Datasheet DCR720E18, DCR720E14, DCR720E12 Datasheet (DYNEX)

DCR720E

Phase Control Thyristor

Preliminary Information

DS5485-1.2 February 2002

FEATURES

■ Double Side Cooling

■ High Surge Capability

■ Low Inductance Internal Construction

APPLICATIONS

■ High Power Converters

■ DC Motor Control

■ High Voltage Power Supplies

VOLTAGE RATINGS

Part and Ordering

Number

DCR720E18 DCR720E16 DCR720E14 DCR720E12

Lower voltage grades available.

Repetitive Peak

Voltages

V

and V

DRM

V

1800 1600 1400 1200

Conditions

T

= 0˚ to 125˚C,

vj

I

= I

RRM

, V & V & V

= 30mA,

RRM tp

RSM RRM

DRM

V

DRM

V

DSM

V

DRM

respectively

= 10ms, = + 100V

KEY PARAMETERS V

DRM

I

T(AV)

I

TSM

dV/dt* 1000V/ dI/dt 700A/

*Higher dV/dt selections available

(See Package Details for further information)

1800V 724A 9800A

µs

Outline type code: E

Fig. 1 Package outline

ORDERING INFORMATION

When ordering, select the required part number shown in the Voltage Ratings selection table.

For example:

DCR720E16

Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order.

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DCR720E

CURRENT RATINGS

T

= 60˚C unless stated otherwise.

case

Symbol

Double Side Cooled

I

T(AV)

I

T(RMS)

I

T

Mean on-state current

RMS value

Continuous (direct) on-state current

Single Side Cooled

I

T(AV)

I

T(RMS)

I

T

= 80˚C unless stated otherwise.

case

Mean on-state current

RMS value

Continuous (direct) on-state current

Symbol

Double Side Cooled

I

T(AV)

Mean on-state current

Parameter

Test Conditions

Half wave resistive load

Test Conditions

Half wave resistive load

724

500

790

670

570

Units

A

Units

A

Max.

-

1140

1025

-

Max.

I

T(RMS)

I

T

RMS value

Continuous (direct) on-state current

Single Side Cooled

I

T(AV)

I

T(RMS)

I

T

Mean on-state current

RMS value

Continuous (direct) on-state current

Half wave resistive load

-

895

790

390

-

610

505

A

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SURGE RATINGS

DCR720E

Symbol

I

TSM

I2t

I

TSM

I2t

Surge (non-repetitive) on-state current

2

t for fusing

I

Surge (non-repetitive) on-state current

2

t for fusing

I

Parameter

DYNAMIC CHARACTERISTICS

Symbol

I

RRM/IRRM

dV/dt

dI/dt

Peak reverse and off-state current

Max. linear rate of rise of off-state voltage

Rate of rise of on-state current

Parameter

Test Conditions

10ms half sine, T

= 50% V

V

R

10ms half sine, T

V

R

Test Conditions

, T

At V

RRM/VDRM

To 67% V

DRM

From 67% V

= 125˚C

case

, Tj = 125˚C

to 1100A Repetitive 50Hz

DRM

Gate source 20V, 10Ω,

tr ≤ 0.5µs, Tj = 125˚C

= 125˚C

case

- 1/4 sine

RRM

= 125˚C

case

= 0

Non-repetitive

Min.

-

Max.

7.8

0.3 x 10

9.8

0.48 x 10

Max.

30

1000

350

700

Units

kA

2

6

s

A

kA

2

6

s

A

Units

mA

V/µs

A/µs

V

T(TO)

r

T

t

gd

t

q

I

L

I

H

Threshold voltage

On-state slope resistance

Delay time

Turn-off time

Latching current

Holding current

= 125˚C

At T

vj

= 125˚C

At T

vj

= 67% V

V

D

= 0.5µs, Tj = 25˚C

t

r

= 500A, tp = 1ms, Tj =125˚C,

I

T

V

= 50V, dIRR/dt = 20A/µs,

R

= 67% V

V

DR

/dt = 20V/µs linear

dV

DR

= 25˚C, VD = 5V

T

j

= 25˚C, VD = 5V

T

j

, gate source 10V, 5Ω

DRM

,

DRM

300

0.88

-

0.65

-

1.5

-

400

500

-

70

V

mΩ

µs

mA

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DCR720E

THERMAL AND MECHANICAL RATINGS

Symbol

R

th(j-c)

Thermal resistance - junction to case

Parameter

Double side cooled DC

Single side cooled Anode DC

R

th(c-h)

Thermal resistance - case to heatsink

Clamping force 8.0kN Double side

(with mounting compound) Single side

T

vj

Virtual junction temperature

On-state (conducting)

Reverse (blocking)

T

stg

F

m

Storage temperature range

Clamping force

GATE TRIGGER CHARACTERISTICS AND RATINGS

Symbol

Parameter

Test Conditions

Cathode DC

Min.

