Datasheet DCR604SE21, DCR604SE20, DCR604SE19, DCR604SE18, DCR604SE17 Datasheet (DYNEX)

DCR604SE

DCR604SE

Phase Control Thyristor

Advance Information

Supersedes January 2000 version, DS4450-4.0 DS4450-5.0 July 2001

FEATURES

■ Double Side Cooling

■ High Surge Capability

■ High Mean Current

■ Fatigue Free

APPLICATIONS

■ High Power Drives

■ High Voltage Power Supplies

■ DC Motor Control

VOLTAGE RATINGS

Type Number Repetitive Peak

Voltages
V

DRM VRRM

V

DCR604SE21
DCR604SE20
DCR604SE19
DCR604SE18
DCR604SE17

Lower voltage grades available.

2100
2000
1900
1800
1700

Conditions

Tvj = 0˚ to 125˚C,
I

= I

RRM

, V
& V
& V

= 30mA,

RRM tp

=

RSM

+ 100V

RRM

= 10ms,

DRM

V

DRM

V

DSM

V

DRM

respectively

KEY PARAMETERS
V
I

T(AV)

I

TSM

dVdt* 1000V/
dI/dt 700A/

*Higher dV/dt selections available

DRM

2100V
706A
8100A

µs

µs

Outline type code: E

See Package Details for further information.

Fig. 1 Package outline

ORDERING INFORMATION

When ordering, select the required part number shown in the
Voltage Ratings selection table.

For example:

DCR604SE20

Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.

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DCR604SE

CURRENT RATINGS

T

= 60˚C unless stated otherwise.

case

Symbol Parameter Conditions

Double Side Cooled

I

T(AV)

I

T(RMS)

I

Mean on-state current

RMS value

T

Continuous (direct) on-state current

Half wave resistive load 706 A

Single Side Cooled (Anode side)

I

T(AV)

I

T(RMS)

I

T

Mean on-state current

RMS value

Continuous (direct) on-state current

Half wave resistive load 487 A

CURRENT RATINGS

T

= 80˚C unless stated otherwise.

case

Symbol Parameter Conditions

Double Side Cooled

UnitsMax.

- 1109 A

- 995 A

- 766 A

- 646 A

UnitsMax.

I

T(AV)

I

T(RMS)

I

T

Mean on-state current

RMS value

Continuous (direct) on-state current

Single Side Cooled (Anode side)

I

T(AV)

I

T(RMS)

I

T

Mean on-state current

RMS value

Continuous (direct) on-state current

Half wave resistive load 562 A

- 882 A

- 770 A

Half wave resistive load 380 A

- 595 A

- 480 A

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SURGE RATINGS

DCR604SE

Symbol

I

TSM

2

tI

I

I

TSM

I2t

Surge (non-repetitive) on-state current

2

t for fusing

Surge (non-repetitive) on-state current

2

I

t for fusing 0.33 x 106A2s

Parameter

THERMAL AND MECHANICAL DATA

Symbol

R

th(j-c)

R

th(c-h)

Thermal resistance - junction to case

Thermal resistance - case to heatsink

Parameter

Conditions

10ms half sine; T

VR = 50% V

10ms half sine; T

VR = 0

Conditions Min. Max. Units

Double side cooled

Single side cooled

Clamping force 8.0kN
with mounting compound

case

- 1/4 sine

RRM

case

= 125oC

= 125oC

dc

Cathode dc
Double side

Single side

Max. Units

6.5 kA

6

0.21 x 10

A2s

8.1 kA

- 0.041oC/W

o

C/W- 0.074Anode dc

o

- 0.092

0.018

-

C/W

o

C/W

- 0.036oC/W

On-state (conducting)

T

vj

Virtual junction temperature

Reverse (blocking)

T

stg

-

Storage temperature range

Clamping force

- 135

-

125

–55 125

7.2 8.8 kN

o

C

o

C

o

C

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DCR604SE

DYNAMIC CHARACTERISTICS

ParameterSymbol Conditions

I

RRM/IDRM

Peak reverse and off-state current At V

RRM/VDRM

dV/dt Maximum linear rate of rise of off-state voltage To 67% V

From 67% V

dI/dt

Rate of rise of on-state current

Gate source 20V, 20Ω
tr ≤ 0.5µs, Tj = 125oC

V

T(TO)

r

T

t

gd

I

L

I

H

q

Threshold voltage At Tvj = 125oC

On-state slope resistance At Tvj = 125oC

V

= 67% V

Delay time

D

tr = 0.5µs, Tj = 25oC

Latching current Tj = 25oC, VD = 5V

Holding current Tj = 25oC, VD = 5V

I

= 500A, tp = 1ms, Tj = 125˚C,

T

VR = 50V, dIRR/dt = 20A/µs,
VDR = 67% V

, T

= 125oC

case

= 125oC. Gate open circuit.

