Datasheet DCR1476SY38, DCR1476SY37, DCR1476SY36, DCR1476SY35, DCR1476SY34 Datasheet (DYNEX)

DCR1476SY

DCR1476SY

Phase Control Thyristor

Advance Information

Replaces January 2000 version, DS4647-5.0 DS4647-6.0 July 2001

FEATURES

■ Double Side Cooling

■ High Surge Capability

■ High Mean Current

■ Fatigue Free

APPLICATIONS

■ High Power Drives

■ High Voltage Power Supplies

■ DC Motor Control

VOLTAGE RATINGS

Type Number Repetitive Peak

Voltages
V

DRM VRRM

V

DCR1476SY38
DCR1476SY37
DCR1476SY36
DCR1476SY35
DCR1476SY34

Lower voltage grades available.

3800
3700
3600
3500
3400

Conditions

Tvj = 0˚ to 125˚C,
I

= I

, V
& V
& V

RRM

RRM tp

= 250mA,

= 10ms,

=

RSM

+ 100V

RRM

DRM

V

DRM

V

DSM

V

DRM

respectively

ORDERING INFORMATION

When ordering, select the required part number shown in the
Voltage Ratings selection table.

For example:

DCR1476SY36

Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.

KEY PARAMETERS
V

DRM

I

T(AV)

I

TSM

dVdt 1000V/

3800V
2223A
36250A

µs

dI/dt 300A/µs

Outline type code: Y

See Package Details for further information.

(The DCR1476 is also available in a thin package, type code V.

Please contact Customer Services for more information).

Fig. 1 Package outline

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DCR1476SY

CURRENT RATINGS

T

= 60˚C unless stated otherwise.

case

Symbol Parameter Conditions

Double Side Cooled

I

T(AV)

I

T(RMS)

Mean on-state current

RMS value

I

T

Continuous (direct) on-state current

Half wave resistive load 2223 A

Single Side Cooled (Anode side)

I

T(AV)

I

T(RMS)

I

T

Mean on-state current

RMS value

Continuous (direct) on-state current

Half wave resistive load 1479 A

CURRENT RATINGS

T

= 80˚C unless stated otherwise.

case

Symbol Parameter Conditions

Double Side Cooled

UnitsMax.

- 3492 A

- 3287 A

- 2323 A

- 2035 A

UnitsMax.

I

T(AV)

I

T(RMS)

I

T

Mean on-state current

RMS value

Continuous (direct) on-state current

Single Side Cooled (Anode side)

I

T(AV)

I

T(RMS)

I

T

Mean on-state current

RMS value

Continuous (direct) on-state current

Half wave resistive load 1770 A

- 2780 A

- 2530 A

Half wave resistive load 1170 A

- 1837 A

- 1590 A

2/8

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SURGE RATINGS

DCR1476SY

Symbol

I

TSM

2

tI

I

I

TSM

I2tI

Surge (non-repetitive) on-state current

2

t for fusing

Surge (non-repetitive) on-state current

2

t for fusing 6.57 x 106A2s

Parameter

THERMAL AND MECHANICAL DATA

Symbol Parameter

R

th(j-c)

th(c-h)

Thermal resistance - junction to case

Thermal resistance - case to heatsinkR

Conditions

10ms half sine; T

V

= 50% V

R

RRM

10ms half sine; T

V

= 0

R

Conditions Min. Max. Units

Double side cooled

Single side cooled

Clamping force 43.0kN
with mounting compound

= 125oC

case

- 1/4 sine

= 125oC

case

dc

Cathode dc
Double side

Single side

Max. Units

29.0 kA

4.21 x 106A2s

36.25 kA

- 0.0095

- 0.019

0.002

-

- 0.004

o

C/W

o

C/W- 0.019Anode dc

o

C/W

o

C/W

o

C/W

On-state (conducting) - 135

T

vj

T

stg

-

Virtual junction temperature

Storage temperature range

Clamping force

Reverse (blocking)

-

125

–55 125

38.0 47.0 kN

o

C

o

C

o

C

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DCR1476SY

DYNAMIC CHARACTERISTICS

ParameterSymbol Conditions Typ. Max. Units

I

RRM/IDRM

Peak reverse and off-state current At V

RRM/VDRM

dV/dt Maximum linear rate of rise of off-state voltage To 67% V

From 67% V

dI/dt

Rate of rise of on-state current

Gate source 20V, 10Ω
tr ≤ 0.5µs, Tj = 125oC

V

T(TO)

r

T

t

gd

q

I

L

I

H

Threshold voltage At Tvj = 125oC

On-state slope resistance At Tvj = 125oC

Delay time

VD = 67% V
tr = 0.5µs, Tj = 25oC

I

= 1000A, tp = 1ms, Tj = 125˚C,

T

= 50V, dIRR/dt = 2A/µs,

V

R

VDR = 67% V

Latching current Tj = 25oC, VD = 5V

Holding current Tj = 25oC, R

GATE TRIGGER CHARACTERISTICS AND RATINGS

, T

= 125oC

case

= 125oC.

