Datasheet DCR806SG28, DCR806SG27, DCR806SG26, DCR806SG25, DCR806SG24 Datasheet (DYNEX)

DCR806SG

DCR806SG

Phase Control Thyristor

Advance Information

Supersedes August 2000 version, DS4642-5.1 DS4642 -6.0 July 2001

FEATURES

■ Double Side Cooling

■ High Surge Capability

■ High Mean Current

APPLICATIONS

■ High Power Drives

■ High Voltage Power Supplies

■ DC Motor Control

■ Power Supplies

VOLTAGE RATINGS

Type Number Repetitive Peak

Voltages
V

DRM VRRM

V

DCR806SG28
DCR806SG27
DCR806SG26
DCR806SG25
DCR806SG24

Lower voltage grades available.

2800
2700
2600
2500
2400

Conditions

Tvj = 0˚ to 125˚C,
I

= I

RRM

, V
& V
& V

= 50mA,

RRM tp

=

RSM

+ 100V

RRM

= 10ms,

DRM

V

DRM

V

DSM

V

DRM

Respectively

KEY PARAMETERS
V

DRM

I

T(AV)

I

TSM

dVdt* 1000V/
dI/dt 500A/

*Higher dV/dt selections available

2800V
844A
11250A

µs

µs

Outline type code: G.

See Package Details for further information.

Fig. 1 Package outline

ORDERING INFORMATION

When ordering, select the required part number shown in the
Voltage Ratings selection table.

For example:

DCR806SG26

Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.

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DCR806SG

CURRENT RATINGS

T

= 60˚C unless stated otherwise

case

Symbol Parameter Conditions

Double Side Cooled

I

T(AV)

I

T(RMS)

I

Mean on-state current

RMS value

T

Continuous (direct) on-state current

Half wave resistive load 844 A

Single Side Cooled (Anode side)

I

T(AV)

I

T(RMS)

I

T

Mean on-state current

RMS value

Continuous (direct) on-state current

Half wave resistive load 555 A

CURRENT RATINGS

T

= 80˚C unless stated otherwise

case

Symbol Parameter Conditions

Double Side Cooled

UnitsMax.

- 1326 A

- 1201 A

- 872 A

- 733 A

UnitsMax.

I

T(AV)

I

T(RMS)

I

T

Mean on-state current

RMS value

Continuous (direct) on-state current

Single Side Cooled (Anode side)

I

T(AV)

I

T(RMS)

I

T

Mean on-state current

RMS value

Continuous (direct) on-state current

Half wave resistive load 670 A

- 1050 A

- 875 A

Half wave resistive load 430 A

- 675 A

- 540 A

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SURGE RATINGS

DCR806SG

Symbol

I

TSM

2

tI

I

I

TSM

I2t

Surge (non-repetitive) on-state current

2

t for fusing

Surge (non-repetitive) on-state current

2

I

t for fusing 633 x 10

Parameter

THERMAL AND MECHANICAL DATA

Symbol

R

th(j-c)

R

th(c-h)

T

vj

Thermal resistance - junction to case

Thermal resistance - case to heatsink

Virtual junction temperature

Parameter

Conditions

10ms half sine; T

VR = 50% V

RRM

10ms half sine; T

= 125oC

case

- 1/4 sine

= 125oC

case

Max. Units

9.0 kA

405 x 10

11.25 kA

VR = 0

Conditions Min. Max. Units

Double side cooled

dc

- 0.032

Single side cooled

- 0.064

0.008

-

- 0.016

Clamping force 12.5kN
with mounting compound

Cathode dc

Double side

Single side

On-state (conducting) - 135

Reverse (blocking)

-

125

3

A2s

3

A2s

o

C/W

o

C/W- 0.064Anode dc

o

C/W

o

C/W

o

C/W

o

C

o

C

T

stg

-

Storage temperature range

Clamping force

-55 125

11.0 13.0 kN

o

C

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DCR806SG

DYNAMIC CHARACTERISTICS

Symbol

I

RRM/IDRM

Peak reverse and off-state current At V

Parameter

RRM/VDRM

dV/dt Maximum linear rate of rise of off-state voltage To 67% V

From 67% V

dI/dt

Rate of rise of on-state current

Gate source 1.5A
tr = 0.5µs, Tj = 125oC

V

T(TO)

r

T

t

gd

q

Threshold voltage At Tvj = 125oC

On-state slope resistance At Tvj = 125oC

= 67% V

V

Delay time

D

tr = 0.5µs, Tj = 25oC

I

= 500A, tp = 1ms, Tj = 125˚C,

T

VR = 50V, dIRR/dt = 20A/µs,
VDR = 67% V

I

L

I

H

Latching current Tj = 25oC, VD = 5V

Holding current Tj = 25oC, VD = 5V

Conditions Typ. Max. Units

, T

= 125oC

case

= 125oC. Gate open circuit.