DRM Tj

to 1100A

DRM

, Gate source 10V, 5Ω

DRM

, dVDR/dt = 20V/µs linear

DRM

Repetitive 50Hz

Non-repetitive

Typ. Max. Units

-30mA

- 1000 V/µs

- 350 A/µs

- 700 A/µs

0.93-V

- 0.667 mΩ

- 1.5 µs

- 500 mA

-70mA

µs400300Turn-off timet

GATE TRIGGER CHARACTERISTICS AND RATINGS

V

GT

I

GT

V

GD

V

FGM

V

FGN

V

RGM

I

FGM

P

GM

P

G(AV)

Gate trigger voltage V

Gate trigger current

DRM

V

DRM

= 5V, T

= 5V, T

Gate non-trigger voltage At 67% V

Peak forward gate voltage Anode positive with respect to cathode

Peak forward gate voltage Anode negative with respect to cathode

Peak reverse gate voltage

Peak forward gate current Anode positive with respect to cathode

Peak gate power See table, gate characteristics curve

Mean gate power

= 25oC

case

= 25oC

case

DRM Tcase

ConditionsParameterSymbol

= 125oC

Max. Units

3.0 V

150 mA

0.25 V

30 V

0.25 V

5V

10 A

100 W

5W

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CURVES

DCR604SE

1600

Measured under pulse conditions
T

= 125˚C

j

1400

1200

- (A)

T

1000

800

600

400

Instantaneous on-state current, I

200

0

0.5 1.0 1.5 2.0
Instantaneous on-state voltage, V

- (V)

T

Fig.2 Maximum (limit) on-state characteristics

1200

Half wave

1000

800

600

400

Mean power dissipation - (W)

200

0

0 200 400 600 800

6 phase

Mean on-state current, I

3 phase

T(AV)

- (A)

Fig.3 Dissipation curves

d.c.

VTM Equation:­VTM = A + Bln (IT) + C.IT+D.√I

T

Where A = 1.086551

B = –0.173031
C = –3.307461 x 10

–5

D = 0.056345

these values are valid for Tj = 125˚C for IT 500A to 1600A

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DCR604SE

10000

Conditions:
Tj = 125˚C
VR = 50V
tp = 1ms

IT = 1500A

- (µC)

R

IT = 500A

1000

Recovered charge, Q

I

T

Q

t

p

dIT/dt

100

I

RM

0.1 1.0 10 100
Rate of decay of on-state current, dIT/dt - (A/µs)

Fig.4 Recovered charge Fig.5 Gate characteristics

R

0.25xI

RM

100

Table gives pulse power PGM in Watts

10

- (V)

GT

Pulse width

µs
20

25
100
500

1ms

10ms

Frequency Hz

50
100
100
100
100
100

10

100
100
100
100
100

50

400
100
100
100

25

12.5

-

-

Upper limit 95%

1

Gate trigger voltage, V

V

GD

Lower limit 5%

0.1

Gate trigger current, I

100W

50W

20W

10W

5W

Region of certain

triggering

= -40˚C

= 25˚C

j

j

= 125˚C

T

T

j

T

1010.10.010.001

I

GT

- (A)

FGM

0.1

Anode side cooled

Double side cooled

0.01

Thermal Impedance - junction to case - (˚C/W)

0.001

Conduction Effective thermal resistance

d.c.

Halfwave

3 phase 120˚

6 phase 60˚

Junction to case ˚C/W

Double side

0.041

0.044

0.051

0.061

Anode side

0.074

0.077

0.084

0.093

0.001 0.01 0.1 1.0 10
Time - (s)

Fig.6 Maximum (limit) transient thermal impedance -

junction to case

20

I2t = Î2 x t
2

15

10

225

200

I2t

5

175

Peak half sine wave on-state current - (kA)

0

11012345

10 20 30

150

50

ms Cycles at 50Hz

Duration

Fig.7 Surge (non-repetitive) on-state current vs time (with

50% V

RRM

at T

case

125˚C)

I

2

t value - (A

2

s x 10

3

)

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DCR604SE

PACKAGE DETAILS

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.

2 holes Ø3.6 ± 0.1 x 2.0 ± 0.1 deep
(One in each electrode)

15˚

30˚

Cathode tab

Gate

Ø1.5

Cathode

Ø42max

Ø25nom.

Ø25nom.

Nominal weight: 82g

Clamping force: 8kN ±10%

Lead length: 420mm

Lead terminal connector: M4 ring

Package outine type code: E

14

Anode

15

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DCR604SE

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current
capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.

Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution
(PACs).

DEVICE CLAMPS

Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded
clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm

Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839

HEATSINKS

Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance
or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer
Services.

http://www.dynexsemi.com

e-mail: [email protected]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.

All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

CUSTOMER SERVICE CENTRES

Mainland Europe Tel: [phone]. Fax: [phone]
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SALES OFFICES

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North America Tel: [phone]. Fax: [phone]. Toll Free: 1.888.33.DYNEX (39639) /

Tel: [phone]. Fax: [phone].
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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4450-5 Issue No. 5.0 July 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

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