Datasheet DCR1374SBA18, DCR1374SBA16, DCR1374SBA14, DCR1374SBA12, DCR1374SBA10 Datasheet (DYNEX)

DCR1374SBA

DCR1374SBA

Phase Control Thyristor

Replaces February 2001 version, DS4597-5.1 DS4597-5.2 July 2001

FEATURES

■ Double Side Cooling

■ High Surge Capability

■ Low Turn-on Losses

APPLICATIONS

■ High Voltage Power Converters

■ DC Motor Control

■ High Voltage Power Supplies

VOLTAGE RATINGS

Part and Ordering

Number

DCR1374SBA18
DCR1374SBA16
DCR1374SBA14
DCR1374SBA12
DCR1374SBA10
DCR1374SBA08

Lower voltage grades available.

Repetitive Peak

Voltages

V

and V

DRM

V

1800
1600
1400
1200
1000

800

DRM

Conditions

T

= 0˚ to 125˚C,

vj

I

= I

RRM

, V
& V
& V

RRM tp

= 150mA,

RSM
RRM

DRM

V

DRM

V

DSM

V

DRM

respectively

= 10ms,
=
+ 100V

KEY PARAMETERS
V
I

T(AV)

I

TSM

DRM

(max) 2694A
(max) 50000A

1800V

dV/dt 1000V/
dI/dt 1000A/

Outline type code: MU140

(See Package Details for further information)

Fig. 1 Package outline

µs
µs

ORDERING INFORMATION

When ordering, select the required part number shown in the
Voltage Ratings selection table.

For example:

DCR1374SBA16

Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.

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DCR1374SBA

CURRENT RATINGS

T

= 60˚C unless stated otherwise.

case

Symbol

Double Side Cooled

I

T(AV)

I

T(RMS)

I

T

Mean on-state current

RMS value

Continuous (direct) on-state current

Single Side Cooled

I

T(AV)

I

T(RMS)

I

T

T

= 80˚C unless stated otherwise.

case

Mean on-state current

RMS value

Continuous (direct) on-state current

Symbol

Double Side Cooled

Parameter

Parameter

Test Conditions

Half wave resistive load

Half wave resistive load

Test Conditions

Max.

2694

-

-

4230

3682

1965

-

-

3086

2534

Max.

Units

A

A

A

A

A

A

Units

I

T(AV)

I

T(RMS)

I

T

Mean on-state current

RMS value

Continuous (direct) on-state current

Single Side Cooled

I

T(AV)

I

T(RMS)

I

T

Mean on-state current

RMS value

Continuous (direct) on-state current

Half wave resistive load

Half wave resistive load

2084

-

-

3275

2770

1500

-

-

2350

1875

A

A

A

A

A

A

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SURGE RATINGS

DCR1374SBA

Symbol

I

TSM

I2t

I

TSM

I2t

Surge (non-repetitive) on-state current

2

t for fusing

I

Surge (non-repetitive) on-state current

2

t for fusing

I

Parameter

THERMAL AND MECHANICAL RATINGS

Symbol

R

th(j-c)

R

th(c-h)

Thermal resistance - junction to case

Thermal resistance - case to heatsink

Parameter

Test Conditions

10ms half sine, T

= 50% V

V

R

10ms half sine, T

V

R

case

- 1/4 sine

RRM

case

= 0

= 125˚C

= 125˚C

Test Conditions

Double side cooled DC

Single side cooled Anode DC

Cathode DC

Clamping force 40.0kN Double side

(with mounting compound) Single side

Min.

-

-

-

-

-

Max.

40

8 x 10

50

12.5 x 10

Max.

0.013

0.021

0.034

0.003

0.006

Units

kA

2

6

s

A

kA

2

6

s

A

Units

˚CW

˚CW

˚CW

˚CW

˚CW

T

vj

Virtual junction temperature

On-state (conducting)

Reverse (blocking)

T

stg

F

m

Storage temperature range

Clamping force

-

-

–55

36.0

135

125

125

44.0

˚C

˚C

˚C

kN

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DCR1374SBA

SURGE RATINGS

Symbol

I

RRM/IRRM

dV/dt

dI/dt

V

T(TO)

r

T

t

gd

t

q

Parameter

Peak reverse and off-state current

Max. linear rate of rise of off-state voltage

Rate of rise of on-state current

Threshold voltage

On-state slope resistance

Delay time

Turn-off time

Test Conditions

, T

At V

RRM/VDRM

To 67% V

DRM

From 67% V

Gate source 20V, 20Ω,

= 125˚C

case

, Tj = 125˚C

to 4600A Repetitive 50Hz

DRM

Non-repetitive

tr ≤ 0.5µs, Tj = 125˚C

= 125˚C

At T

vj

= 125˚C

At T

vj

= 67% V

V

D

= 0.5µs, Tj = 25˚C

t

r

= 800A, tp = 1ms, Tj =125˚C,

I

T

= 50V, dIRR/dt = 20A/µs,

V

R

V

= 67% V

DR

, gate source 30V, 15Ω

DRM

,

DRM

Min.

