Datasheet DCR1021SF65, DCR1021SF64, DCR1021SF63, DCR1021SF62, DCR1021SF61 Datasheet (DYNEX)

DCR1021SF

1/11

www.dynexsemi.com

FEATURES

■ Double Side Cooling

■ High Surge Capability

■ Low Inductance Internal Construction

APPLICATIONS

■ High Power Converters

■ DC Motor Control

■ High Voltage Power Supplies

VOLTAGE RATINGS

ORDERING INFORMATION

When ordering, select the required part number shown in the
Voltage Ratings selection table.

For example:

DCR1021SF63

Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.

KEY PARAMETERS
V

DRM

6500V

I

T(AV)

(max) 840A

I

TSM

(max) 14000A

dV/dt 1000V/

µs

dI/dt 100A/

µs

DCR1021SF

Phase Control Thyristor

Target Information

DS5436-1.0 March 2001

Conditions

T

vj

= 0˚ to 125˚C,

I

DRM

= I

RRM

= 150mA,

V

DRM

, V

RRM tp

= 10ms,

V

DSM

& V

RSM

=

V

DRM

& V

RRM

+ 100V

respectively

Lower voltage grades available.

6500
6400
6300
6200
6100
6000

DCR1021SF65
DCR0121SF64
DCR1021SF63
DCR1021SF62
DCR1021SF61
DCR1021SF60

Part and Ordering

Number

Repetitive Peak

Voltages

V

DRM

and V

DRM

V

Fig. 1 Package outline

Outline type code: F

(See Package Details for further information)

DCR1021SF

2/11

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Symbol

I

T(AV)

I

T(RMS)

I

T

I

T(AV)

I

T(RMS)

I

T

CURRENT RATINGS

T

case

= 60˚C unless stated otherwise.

Test Conditions

Half wave resistive load

-

-

Half wave resistive load

-

-

Units

A

A

A

A

A

A

Max.

840

1320

1230

610

960

845

Parameter

Mean on-state current

RMS value

Continuous (direct) on-state current

Mean on-state current

RMS value

Continuous (direct) on-state current

Single Side Cooled

Double Side Cooled

Symbol

I

T(AV)

I

T(RMS)

I

T

I

T(AV)

I

T(RMS)

I

T

T

case

= 80˚C unless stated otherwise.

Test Conditions

Half wave resistive load

-

-

Half wave resistive load

-

-

Units

A

A

A

A

A

A

Max.

670

1050

960

480

750

650

Parameter

Mean on-state current

RMS value

Continuous (direct) on-state current

Mean on-state current

RMS value

Continuous (direct) on-state current

Single Side Cooled

Double Side Cooled

DCR1021SF

3/11

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Parameter

Surge (non-repetitive) on-state current

I

2

t for fusing

Surge (non-repetitive) on-state current

I

2

t for fusing

Test Conditions

10ms half sine, T

case

= 125˚C

V

R

= 50% V

RRM

- 1/4 sine

10ms half sine, T

case

= 125˚C

V

R

= 0

Symbol

I

TSM

I2t

I

TSM

I2t

SURGE RATINGS

Units

kA

A

2

s

kA

A

2

s

Max.

11.0

0.6 x 10

6

14.0

0.98 x 10

6

Parameter

Thermal resistance - junction to case

Thermal resistance - case to heatsink

Virtual junction temperature

Storage temperature range

Clamping force

Test Conditions

Double side cooled DC

Single side cooled Anode DC

Cathode DC

Clamping force 19.5kN Double side

(with mounting compound) Single side

On-state (conducting)

Reverse (blocking)

THERMAL AND MECHANICAL RATINGS

Symbol

R

th(j-c)

R

th(c-h)

T

vj

T

stg

F

m

Units

˚CW

˚CW

˚CW

˚CW

˚CW

˚C

˚C

˚C

kN

Max.

0.022

0.38

0.52

0.004

0.008

135

125

125

22.0

Min.

