Datasheet DCR1675SZ52, DCR1675SZ51, DCR1675SZ50, DCR1675SZ49, DCR1675SZ48 Datasheet (DYNEX)

DCR1675SZ

DCR1675SZ

Phase Control Thyristor

Advance Information

Supersedes January 2000 version, DS4648-6.0 DS4648 -7.1 July 2001

FEATURES

■ Double Side Cooling

■ High Surge Capability

■ High Mean Current

■ Fatigue Free

APPLICATIONS

■ High Power Drives

■ High Voltage Power Supplies

■ DC Motor Control

VOLTAGE RATINGS

Type Number Repetitive Peak

Voltages
V

DRM VRRM

V

DCR1675SZ52
DCR1675SZ51
DCR1675SZ50
DCR1675SZ49
DCR1675SZ48

Lower voltage grades available.

5200
5100
5000
4900
4800

Conditions

Tvj = 0˚ to 125˚C,
I

= I

RRM

, V
& V
& V

RRM tp

= 500mA,

= 10ms,

=

RSM

+ 100V

RRM

DRM

V

DRM

V

DSM

V

DRM

respectively

ORDERING INFORMATION

When ordering, select the required part number shown in the
Voltage Ratings selection table.

For example:

DCR1675SZ51

Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.

KEY PARAMETERS
V

DRM

I

T(AV)

I

TSM

dVdt* 1000V/
dI/dt 300A/

*Higher dV/dt selections available

5200V
3770A
50000A

µs

µs

Outline type code: Z.

See Package Details for further information.

Fig. 1 Package outline

www.dynexsemi.com

1/8

DCR1675SZ

CURRENT RATINGS

T

= 60˚C unless stated otherwise.

case

Symbol Parameter Conditions

Double Side Cooled

I

T(AV)

I

T(RMS)

I

Mean on-state current

RMS value

T

Continuous (direct) on-state current

Half wave resistive load 3770 A

Single Side Cooled (Anode side)

I

T(AV)

I

T(RMS)

I

T

Mean on-state current

RMS value

Continuous (direct) on-state current

Half wave resistive load 2476 A

CURRENT RATINGS

T

= 80˚C unless stated otherwise.

case

Symbol Parameter Conditions

Double Side Cooled

UnitsMax.

- 5920 A

- 5486 A

- 3889 A

- 3333 A

UnitsMax.

I

T(AV)

I

T(RMS)

I

T

Mean on-state current

RMS value

Continuous (direct) on-state current

Single Side Cooled (Anode side)

I

T(AV)

I

T(RMS)

I

T

Mean on-state current

RMS value

Continuous (direct) on-state current

Half wave resistive load 2975 A

- 4670 A

- 4230 A

Half wave resistive load 1920 A

- 3015 A

- 2510 A

2/8

www.dynexsemi.com

SURGE RATINGS

DCR1675SZ

Symbol

I

TSM

2

tI

I

I

TSM

I2t

Surge (non-repetitive) on-state current

2

t for fusing

Surge (non-repetitive) on-state current

2

I

t for fusing 19.5 x 106A2s

Parameter

THERMAL AND MECHANICAL DATA

Symbol

R

th(j-c)

R

th(c-h)

Thermal resistance - junction to case

Thermal resistance - case to heatsink

Parameter

Conditions

10ms half sine; T

VR = 50% V

10ms half sine; T

VR = 0

Conditions Min. Max. Units

Double side cooled

Single side cooled

Clamping force 83.0kN
with mounting compound

case

- 1/4 sine

RRM

case

= 125oC

= 125oC

dc

Cathode dc
Double side

Single side

Max. Units

50.0 kA

12.5 x 10

62.5 kA

- 0.0065

- 0.013

0.001

-

- 0.002

6

A2s

o

C/W

o

C/W- 0.013Anode dc

o

C/W

o

C/W

o

C/W

On-state (conducting) - 135

T

vj

T

stg

-

Virtual junction temperature

Storage temperature range

Clamping force

Reverse (blocking)

-

125

–55 125

74.0 91.0 kN

o

C

o

C

o

C

www.dynexsemi.com

3/8

DCR1675SZ

DYNAMIC CHARACTERISTICS

ParameterSymbol Conditions Typ. Max. Units

I

RRM/IDRM

Peak reverse and off-state current At V

RRM/VDRM

dV/dt Maximum linear rate of rise of off-state voltage To 67% V

From 67% V

dI/dt

Rate of rise of on-state current

Gate source 30V, 10Ω
tr = 0.5µs to 1A, Tj = 125oC

V

T(TO)

r

T

t

gd

I

L

I

H

Threshold voltage At Tvj = 125oC

On-state slope resistance At Tvj = 125oC

V

= 67% V

Delay time

D

tr = 0.5µs, Tj = 25oC

Latching current Tj = 25oC, VD = 5V

Holding current Tj = 25oC, R

GATE TRIGGER CHARACTERISTICS AND RATINGS

V

GT

Gate trigger voltage V

DRM

= 5V, T

, T

= 125oC

case

= 125oC, gate open circuit.

