Datasheet DCR1279SD48, DCR1279SD47, DCR1279SD46, DCR1279SD45, DCR1279SD44 Datasheet (DYNEX)

DCR1279SD

DCR1279SD

Phase Control Thyristor

Advance Information

Replaces March 1998 version, DS4643-3.2 DS4643-4.0 January 2000

APPLICATIONS

■ High Power Drives

■ High Voltage Power Supplies

■ DC Motor Control

FEATURES

■ Double Side Cooling

■ High Surge Capability

■ High Mean Current

■ Fatigue Free

VOLTAGE RATINGS

Type Number Repetitive Peak

Voltages
V

DRM VRRM

V

DCR1279SD48
DCR1279SD47
DCR1279SD46
DCR1279SD45
DCR1279SD44

Lower voltage grades available.

4800
4700
4600
4500
4400

Conditions

Tvj = 0˚ to 125˚C,
I

= I

, V
& V
& V

RRM

RRM tp

= 150mA,

= 10ms,

=

RSM

+ 100V

RRM

DRM

V

DRM

V

DSM

V

DRM

respectively

KEY PARAMETERS

V

DRM

I

T(AV)

I

TSM

dVdt* 300V/
dI/dt 200A/µs

*Higher dV/dt selections available

Outline type code: D.

See package outline for further information.

4800V

1088A

15000A

µs

CURRENT RATINGS

T

= 60˚C unless stated otherwise.

case

Symbol Parameter Conditions

Double Side Cooled

I

T(AV)

I

T(RMS)

I

T

Mean on-state current

RMS value

Continuous (direct) on-state current

Single Side Cooled (Anode side)

I

T(AV)

I

T(RMS)

I

T

Mean on-state current

RMS value

Continuous (direct) on-state current

Half wave resistive load, 1088 A

Half wave resistive load 762 A

UnitsMax.

- 1709 A

- 1574 A

- 1197 A

- 1034 A

1/9

DCR1279SD

CURRENT RATINGS

T

= 80˚C unless stated otherwise.

case

Symbol Parameter Conditions

Double Side Cooled

I

T(AV)

I

T(RMS)

Mean on-state current

RMS value

I

T

Continuous (direct) on-state current

Half wave resistive load, 860 A

Single Side Cooled (Anode side)

I

T(AV)

I

T(RMS)

Mean on-state current

RMS value

I

T

Continuous (direct) on-state current

Half wave resistive load 590 A

SURGE RATINGS

Symbol

I

TSM

I2tI

Parameter

Surge (non-repetitive) on-state current

2

t for fusing

10ms half sine; T

= 50% V

V

R

Conditions

- 1350 A

- 1055 A

- 930 A

- 860 A

Max. Units

case

- 1/4 sine

RRM

= 125oC

12.0 kA

0.72 x 10

6

UnitsMax.

A2s

I

TSM

I2tI

Surge (non-repetitive) on-state current

2

t for fusing 1.12 x 106A2s

THERMAL AND MECHANICAL DATA

Symbol

R

th(j-c)

R

th(c-h)

T

vj

T

stg

Thermal resistance - junction to case

Thermal resistance - case to heatsink

Virtual junction temperature

Storage temperature range

Parameter

10ms half sine; T

V

R

= 0

= 125oC

case

15.0 kA

Conditions Min. Max. Units

Double side cooled - 0.020

dc

Single side cooled

- 0.044

0.004

-

- 0.008

Clamping force 22.0kN
with mounting compound

Cathode dc
Double side

Single side

On-state (conducting) - 135

-

Reverse (blocking)

125

-55 125

o

C/W

o

C/W- 0.036Anode dc

o

C/W

o

C/W

o

C/W

o

o

o

C

C

C

2/9

-

Clamping force

22.0 24.0 kN

DYNAMIC CHARACTERISTICS

DCR1279SD

Symbol

I

RRM/IDRM

Peak reverse and off-state current At V

Parameter

RRM/VDRM

dV/dt Maximum linear rate of rise of off-state voltage To 67% V

From 67% V

dI/dt

Rate of rise of on-state current

Gate source 10V, 5Ω
tr ≤ 0.5µs, Tj = 125oC

V

T(TO)

r

T

t

gd

I

L

I

H

Threshold voltage At Tvj = 125oC

On-state slope resistance At Tvj = 125oC

V

= 67% V

Delay time

D

tr = 0.5µs, Tj = 25oC

Latching current Tj = 25oC, VD = 5V

Holding current Tj = 25oC, R

GATE TRIGGER CHARACTERISTICS AND RATINGS

Conditions Typ. Max. Units

, T

= 125oC

case

= 125oC. Gate open circuit.