-

-

-

-

-

-

-

–55

18.0

DCR1021SF

4/11

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Parameter

Peak reverse and off-state current

Max. linear rate of rise of off-state voltage

Rate of rise of on-state current

Threshold voltage

On-state slope resistance

Delay time

Turn-off time

Latching current

Holding current

Test Conditions

At V

RRM/VDRM

, T

case

= 125˚C

To 67% V

DRM

, Tj = 125˚C

From 67% V

DRM

,

Repetitive 50Hz

Gate source 30V, 15Ω,

Non-repetitive

tr ≤ 0.5µs, Tj = 125˚C

At T

vj

= 125˚C

At T

vj

= 125˚C

V

D

= 67% V

DRM

, gate source 30V, 15Ω

t

r

= 0.5µs, Tj = 25˚C

I

T

= 1000A, tp = 1ms, Tj =125˚C,

V

R

= 100V, dIRR/dt = 10A/µs,

V

DR

= 67% V

DRM

,

dV

DR

/dt = 20V/µs linear

T

j

= 25˚C, VD = 10V

T

j

= 25˚C, V

G–K

= ∞

Symbol

I

RRM/IRRM

dV/dt

dI/dt

V

T(TO)

r

T

t

gd

t

q

I

L

I

H

SURGE RATINGS

Units

mA

V/µs

A/µs

A/µs

V

mΩ

µs

µs

mA

mA

Max.

150

1000

30

100

1.2

0.98

1.5

-

600

200

Min.

-

-

-

-

-

-

0.5

1500

-

-

DCR1021SF

5/11

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Parameter

Gate trigger voltage

Gate trigger current

Gate non-trigger voltage

Peak forward gate voltage

Peak forward gate voltage

Peak reverse gate voltage

Peak forward gate current

Peak gate power

Mean gate power

Test Conditions

V

DRM

= 5V, T

case

= 25oC

V

DRM

= 5V, T

case

= 25oC

At V

DRM Tcase

= 125oC

Anode positive with respect to cathode

Anode negative with respect to cathode

-

Anode positive with respect to cathode

See table fig. 7

-

Symbol

V

GT

I

GT

V

GD

V

FGM

V

FGN

V

RGM

I

FGM

P

GM

P

G(AV)

GATE TRIGGER CHARACTERISTICS AND RATINGS

Max.

3

300

0.25

30

0.25

5

10

150

5

Units

V

mA

V

V

V

V

A

W

W

Fig.2 Maximum (limit) on-state characteristics

0

500

1000

1500

2000

2500

3000

11.5 22.5 33.5 4
Instantaneous on-state voltage, V

T

- (V)

Instantaneous on-state current, I

T

- (A)

Tj = 125˚C

DCR1021SF

6/11

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Fig.3 Sine wave power dissipation curves

Fig.4 Sine wave power dissipation curves

Fig.5 Square wave power dissipation curves Fig.6 Square wave power dissipation curves

0

500

1000

1500

2000

2500

3000

0 200 400 600 800 1000

Mean on-state current, I

T(AV)

- (A)

Mean power dissipation - (W)

180˚
120˚

90˚
60˚
30˚
15˚

0

100

200

300

400

500

600

700

800

0 100 200 300 400

Mean on-state current, I

T(AV)

- (A)

Mean power dissipation - (W)

180˚
120˚

90˚
60˚
30˚
15˚

0

500

1000

1500

2000

2500

3000

0 100 200 300 400 500 600 700 800 900 1000

Mean on-state current, I

T(AV)

- (A)

Mean power dissipation - (W)

360˚
180˚
120˚

90 ˚
60˚
30˚

0

100

200

300

400

500

600

700

800

0 50 100 150 200 250 300 350 400 450 500

Mean on-state current, I

T(AV)

- (A)

Mean power dissipation - (W)

360˚
180˚
120˚
90˚
60˚
30˚

DCR1021SF

7/11

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Fig.7 Gate characteristics

Fig.8 Gate characteristics

Gate trigger current, IGT - (A)