-

–55

7.2

Max.

0.041

0.074

0.092

0.018

0.036

135

125

8.8

Max.

Units

˚CW

˚C

kN

Units

P

V

I

P

GT

I

GT

GD

FGM

FGN

RGM

FGM

GM

G(AV)

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Peak forward gate voltage

Peak reverse gate voltage

Peak forward gate current

Peak gate power

Mean gate power

V

DRM

V

DRM

At V

= 5V, T

DRM Tcase

= 25oC

case

= 25oC

case

= 125oC

Anode positive with respect to cathode

Anode negative with respect to cathode

-

Anode positive with respect to cathode

See table, gate characteristics curve

-

3

150

0.25

30

0.25

5

10

100

5

V

mA

V

A

W

4/9

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CURVES

DCR720E

3000

Tj = 125˚C

2500

- (A)

T(AV)

2000

1500

1000

Instantaneous on-state current, I

500

0

0.5 1.0 1.5 2.0 2.5 3.0 Instantaneous on-state voltage, V

- (V)

T

1200

1000

800

600

400

Mean power dissipation - (W)

200

0

0 200 400 600 800 1000

Mean on-state current, I

Fig.2 Maximum (limit) on-state characteristics Fig.3 Power dissipation

T(AV)

- (A)

dc

1/2 wave

3 phase 6 phase

VTM Equation:V

= A + Bln (IT) + C.IT+D.√I

TM

Where A = 0.2366

B = 0.1182 C = 0.0005 D = –0.0019

these values are valid for T

T

= 125˚C for IT 100A to 3000A

j

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DCR720E

10000

Conditions: T

= 125˚C

j

V

= 50V

R

= 1ms

t

p

IT = 1500A

- (µC)

R

IT = 500A

1000

Recovered charge, Q

I

T

Q

t

p

dIT/dt

100

I

RM

0.1 1.0 10 100 Rate of decay of on-state current, dIT/dt - (A/µs)

Fig.4 Stored charge Fig.5 Gate characteristics

R

0.25xI

RM

100

Table gives pulse power PGM in Watts

10

- (V)

GT

Pulse width

µs 20

25 100 500 1ms

10ms

Frequency Hz

50 100 100 100 100 100

10

100 100 100 100 100

400 100 100 100

25

12.5

50

-

Upper limit 95%

1

Gate trigger voltage, V

V

GD

Lower limit 5%

0.1

Gate trigger current, I

100W

50W

20W

-

5W

10W

Region of certain

triggering

= -40˚C

= 25˚C

j

= 125˚C

T

j

T

1010.10.010.001

I

GT

- (A)

FGM

0.1

Anode side cooled

Double side cooled

0.01

Thermal Impedance - junction to case - (˚C/W)

0.001

Conduction Effective thermal resistance

d.c.

Halfwave

3 phase 120˚

6 phase 60˚

Junction to case ˚C/W

Double side

0.041

0.044

0.051

0.061

Anode side

0.074

0.077

0.084

0.093

0.001 0.01 0.1 1.0 10 Time - (s)

Fig.6 Maximum (limit) transient thermal impedance -

junction to case (˚C/W)

25

20

15

10

Peak half sine on-state current - (kA)

5

I

(VR = 0)

TSM

I

(VR = 50% V

TSM

RRM

0.75

0.6

I

2

t value - (A

0.45

V

s x 10

0.3

6

)

0.15

)

I2t (VR = 0)

0

I2t (VR = 50% V

110

RRM

98765432

)

0

Pulse lenght, half sine wave (ms)

Fig.7 Sub-cycle surge currents

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14

Surge current (VR = 0)

12

10

8

6

4

Peak half sine wave on-state current - (kA)

2

Surge current (V

= 50% V

R

RRM

DCR720E

)

0

0 102030405060

number of cycles @ 50Hz

Fig.8 Multi-cycle surge currents

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DCR720E

PACKAGE DETAILS

For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.

2 holes Ø3.6 ± 0.1 x 2.0 ± 0.1 deep (One in each electrode)

15˚

30˚

Cathode tab

Gate

Ø1.5

Cathode

Ø42max

Ø25nom.

Nominal weight: 82g

Clamping force: 8kN ±10%

Lead length: 420mm

Lead terminal connector: M4 ring

Package outine type code: E

14

Anode

15

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DCR720E

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers.

Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs).

DEVICE CLAMPS

Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes.

Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839

HEATSINKS

The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office.

http://www.dynexsemi.com

e-mail: [email protected]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550

Datasheet Annotations:

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Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.

All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

SALES OFFICES North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. Rest Of World Tel: +44 (0)1522 502753/502901. Fax: +44 (0)1522 500020

These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2002 Publication No. DS5485-1 Issue No. 1.2 February 2002 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM

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