
0.25 V
30 V
0.25 V
5V
30 A
150 W
10 W
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CURVES
DCR840F
3000
= 125˚C
T
j
2800
2600
2400
2200
- (A)
T
2000
1800
1600
1400
1200
1000
800
Instantaneous on-state current, I
600
400
200
0
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 4.2
Maximum
Minimum
Instantaneous on-state voltage, V
- (V)
T
2500
2000
1500
1000
Mean power dissipation - (W)
500
dc
1/2 wave
3 phase
6 phase
0
0 100 200 300 400 500 600 700 800 900 1000
Mean on-state current, I
Fig.2 Maximum (limit) on-state characteristics Fig.3 Dissipation curves
T(AV)
- (A)
VTM Equation:V
= A + Bln (IT) + C.IT+D.√I
TM
T
Where A = 6.698580464
B = –1.571103736
C = –0.001210868
D = 0.239948957
these values are valid for T
= 125˚C for IT 300A to 3000A
j
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DCR840F
10000
Maximum
Minimum
- (µC)
rr
1000
Reverse recovery charge, Q
100
1 10 100
Rate of rise of on-state current, dI/dt - (A/µs)
Fig.4 Recovered charge Fig.5 Reverse recovery current
1000
Maximum
Minimum
- (A)
rr
100
Reverse recovery current, I
10
1 10 100
Rate of rise of on-state current, dI/dt - (A/µs)
100
10
- (V)
GT
Pulse width
10ms
µs
100
200
500
1ms
Frequency Hz
50
150
150
150
150
20
Upper limit 95%
1
Gate trigger voltage, V
V
GD
0.1
Fig.6 Gate characteristics
Table gives pulse power PGM in Watts
400
100
150
150
125
150
100
150
25
50
-
-
= 125˚C
j
T
Lower limit 5%
Gate trigger current, I
5W
= -40˚C
= 25˚C
j
j
T
T
- (A)
GT
100W
50W
20W
10W
Region of certain
triggering
0.1
Conduction Effective thermal resistance
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Junction to case ˚C/W
Double side
0.022
0.024
0.026
0.027
Anode side
0.038
0.040
0.042
0.043
Anode side cooled
Double side cooled
0.01
Thermal Impedance - Junction to case - (˚C/W)
0.001
1010.10.010.001
0.001 0.01 0.1 1.0 10
Time - (s)
Fig.6 Transient thermal impedance - junction to case
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DCR840F
30
25
1.2
1.0
14
12
10
I
20
2
0.8
t value - (A
8
15
0.6
2
s x 10
6
6
)
10
0.4
4
Peak half sine on-state current - (kA)
5
I
(VR = 0)
TSM
I
(VR = 50% V
TSM
RRM
0.2
)
Peak half sine wave on-state current - (kA)
2
I2t (VR = 0)
I2t (VR = 50% V
110
98765432
RRM
)
0
0
0102030405060
Pulse length, half sine wave - (ms)
Surge current (VR = 0)
Surge current (VR = 50% V
Number of cycles @ 50Hz
RRM
)
Fig.7 Sub-cycle surge currents
Fig.8 Multi-cycle surge currents
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Page 8
DCR840F
PACKAGE DETAILS
For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Hole Ø3.6x2.0 deep (in both electrodes)
Cathode tab
Ø1.5
Gate
Cathode
Ø76 max
Ø48 nom
Ø48 nom
Nominal weight: 450g
Clamping force: 19.5kN ± 10%
Lead length: 420mm
Lead terminal connector: M4 ring
Package outline type code: F
Anode
27.0
25.4
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DCR840F
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability
of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution
(PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded
clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm
discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes.
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury
or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
CUSTOMER SERVICE CENTRE
Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
SALES OFFICES
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (949) 733-3005. Fax: (949) 733-2986.
Rest Of World Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2002 Publication No. DS5521-1 Issue No. 1.1 February 2002
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
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