-

-

-

-

-

-

-

300

150

500

1.5

Units

mA

V/µs

A/µs

A/µs

V

mΩ

ns

µs

Max.

1000

1000

0.92

0.119

1

I

L

I

H

Latching current

Holding current

Note 1: Typical value

/dt = 20V/µs linear

dV

DR

= 25˚C, VD = 10V

T

j

= 25˚C, V

T

j

G–K

= ∞

-

350

-

175

mA

mA

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GATE TRIGGER CHARACTERISTICS AND RATINGS

DCR1374SBA

Symbol

V

GT

I

GT

V

GD

V

FGM

V

FGN

V

RGM

I

FGM

P

GM

P

G(AV)

CURVES

8000

7000

- (A)

6000

T

Parameter

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Peak forward gate voltage

Peak forward gate voltage

Peak reverse gate voltage

Peak forward gate current

Peak gate power

Mean gate power

Measured under pulse conditions
T

= 125˚C

j

Test Conditions

V

DRM

V

DRM

At V

= 5V, T

= 5V, T

DRM Tcase

= 25oC

case

= 25oC

case

= 125oC

Anode positive with respect to cathode

Anode negative with respect to cathode

-

Anode positive with respect to cathode

See table fig. 5

-

5000

4000

Max.

3

350

0.25

30

0.25

5

30

150

10

Units

V

mA

V

V

V

V

A

W

W

5000

4000

3000

2000

Instantaneous on-state current, I

1000

0

0.5 1.0 1.5 2.0
Instantaneous on-state voltage, V

Fig.2 Maximum (limit) on-state characteristics Fig.3 Power dissipation

VTM EQUATION

VTM = A + Bln (IT) + C.IT+D.√I

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3000

2000

Mean power dissipation - (W)

1000

0

0 1000 2000 3000 4000

- (V)

T

Where A = 0.4846543

B = 8.508026 x 10

T

C = 0.05408984
D = 1.863019 x 10

–5

–3

Mean on-state current I

T(AV)

d.c.
Half wave
3 phase
6 phase

- (A)

these values are valid for Tj = 125˚C for IT 500A to 8000A

5/9

DCR1374SBA

10000

Conditions:

= 125˚C

T

j

I

= 800A

T

= 100V

V

R

t

= 1ms - Trapezoidal

p

- (µC)

S

1000

I

T

Total stored charge Q

dI/dt

100

0.1 1.0 10 100
Rate of decay of on-state current dI/dt - (A/µs)

Fig.4 Stored charge Fig.5 Gate characteristics

100

Table gives pulse power PGM in Watts

Pulse width

- (V)

10

GT

1

Q

S

I

RR

Gate trigger voltage, V

V

GD

Pulse frequency Hz

µs
100
200
500
1ms

10ms

50
150
150
150
150

20

Upper limit 95%

100
150
150
150
100

-

400
150
125
100

25

-

= 125˚C

j

T

Lower limit 5%

10W

5W

= –40˚C

j

T

= 25˚C

j

T

Region of certain

50W

20W

triggering

100W

0.1

1010.10.010.001

Gate trigger current I

GT

- (A)

100

I2t = Î2 x t
2

75

50

8

7

6

25

30

5

4

3

50

I2t

Peak half sine wave on-state current - (kA)

0

11012345

ms Cycles at 50Hz

10 20

Duration

Fig.6 Surge (non-repetitive) on-state current vs time (with

50% V

RRM

at T

case

125˚C)

I

2

t value - (A

0.001

Thermal impedance - (˚C/W)

2

s x 10

6

)

0.0001

0.1

Anode side cooled

0.01

Conduction

d.c.

Halfwave

3 phase 120˚

6 phase 60˚

0.001

Double side cooled

Effective thermal resistance

Junction to case ˚C/W

Double side

0.0130

0.0141

0.0170

0.0200

Anode side

0.0210

0.0221

0.0250

0.0280

1010.10.01

Time - (s)

Fig.7 Maximum (limit) transient thermal impedance -

junction to case (˚C/W)

100

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DCR1374SBA

PACKAGE DETAILS

For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.

Hole Ø3.6 x 2.1 approx (In both electrodes)

Cathode tab

Ø1.5

Gate

Ø102 max

Ø63 ± 1

Ø63 ± 1
Ø92 max

Nominal weight: 1100g

Clamping force: 40kN ±10%

Lead length: 420mm

Lead terminal connector: M4 ring

Package outine type code: MU140

Cathode

33.5 ± 0.6

Anode

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DCR1374SBA

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability
of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.

Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution
(PACs).

DEVICE CLAMPS

Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded
clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm
discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes.

Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839

HEATSINKS

The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.

http://www.dynexsemi.com

e-mail: [e-mail]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.

All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

CUSTOMER SERVICE CENTRES

Mainland Europe Tel: [phone]. Fax: [phone]
North America Tel: [phone]. Fax: [phone].
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SALES OFFICES

Mainland Europe Tel: [phone]. Fax: [phone]
North America Tel: [phone]. Fax: [phone]. Toll Free: 1.888.33.DYNEX (39639) /

Tel: [phone]. Fax: [phone].
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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4597-4 Issue No. 5.2 July 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

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