Gate trigger voltage, V

GT

- (V)

0

1

2

3

4

5

6

7

8

9

10

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Tj = 125˚C

Tj = 25˚C

Tj = -40˚C

Preferred gate drive area

Upper limit
Lower limit

Pulse Width

µs
100
200
500

1000

10000

50
150
150
150
150

20

100
150
150
150
100

-

400
150
125
100

25

-

Frequency Hz

Table gives pulse power P

GM

in Watts

Gate trigger current, IGT - (A)

Gate trigger voltage, V

GT

- (V)

01234567

8

910

0

5

10

15

20

25

Upper Limit
Lower Limit
5W
10W
20W
50W
100W

DCR1021SF

8/11

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Fig.9 Stored charge Fig.10 Surge (non-repetitive) on-state current vs time (with

50% V

RRM

at T

case

125˚C)

Fig.12 Maximum (limit) transient thermal impedance -

junction to case (˚C/W)

10000

1000

100

Total stored charge, Q

RA3

- (µC)

0.1 1.0

10

Rate of decay of on-state current, dI/dt - (A/µs)

100

Max

Min

Conditions:
T

j

= 125˚C

I

T

= 550A

V

R

= 100V

I

RR

Q

RA3

I

T

dI/dt

25% I

RR

0.1

0.01

0.001

Thermal Impedance - junction to case - (˚C/W)

0.001 0.01 0.1 1.0 10
Time - (s)

Anode side cooled

Double side

cooled

Conduction

d.c.

Halfwave

3 phase 120˚

6 phase 60˚

Effective thermal resistance

Junction to case ˚C/W

Double side

0.022

0.024

0.026

0.027

Anode side

0.038

0.040

0.042

0.043

Fig.11 Multiple cycle surge current

0

5

10

15

20

25

30

12345678910

Pulse width - (ms)

Peak half sine on-state current - (kA)

0

0.15

0.3

0.45

0.6

0.75

0.9

I

2

t value - ( A

2

s x 10

6

)

I

TSM

I2t

I2t = Î2 x t
2

0

2

4

6

8

10

12

14

0102030405060

Number of cycles @ 50Hz

Peak half sine wave on-state current - (kA)

DCR1021SF

9/11

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PACKAGE DETAILS

For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.

2 holes Ø3.6x2.0 deep (in both electrodes)

Ø48 nom

27.0

25.4

Ø1.5

Cathode

Gate

Anode

Ø48 nom

Ø76 max

Nominal weight: 500g

Clamping force: 19.6kN ± 10%

Lead length: 420mm

Lead terminal connector: M4 ring

Package outline type code: F

Cathode tab

DCR1021SF

10/11

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POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and
current capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.

Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
Solution (PACs).

DEVICE CLAMPS

Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre­loaded clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and
‘E’ 30mm discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes.

Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839

HEATSINKS

The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise
the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is
available on request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.

ASSOCIATED PUBLICATIONS

Title Application Note

Number

Calculating the junction temperature of power semiconductors AN4506
Recommendations for clamping power semiconductors AN4839
Thyristor and diode measurement with a multi-meter AN4853
Use of V

TO

, rT on-state characteristic AN5001

DCR1021SF

11/11

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CUSTOMER SERVICE CENTRES

Central Europe Tel: [phone]. Fax: Fax: [phone]
North America Tel: [phone]. Fax: [phone]
UK, Scandinavia & Rest Of World Tel: [phone]. Fax: [phone]

SALES OFFICES

Central Europe Tel: [phone]. Fax: [phone]
North America Tel: [phone]. Fax: [phone]. Toll Free: 1.888.33.DYNEX (39639) /

Tel: [phone]. Fax: [phone].
UK, Scandinavia & Rest Of World Tel: [phone]. Fax: [phone]

These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS5436-1 Issue No. 1.0 March 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

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Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
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