Datasheet DCR1375SBA28, DCR1375SBA27, DCR1375SBA26, DCR1375SBA25, DCR1375SBA24 Datasheet (DYNEX)

DCR1375SBA

DCR1375SBA

Phase Control Thyristor

Advance Information

Replaces October 2000 version, DS4654-4.0 DS4654-5.0 July 2001

FEATURES

■ Double Side Cooling

■ High Surge Capability

■ Low Turn-on Losses

APPLICATIONS

■ High Voltage Power Converters

■ High Voltage Power Supplies

■ Motor Control

VOLTAGE RATINGS

Type Number Repetitive Peak

Voltages
V

DRM VRRM

V

DCR1375SBA28
DCR1375SBA27
DCR1375SBA26
DCR1375SBA25
DCR1375SBA24

Lower voltage grades available.

2800
2700
2600
2500
2400

Conditions

Tvj = 0˚ to 125˚C,
I

= I

RRM

, V
& V
& V

RRM tp

= 150mA,

= 10ms,

=

RSM

+ 100V

RRM

DRM

V

DRM

V

DSM

V

DRM

respectively

KEY PARAMETERS
V

DRM

I

T(AV)

I

TSM

dVdt 1000V/
dI/dt 500A/

2800V
2004A
35000A

µs

µs

Outline type code: MU140.

See Package Details for further information.

ORDERING INFORMATION

When ordering, select the required part number shown in the
Voltage Ratings selection table.

For example:

DCR1375SBA26

Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.

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Fig.1 Package outline

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DCR1375SBA

CURRENT RATINGS

T

= 60˚C unless stated otherwise.

case

Symbol Parameter Conditions

Double Side Cooled

I

T(AV)

I

T(RMS)

I

Mean on-state current

RMS value

T

Continuous (direct) on-state current

Half wave resistive load 2004 A

Single Side Cooled (Anode side)

I

T(AV)

I

T(RMS)

I

T

Mean on-state current

RMS value

Continuous (direct) on-state current

Half wave resistive load 1491 A

CURRENT RATINGS

T

= 80˚C unless stated otherwise.

case

Symbol Parameter Conditions

Double Side Cooled

UnitsMax.

- 3148 A

- 2846 A

- 2342 A

- 2009 A

UnitsMax.

I

T(AV)

I

T(RMS)

I

T

Mean on-state current

RMS value

Continuous (direct) on-state current

Single Side Cooled (Anode side)

I

T(AV)

I

T(RMS)

I

T

Mean on-state current

RMS value

Continuous (direct) on-state current

Half wave resistive load 1575 A

- 2475 A

- 2200 A

Half wave resistive load 1150 A

- 1805 A

- 1520 A

2/8

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SURGE RATINGS

DCR1375SBA

Symbol

I

TSM

2

tI

I

I

TSM

I2t

Surge (non-repetitive) on-state current

2

t for fusing

Surge (non-repetitive) on-state current

2

I

t for fusing 6.125 x 106A2s

Parameter

THERMAL AND MECHANICAL DATA

Symbol

R

th(j-c)

R

th(c-h)

Thermal resistance - junction to case

Thermal resistance - case to heatsink

Parameter

Conditions

10ms half sine; T

VR = 50% V

RRM

10ms half sine; T

VR = 0

Conditions Min. Max. Units

Double side cooled

Single side cooled

Clamping force 40kN
with mounting compound

= 125oC

case

- 1/4 sine

= 125oC

case

dc

Cathode dc
Double side

Single side

Max. Units

28 kA

6

3.92 x 10

A2s

35 kA

o

- 0.013

C/W

o

C/W- 0.021Anode dc

- 0.034oC/W

0.003

-

- 0.006

o

C/W

o

C/W

On-state (conducting) - 135

T

vj

T

stg

-

Virtual junction temperature

Storage temperature range

Clamping force

Reverse (blocking)

-

125

–55 125

36.0 44.0 kN

o

C

o

C

o

C

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DCR1375SBA

DYNAMIC CHARACTERISTICS

ParameterSymbol Conditions

I

RRM/IDRM

Peak reverse and off-state current At V

RRM/VDRM

dV/dt Maximum linear rate of rise of off-state voltage To 67% V

From 80% V

dI/dt

Rate of rise of on-state current

Gate source 20V, 20Ω
tr ≤ 1.0µs. Tj = 125oC.

V

T(TO)

r

T

t

gd

q

Threshold voltage At Tvj = 125oC

On-state slope resistance At Tvj = 125oC

= 67% V

V

Delay time

D

Rise time 0.5µs, Tj = 25oC

I

= 800A, tp = 1ms, Tj = 125˚C,

T

VR = 50V, dIRR/dt = 20A/µs,
VDR = 67% V

I

L

I

H

Latching current Tj = 25oC, VD = 5V

Holding current Tj = 25oC, V

, T

= 125oC

case

= 125oC.

