Datasheet DCR504ST14, DCR504ST13, DCR504ST12, DCR504ST11, DCR504ST10 Datasheet (DYNEX)

DCR504ST

DCR504ST

Phase Control Thyristor

Advance Information

Supersedes January 2000version, DS4448 -4.0 DS4448 -5.0 July 2001

FEATURES

■ Double Side Cooling

■ High Surge Capability

■ High Mean Current

■ Fatigue Free

APPLICATIONS

■ High Power Drives

■ High Voltage Power Supplies

■ DC Motor Control

VOLTAGE RATINGS

Type Number Repetitive Peak

Voltages
V

DRM VRRM

V

DCR504ST14
DCR504ST13
DCR504ST12
DCR504ST11
DCR504ST10

Lower voltage grades available.

1400
1300
1200
1100
1000

Conditions

Tvj = 0˚ to 125˚C,
I

= I

RRM

, V
& V
& V

= 30mA,

RRM tp

=

RSM

+ 100V

RRM

= 10ms,

DRM

V

DRM

V

DSM

V

DRM

respectively

KEY PARAMETERS
V

DRM

I

T(AV)

I

TSM

dVdt 1000V/
dI/dt 700A/

1400V
456A
6800A

µs

µs

Outline type code: T

See Package Details for further information.

Fig. 1 Package outline

ORDERING INFORMATION

When ordering, select the required part number shown in the
Voltage Ratings selection table.

For example:

DCR504ST12

Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.

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DCR504ST

CURRENT RATINGS

T

= 60˚C unless stated otherwise

case

Symbol Parameter Conditions

Double Side Cooled

I

T(AV)

I

T(RMS)

I

Mean on-state current

RMS value

T

Continuous (direct) on-state current

Half wave resistive load 456 A

Single Side Cooled (Anode side)

I

T(AV)

I

T(RMS)

I

T

Mean on-state current

RMS value

Continuous (direct) on-state current

Half wave resistive load 322 A

CURRENT RATINGS

T

= 80˚C unless stated otherwise

case

Symbol Parameter Conditions

Double Side Cooled

UnitsMax.

- 717 A

- 655 A

- 505 A

- 425 A

UnitsMax.

I

T(AV)

I

T(RMS)

I

T

Mean on-state current

RMS value

Continuous (direct) on-state current

Single Side Cooled (Anode side)

I

T(AV)

I

T(RMS)

I

T

Mean on-state current

RMS value

Continuous (direct) on-state current

Half wave resistive load 355 A

- 557 A

- 495 A

Half wave resistive load 248 A

- 390 A

- 310 A

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SURGE RATINGS

DCR504ST

Symbol

I

TSM

2

tI

I

I

TSM

I2t

Surge (non-repetitive) on-state current

2

t for fusing

Surge (non-repetitive) on-state current

2

I

t for fusing 231 x 10

Parameter

THERMAL AND MECHANICAL DATA

Symbol

R

th(j-c)

R

th(c-h)

Thermal resistance - junction to case

Thermal resistance - case to heatsink

Parameter

Conditions

10ms half sine; T

VR = 50% V

RRM

10ms half sine; T

VR = 0

Conditions Min. Max. Units

Double side cooled

Single side cooled

Clamping force 4.5kN
with mounting compound

= 125oC

case

- 1/4 sine

= 125oC

case

dc

Cathode dc
Double side

Single side

Max. Units

5.5 kA

3

150x 10

A2s

6.8 kA

3

A2s

- 0.063oC/W

o

C/W- 0.11Anode dc

o

- 0.147

0.02

-

C/W

o

C/W

- 0.04oC/W

On-state (conducting) - 135

T

vj

T

stg

-

Virtual junction temperature

Storage temperature range

Clamping force

Reverse (blocking)

-

125

–55 125

4.0 5.0 kN

o

C

o

C

o

C

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DCR504ST

DYNAMIC CHARACTERISTICS

Symbol

I

RRM/IDRM

Peak reverse and off-state current At V

Parameter

RRM/VDRM

dV/dt Maximum linear rate of rise of off-state voltage To 67% V

From 67% V

dI/dt

Rate of rise of on-state current

Gate source 10V, 5Ω
tr ≤ 0.5µs, Tj = 125oC

V

T(TO)

r

T

t

gd

I

L

I

H

q

Threshold voltage At Tvj = 125oC

On-state slope resistance At Tvj = 125oC

= 67% V

V

Delay time

D

dIG/dt = 20A/µs, Tj = 25oC

Latching current Tj = 25oC, VD = 10V

Holding current Tj = 25oC, R

I

= 300A, tp = 1ms, Tj = 125˚C,

T

VR = 50V, dIRR/dt = 20A/µs,
VDR = 67% V

Conditions

, T

= 125oC

case

= 125oC. Gate open circuit.