DRM Tj

to 1500A

DRM

Repetitive 50Hz

Non-repetitive

-50mA

- 1000 V/µs

- 300 A/µs

- 500 A/µs

- 0.65 mΩ

, Gate source 30V, 15Ω

DRM

, dVDR/dt = 20V/µs linear

DRM

- 1.5 µs

550 1000 mA

60 100 mA

0.91-V

µs500300Turn-off timet

GATE TRIGGER CHARACTERISTICS AND RATINGS

P

V

V

V

V

I

V

I

FGM

P

G(AV)

GT

GT

GD

FGM

FGN

RGM

GM

Gate trigger voltage V

Gate trigger current

Gate non-trigger voltage At V

DRM

V

DRM

= 5V, T

= 5V, T

DRM Tcase

Peak forward gate voltage Anode positive with respect to cathode

Peak forward gate voltage Anode negative with respect to cathode

Peak reverse gate voltage

Peak forward gate current Anode positive with respect to cathode

Peak gate power See table, gate characteristics curve

Mean gate power

= 25oC

case

= 25oC

case

= 125oC

ConditionsParameterSymbol

Max. Units

3.5 V

200 mA

0.25 V

30 V

0.25 V

5V

10 A

150 W

10 W

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CURVES

DCR806SG

2500

Measured under pulse
conditions

2000

- (A)

T

1500

1000

Instantaneous on-state current, I

500

0

0.5 1.0 1.5 2.0 2.5
Instantaneous on-state voltage, V

1: Tj = 125˚C Min

= 125˚C Max

2: T

j

1 2

- (V)

T

Fig.2 Maximum (limit) on-state characteristics

3000

2500

2000

1500

Power loss - (W)

1000

500

0

0 500 1000 1500 2000

Mean current, I

T(AV)

- (A)

D.C.

Half wave

3 Phase
6 Phase

Fig.3 Dissipation curves

VTM Equation:­V

= A + Bln (IT) + C.IT+D.√I

TM

WhereA = 0.6102629

B = 0.08049203
C = 7.189037 x 10
D = –0.01028328

these values are valid for T

T

–4

= 125˚C for IT 500A to 2500A

j

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DCR806SG

10000

- (µC)

S

1000

dI/dt

I

T

Q

S

I

RR

IT = 1250A
I

T

Max. value

IT = 1250A
I

T

Min. value

Total stored charge Q

Conditions:

is total integral stored charge

Q

S

= 125˚C

T

100

j

0.1 1.0 10 100
Rate of decay of on-state current dI/dt - (A/µs)

Fig.4 Stored charge Fig.5 Gate characteristics

= 500A

= 500A

100

Pulse width

10

- (V)

GT

µs
100
200
500

1ms

10ms

Frequency Hz

50

100

150

150

150

150

150

150

150

100

20

Upper limit 99%

1

Gate trigger voltage V

V

GD

Lower limit 99%

0.1

Table gives pulse power PGM in Watts

400
150
125
100

25

-

-

5W

10W

Region of certain

triggering

= -40˚C

= 25˚C

j

j

T

T

= 125˚C

j

T

Gate trigger current, I

GT

- (A)

20W

50W

100W

I

1010.10.010.001

FGM

0.1
Anode side cooled

Double side cooled

0.01

Conduction Effective thermal resistance

Thermal Impedance - Junction to case (˚C/W)

d.c.

Halfwave

3 phase 120˚

6 phase 60˚

0.001

0.001 0.01 0.1 1.0 10

Junction to case ˚C/W

Double side

0.032

0.034

0.044

0.057

Anode side

0.064

0.066

0.076

0.089

Time - (s)

Fig.6 Maximum (limit) transient thermal impedance -

junction to case

25

I2t = Î2 x t
2

20

15

10

400

350

I2t

5

300

Peak half sine wave on-state current - (kA)

0

11012345

10 20 30

250

50

ms Cycles at 50Hz

Duration

Fig.7 Surge (non-repetitive) on-state current vs time (with

50% V

RRM

at T

case

125˚C)

I

2

t value - (A

2

s x 10

3

)

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DCR806SG

PACKAGE DETAILS

For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.

Hole Ø3.6x2.0 deep (in both electrodes)

Cathode tab

Cathode

Gate

Ø1.5

Ø58.5 max

Ø34 nom

Ø34 nom

Nominal weight: 250g

Clamping force: 12.5kN ±10%

Lead length: 420mm

Lead terminal connector: M4 ring

Package outline type code: G

Anode

27.0

25.4

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DCR806SG

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and
current capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.

Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).

DEVICE CLAMPS

Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre­loaded clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and
‘E’ 30mm discs, and bar clamps right up to 83kN of our ‘Z’ 100mm thyristors and diodes.

Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839

HEATSINKS

The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimize
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.

http://www.dynexsemi.com

e-mail: [email protected]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

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All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

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Mainland Europe Tel: [phone]. Fax: [phone]
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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4642-6 Issue No. 6.0 July 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

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