DRM Tj

DRM

, Gate source 30V, 15Ω

DRM

, dVDR/dt = 20V/µs linear

DRM

= ∞

G-K

Repetitive 50Hz

Non-repetitive

Typ. Max. Units

- 150 mA

- 1000 V/µs

- 250 A/µs

- 500 A/µs

1.02-V

- 0.259 mΩ

-2µs

µs-400Turn-off timet

- 500 mA

- 260 mA

GATE TRIGGER CHARACTERISTICS AND RATINGS

P

V

V

V

I

P

V

I

GT

V

FGM

FGN

RGM

FGM

G(AV)

GT

GD

GM

Gate trigger voltage V

Gate trigger current

Gate non-trigger voltage At V

DRM

V

DRM

= 5V, T

= 5V, T

DRM Tcase

Peak forward gate voltage Anode positive with respect to cathode

Peak forward gate voltage Anode negative with respect to cathode

Peak reverse gate voltage

Peak forward gate current Anode positive with respect to cathode

Peak gate power See table, gate characteristics curve

Mean gate power

= 25oC

case

= 25oC

case

= 125oC

ConditionsParameterSymbol

Max. Units

3.0 V

350 mA

0.25 V

30 V

0.25 V

5V

10 A

150 W

10 W

4/8

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CURVES

DCR1375SBA

8000

Measured under pulse conditions
T

= 125˚C

j

7000

6000

- (A)

T

5000

4000

3000

2000

Instantaneous on-state current, I

1000

0

0.5 1.5 2.5 3.5

1.0 2.0 3.0
Instantaneous on-state voltage, V

- (V)

T

Fig.2 Maximum (limit) on-state characteristics

6000

5000

4000

3000

Power dissipation - (W)

2000

1000

0

0 1000 2000 3000 4000

Mean on-state current, I

T(AV)

- (A)

Fig.3 Dissipation curves

D.C.
Half wave
3 Phase
6 Phase

VTM Equation:­V

= A + Bln (IT) + C.IT+D.√I

TM

Where A = 1.149986

B = –0.09990939
C = 7.993598 x 10
D = 0.02290949

these values are valid for T

T

–5

= 125˚C for IT 500A to 6500A

j

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5/8

DCR1375SBA

10000

Conditions:
T

= 125˚C

j

V

= 100V

R

t

= 3ms - Trapezoidal

p

- (µC)

S

IT = 800A

1000

Total stored charge Q

I

T

dI/dt

100

0.1 1.0 10 100
Rate of decay of on-state current dI/dt - (A/µs)

Fig.4 Stored charge

100

Table gives pulse power PGM in Watts

10

- (V)

GT

1

Pulse width

Pulse frequency Hz

µs

50

100

150

200

150

500

150

1ms

150

10ms

20

Upper limit 95%

100
150
150
150
100

400
150
125
100

25

-

-

5W

10W

20W

100W

50W

Gate trigger voltage, V

Tj = 125˚C

Q

S

V

GD

Lower limit 5%

I

RR

0.1

Region of certain

triggering

= -40˚C

= 25˚C

j

j

T

T

1010.10.010.001

Gate trigger current, I

GT

- (A)

I

FGM

Fig.5 Gate characteristics

0.1

Anode side cooled

0.01

0.001

Thermal impedance - (˚C/W)

0.0001

Conduction

d.c.

Halfwave

3 phase 120˚

6 phase 60˚

Double side cooled

Effective thermal resistance

Junction to case ˚C/W

Double side

0.0130

0.0141

0.0170

0.0200

Anode side

0.0210

0.0221

0.0250

0.0280

1010.10.010.001

Time - (s)

Fig.6 Transient thermal impedance - junction to case

100

100

4.0
I2t = Î2 x t
2

75

50

I2t

3.5

I
t value - (A

3.0

s x 10

)

25

2.5

Peak half sine wave on-state current - (kA)

0

11012345

10 20 30

2.0

50

ms Cycles at 50Hz

Duration

Fig.7 Surge (non-repetitive) on-state current vs time (with

50% V

RSM

at T

= 125˚C)

case

2

2

6

6/8

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DCR1375SBA

PACKAGE DETAILS

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.

Hole Ø3.6 x 2.1 approx (In both electrodes)

Cathode tab

Ø1.5

Gate

Ø102 max

Ø63 ± 1

Ø63 ± 1
Ø92 max

Nominal weight: 1100g

Clamping force: 40kN ±10%

Lead length: 420mm

Lead terminal connector: M4 ring

Package outine type code: MU140

Cathode

33.5 ± 0.6

Anode

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DCR1375SBA

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability
of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.

Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution
(PACs).

DEVICE CLAMPS

Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded
clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm
discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes.

Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839

HEATSINKS

The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.

http://www.dynexsemi.com

e-mail: [e-mail]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.

All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

CUSTOMER SERVICE CENTRES

Mainland Europe Tel: [phone]. Fax: [phone]
North America Tel: [phone]. Fax: [phone].
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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4654-5 Issue No. 5.0 July 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

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