DRM Tj

to 1000A

DRM

, Gate source 20V, 10Ω

DRM

= ∞

g-k

ConditionsParameterSymbol

= 25oC

case

Repetitive 50Hz

Non-repetitive

- 500 mA

- 1000 V/µs

- 150 A/µs

- 300 A/µs

1.0-V

- 0.15 mΩ

- 1.1 µs

- 650 mA

- 200 mA

Max. Units

3.5 V

V

V

V

P

I

V

I

FGM

P

G(AV)

GT

GD

FGM

FGN

RGM

GM

Gate trigger current

DRM

Gate non-trigger voltage At V

= 5V, T

DRM Tcase

= 25oC

case

= 125oC

V

Peak forward gate voltage Anode positive with respect to cathode

Peak forward gate voltage Anode negative with respect to cathode

Peak reverse gate voltage

Peak forward gate current Anode positive with respect to cathode

Peak gate power See table, gate characteristics curve

Mean gate power

500 mA

0.25 V

30 V

0.25 V

5V

30 A

150 W

10 W

4/8

www.dynexsemi.com

CURVES

DCR1675SZ

5000

Measured under pulse conditions
T

= 125˚C

j

4000

- (A)

T

3000

2000

Instantaneous on-state current, I

1000

0

0.5 1.0 1.5 2.0
Instantaneous on-state voltage, V

- (V)

T

Fig.2 Maximum (limit) on-state characteristics

10000

Half wave

8000

6 phase

6000

4000

Mean power dissipation - (W)

2000

0

0 1000 2000 3000 4000

Mean on-state current, I

3 phase

Fig.3 Dissipation curves

T(AV)

d.c.

5000

- (A)

VTM Equation:­V

= A + Bln (IT) + C.IT+D.√I

TM

Where A = 0.8497627

B = –0.03614853
C = 5.286579 x 10
D = 0.01334724

these values are valid for T

T

–5

= 125˚C for IT 500A to 5000A

j

www.dynexsemi.com

5/8

DCR1675SZ

100000

Tj = 125˚C

IT = 600A

- (µC)

S

10000

Total stored charge, Q

I

T

tp = 3ms

dI/dt

1000

0.1 1.0 10 100
Rate of decay of on-state current dI/dt - (A/µs)

Fig.4 Stored charge

100

Table gives pulse power PGM in Watts

Frequency Hz

50

100

µs

150
150
150
150

20

150
150
150
100

400
150
125
100

25

-

-

100W

50W

20W

V

FGM

10W

- (V)

10

GT

Pulse Width

100
200
500

1ms

10ms

Tj = 25˚C

1

Gate trigger voltage, V

Q

S

V

GD

Upper Limit 99%

Lower Limit 1%

I

RM

0.1

0.001 0.10.01 1.0

I

GD

I

FGM

10

Gate trigger current, IGT - (A)

Fig.5 Gate characteristics

0.1

Anode side cooled

0.01

Double side cooled

0.001

Thermal impedance - (˚C/W)

Effective thermal resistance

Junction to case ˚C/W

Double side

0.0065

0.0072

0.0073

0.0076

Anode side

0.0130

0.0137

0.0138

0.0141

1010.10.010.001

0.0001

Conduction

d.c.

Halfwave

3 phase 120˚

6 phase 60˚

Time - (s)

Fig.6 Transient thermal impedance - junction to case

100

125

I2t = Î2 x t
2

100

12.5

I2t

10.0

75

7.5

50

5.0

25

Peak half sine wave on-state current - (kA)

0

11012345

10 20 30

2.5

0

50

ms Cycles at 50Hz

Duration

Fig.7 Surge (non-repetitive) on-state current vs time (with

50% V

RRM

at T

= 125˚C)

case

I

2

t value - (A

2

s x 10

6

)

6/8

www.dynexsemi.com

DCR1675SZ

PACKAGE DETAILS

For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.

2 holes Ø3.6 ± 0.5 depth 2.0
(One in each electrode)

Gate tab

Cathode tab

Cathode

37.5 max

Ø151 max

Ø100

Ø100

Ø148 max

Anode

Nominal weight: 2800g

Clamping force: 83kN ±10%

Lead length: 500mm

Lead terminal connector: M4 ring

Package outline type code: Z

www.dynexsemi.com

7/8

DCR1675SZ

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability
of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.

Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution
(PACs).

DEVICE CLAMPS

Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded
clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm
discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes.

Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839

HEATSINKS

The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.

http://www.dynexsemi.com

e-mail: [email protected]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.

All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

CUSTOMER SERVICE CENTRES

Mainland Europe Tel: [phone]. Fax: [phone]
North America Tel: [phone]. Fax: [phone].
UK, Scandinavia & Rest Of World Tel: [phone]. Fax: [phone]

SALES OFFICES

Mainland Europe Tel: [phone]. Fax: [phone]
North America Tel: [phone]. Fax: [phone]. Toll Free: 1.888.33.DYNEX (39639) /

Tel: [phone]. Fax: [phone].
UK, Scandinavia & Rest Of World Tel: [phone]. Fax: [phone]

These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4648-7 Issue No. 7.1 July 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

8/8

www.dynexsemi.com