DRM Tj

to 1000A

DRM

Repetitive 50Hz

Non-repetitive

- 150 mA

- 300 V/µs

- 100 A/µs

- 200 A/µs

- 0.587 mΩ

, Gate source 30V, 15Ω

DRM

- 2.5 µs

300 1000 mA

g-k

= ∞

- 500 mA

ConditionsParameterSymbol

1.14-V

Max. Units

P

V

V

V

V

I

V

I

FGM

P

G(AV)

GT

GT

GD

FGM

FGN

RGM

GM

Gate trigger voltage V

Gate trigger current

Gate non-trigger voltage At V

DRM

V

DRM

= 5V, T

= 5V, T

DRM Tcase

= 25oC

case

= 25oC

case

= 125oC

Peak forward gate voltage Anode positive with respect to cathode

Peak forward gate voltage Anode negative with respect to cathode

Peak reverse gate voltage

Peak forward gate current Anode positive with respect to cathode

Peak gate power See table, fig.4

Mean gate power

4.0 V

400 mA

0.25 V

30 V

0.25 V

5V

10 A

150 W

5W

3/9

DCR1279SD

CURVES

3000

2500

2000

- (A)

T

1500

Measured under pulse conditions

Tj = 125˚C

Instantaneous on-state current I

1000

500

0

1.0 1.5 2.0 2.5
Instantaneous on-state voltage V

Fig.1 Maximum (limit) on-state characteristics

- (V)

T

3.0

4/9

3500

DCR1279SD

d.c.

3000

6 phase

2500

2000

1500

Mean power dissipation - (W)

Half wave

3 phase

1000

500

0

0 500 1000 1500 2000

Mean on-state current I

T(AV)

- (A)

Fig.2 Dissipation curves

5/9

DCR1279SD

100

V

- (V)

GT

- (µC)

S

10000

Conditions:
T

= 125˚C

j

Q

is total integral stored charge

S

1000

Total stored charge Q

100

0.1 1.0 10 100
Rate of decay of on-state current dI/dt - (A/µs)

Table gives pulse power PGM in Watts

Pulse frequency Hz

100

50

150

150

150

150

150

150

100

150

20

-

FGM

10

Pulse width

µs
100
200
500

1ms

10ms

Fig.3 Stored charge

400
150
125
100

25

-

t

p

2W

dI/dt

I

5W

T

10W

IT = 1000A

Q

S

I

RM

50W

20W

100W

1

Gate trigger voltage V

0.1

Tj = 25˚C

Tj = 125˚C

Upper limit 99%

Lower limit 1%

Gate trigger current I

Fig.4 Gate characteristics

GT

- (A)

Tj = -40˚C

1010.10.010.001

I

FGM

6/9

1.0
Conduction

Effective thermal resistance

Double side

d.c.

Halfwave

3 phase 120˚

6 phase 60˚

0.1

0.01

Thermal impedance - (˚C/W)

Junction to case ˚C/W

Anode side

0.020

0.022

0.024

0.027

0.036

0.038

0.040

0.043

DCR1279SD

Anode side cooled

Double side cooled

0.001
Time - (s)

Fig.5 Maximum (limit) transient thermal impedance - junction to case

40

I2t = Î2 x t
2

30

20

I2t

10

Peak half sine wave on-state current - (kA)

0

11012345

ms Cycles at 50Hz

Duration

Fig.6 Surge (non-repetitive) on-state current vs time (with 50% V

RRM

at T

50

case

800

700

600

500

400

125˚C)

1010.10.010.001

I

2

t value - (A

2

s x 10

3

)

7/9

DCR1279SD

PACKAGE DETAILS

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.

2 holes Ø3.6 x 2.1 deep (One each side)

Cathode tab

Cathode

Ø76 max

Ø48 nom

Ø2.8

27.0

Gate

25.4

Ø48 nom

Nominal weight: 500g

Clamping force: 22kN ±10%

Lead length: 420mm

Lead terminal connector: M4 ring

Package outine type code: D

Anode

ASSOCIATED PUBLICATIONS

Title Application Note

Number

Calculating the junction temperature or power semiconductors AN4506
Gate triggering and the use of gate characteristics AN4840
Recommendations for clamping power semiconductors AN4839
The effect of temperature on thyristor performance AN4870
Thyristor and diode measurement with a multi-meter AN4853
Turn-on performance of thyristors in parallel AN4999
Use of V

, rT on-state characteristic AN5001

TO

8/9

DCR1279SD

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc­tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.

Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).

DEVICE CLAMPS

Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre­loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm

Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839

HEATSINKS

Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.

http://www.dynexsemi.com

e-mail: [email protected]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

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© Dynex Semiconductor 2000 Publication No. DS4643-4 Issue No. 4.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

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