DRM Tj

to 1000A

DRM

, Gate source 30V, 15Ω

DRM

, dVDR/dt = 8V/µs linear

DRM

= ∞

g-k

Repetitive 50Hz

Non-repetitive

- 250 mA

- 1000 V/µs

- 150 A/µs

- 300 A/µs

1.03-V

- 0.32 mΩ

- 2.5 µs

µs800600Turn-off timet

300 1000 mA

- 500 mA

ConditionsParameterSymbol

V

GT

I

GT

V

GD

V

FGM

V

FGN

V

RGM

I

FGM

P

GM

P

G(AV)

Gate trigger voltage V

Gate trigger current

Gate non-trigger voltage At V

DRM

V

DRM

= 5V, T

= 5V, T

DRM Tcase

= 25oC

case

= 25oC

case

= 125oC

Peak forward gate voltage Anode positive with respect to cathode

Peak forward gate voltage Anode negative with respect to cathode

Peak reverse gate voltage

Peak forward gate current Anode positive with respect to cathode

Peak gate power See table, gate characteristics curve

Mean gate power

Max. Units

4.0 V

400 mA

0.25 V

30 V

0.25 V

5V

30 A

150 W

10 W

4/8

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CURVES

DCR1476SY

8000

Measured under pulse conditions

= 125˚C

T

j

6000

- (A)

T

4000

2000

Instantaneous on-state current, I

0

1.0 2.0 3.0 4.0
Instantaneous on-state voltage, V

- (V)

T

Fig.2 Maximum (limit) on-state characteristics

7000

d.c.

6000

6 phase

5000

4000

3000

Mean power dissipation - (W)

2000

1000

0

0 1000 2000 3000 4000

Mean on-state current, I

Half wave

3 phase

T(AV)

- (A)

Fig.3 Dissipation curves

VTM Equation:-

= A + Bln (IT) + C.IT+D.√I

V

TM

T

Where A = 0.8659641

B = 0.03698496
C = 3.245389 x 10
D = –2.597435 x 10

–4

–3

these values are valid for Tj = 125˚C for IT 500A to 7000A

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5/8

DCR1476SY

100000

- (µC)

S

t

p

dI/dt

I

T

Q

S

I

RM

10000

Total stored charge, Q

Conditions:
Tj = 125˚C
QS is total integral stored charge

1000

0.1 1.0 10 100
Rate of decay of on-state current, dI/dt - (A/µs)

Fig.4 Stored charge

IT = 2000A

100

Table gives pulse power PGM in Watts

V

FGM

- (V)

GT

10

1

Pulse width

1ms

10ms

µs
100
200
500

Pulse frequency Hz

50

100

150

150

150

150

150

150

150

100

20

-

Upper limit 99%

Gate trigger voltage, V

Lower limit 1%

0.1

Gate trigger current, I

Fig.5 Gate characteristics

400
150
125
100

25

100W

-

50W

20W

10W

5W

2W

= 25˚C

= -40˚C

j

j

T

T

= 125˚C

j

T

1010.10.010.001

- (A)

GT

0.1

Anode side cooled

0.01
Double side cooled

0.001

Thermal impedance - (˚C/W)

Effective thermal resistance

Junction to case ˚C/W

Double side

0.0095

0.0105

0.0112

0.0139

Anode side

0.019

0.020

0.0207

0.0234

0.0001

Conduction

d.c.

Halfwave

3 phase 120˚

6 phase 60˚

1010.10.010.001

Time - (s)

Fig.6 Transient thermal impedance - junction to case

100

60

I2t = Î2 x t
2

50

40

4.4

4.0

I

2

30

t value - (A

3.6

3.2

I2t

20

Peak half sine wave on-state current - (kA)

2.8

2.4

2

s x 10

6

)

2.0

10

11012345

10 20 30

50

1.6

ms Cycles at 50Hz

Duration

Fig.7 Surge (non-repetitive) on-state current vs time (with

50% V

RSM

at T

= 125˚C)

case

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DCR1476SY

PACKAGE DETAILS

For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.

Hole Ø3.6 x 2.0 deep (One in each electrode)

Cathode tab

Cathode

Ø1.5

Gate

Ø112.5 max

Ø73 nom

Ø73 nom

Anode

37.7

36.0

Nominal weight: 1600g

Clamping force: 43kN ±10%

Lead length: 420mm

Lead terminal connector: M4 ring

Package outine type code: Y

(The DCR1476 is also available in a thin package, type code V. Please contact Customer Services for more information).

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DCR1476SY

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability
of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.

Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution
(PACs).

DEVICE CLAMPS

Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded
clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm
discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes.

Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839

HEATSINKS

The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.

http://www.dynexsemi.com

e-mail: [email protected]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.

All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

CUSTOMER SERVICE CENTRES

Mainland Europe Tel: [phone]. Fax: [phone]
North America Tel: [phone]. Fax: [phone].
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SALES OFFICES

Mainland Europe Tel: [phone]. Fax: [phone]
North America Tel: [phone]. Fax: [phone]. Toll Free: 1.888.33.DYNEX (39639) /

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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4647-6 Issue No. 6.0 July 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

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