DRM Tj

to 700A

DRM

, Gate source 20V, 10Ω

DRM

= ∞

g-k

, dVDR/dt = 20V/µs linear.

DRM

Repetitive 50Hz

Non-repetitive

Typ. Max. Units

-30mA

- 1000 V/µs

- 350 A/µs

- 700 A/µs

1.05-V

- 0.8 mΩ

- 0.8 µs

- 200 mA

-30mA

µs-300Turn-off timet

GATE TRIGGER CHARACTERISTICS AND RATINGS

V

GT

I

GT

V

GD

V

FGM

V

FGN

V

RGM

I

FGM

P

GM

P

G(AV)

Gate trigger voltage V

Gate trigger current

V

DRM

DRM

= 5V, T

= 5V, T

Gate non-trigger voltage At 67% V

Peak forward gate voltage Anode positive with respect to cathode

Peak forward gate voltage Anode negative with respect to cathode

Peak reverse gate voltage

Peak forward gate current Anode positive with respect to cathode

Peak gate power See table, gate characteristics curve

Mean gate power

= 25oC

case

= 25oC

case

DRM Tcase

ConditionsParameterSymbol

= 125oC

Max. Units

3.0 V

150 mA

0.25 V

30 V

0.25 V

5V

10 A

100 W

5W

4/8

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CURVES

DCR504ST

2000

Measured under pulse conditions
Tj = 125˚C

1500

- (A)

T

1000

500

Instantaneous on-state current, I

0

1.0 1.5 2.0 2.5
Instantaneous on-state voltage, VT - (V)

Fig.2 Maximum (limit) on-state characteristics

1000

d.c.

800

600

400

Mean power dissipation - (W)

200

0

0 200 400 600 800

6 phase

Mean on-state current, IT(AV) - (A)

Half wave

3 phase

Fig.3 Dissipation curves

VTM Equation:­VTM = A + Bln (IT) + C.IT+D.√I

T

Where A = 0.351375

B = 0.171814
C = 0.000964
D = –0.020616

these values are valid for Tj = 125˚C for IT 500A to 1800A

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DCR504ST

10000

I

T

Conditions:
T

- (µC)

Q

R

t

p

dIT/dt

R

I

RM

0.25xI

RM

V
t

p

1000

Recovered charge, Q

100

0.1 1.0 10 100
Rate of decay of on-state current, dI

/dt - (A/µs)

T

Fig.4 Recovered charge Fig.5 Gate characteristics

j

= 125˚C

R

= 50V

= 1ms

IT = 300A

100

10

- (V)

GT

Upper limit 95%

1

Gate trigger voltage, V

V

GD

Lower limit 5%

0.1

= 25˚C

j

= 125˚C

T

j

T

Gate trigger current, I

10W

5W

Region of certain

triggering

= -40˚C

j

T

- (A)

GT

20W

50W

100W

I

FGM

1010.10.010.001

1.0

Anode side cooled

0.1

Double side cooled

0.01

Thermal impedance - (˚C/W)

0.001

Conduction

Halfwave

3 phase 120˚

6 phase 60˚

Effective thermal resistance

Junction to case ˚C/W

Double side

d.c.

0.063

0.073

0.093

0.112

Anode side

Time - (s)

Fig.6 Maximum (limit) transient thermal impedance -

junction to case

0.11

0.12

0.14

0.16

20

I2t = Î2 x t
2

15

10

150

I

2

t value - (A

I2t

50

100

50

2

s x 10

3

)

5

Peak half sine wave on-state current - (kA)

0

11012345

1010.10.010.001

ms Cycles at 50Hz

10 20 30

Duration

Fig.7 Surge (non-repetitive) on-state current vs time (with

50% V

RRM

at T

case

125˚C)

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DCR504ST

PACKAGE DETAILS

For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.

Hole 3.6 x 2.0 deep
(in both electrodes)

6.3

Cathode tab

Cathode

Ø 42 max

Ø19nom

Ø1.5

Gate

Ø19nom

Nominal weight: 55g

Clamping force: 4.5kN ±10%

Lead length: 205mm

Lead terminal connector: M4 ring

Package outine type code: T

Anode

15.0

14.0

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DCR504ST

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current
capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.

Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution
(PACs).

DEVICE CLAMPS

Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded
clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm

Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839

HEATSINKS

Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance
or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer
Services.

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e-mail: [email protected]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4448-5 Issue No. 5.0 July 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

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