Datasheet DCR1003SF14, DCR1003SF18, DCR1003SF17, DCR1003SF16, DCR1003SF15 Datasheet (DYNEX)

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DCR1003SF

FEATURES

■ Double Side Cooling

■ High Surge Capability

■ Low Turn-on Losses

APPLICATIONS

■ High Power Converters

■ High Voltage Power Supplies

■ DC Motor Control

VOLTAGE RATINGS

ORDERING INFORMATION

When ordering, select the required part number shown in the
Voltage Ratings selection table.

For example:

DCR1003SF18

Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.

KEY PARAMETERS
V

DRM

1800V

I

T(AV)

1511A

I

TSM

26250A

dVdt* 1000V/

µs

dI/dt 1000A/

µs

*Higher dV/dt selections available

DCR1003SF

Phase Control Thyristor

Advance Information

Replaces January 2000 version, DS4548-3.2 DS4645-6.0 July 2001

Outline type code: F

See Package Details for further information.

Fig. 1 Package outline

DCR1003SF18
DCR1003SF17
DCR1003SF16
DCR1003SF15
DCR1003SF14

Conditions

Tvj = 0˚ to 125˚C,
I

DRM

= I

RRM

= 100mA,

V

DRM

, V

RRM tp

= 10ms,

V

DSM

& V

RSM

=

V

DRM

& V

RRM

+ 100V

respectively

Lower voltage grades available.

Type Number Repetitive Peak

Voltages
V

DRM VRRM

V

1800
1700
1600
1500
1400

2/8

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DCR1003SF

CURRENT RATINGS

T

case

= 80˚C unless stated otherwise.

Symbol Parameter Conditions

Double Side Cooled

I

T(AV)

Mean on-state current

I

T(RMS)

RMS value

I

T

Continuous (direct) on-state current

Single Side Cooled (Anode side)

I

T(AV)

Mean on-state current

I

T(RMS)

RMS value

I

T

Continuous (direct) on-state current

UnitsMax.

Half wave resistive load 1180 A

- 1852 A

- 1600 A

Half wave resistive load 830 A

- 1300 A

- 1050 A

CURRENT RATINGS

T

case

= 60˚C unless stated otherwise.

Symbol Parameter Conditions

Double Side Cooled

I

T(AV)

Mean on-state current

I

T(RMS)

RMS value

I

T

Continuous (direct) on-state current

Single Side Cooled (Anode side)

I

T(AV)

Mean on-state current

I

T(RMS)

RMS value

I

T

Continuous (direct) on-state current

UnitsMax.

Half wave resistive load 1511 A

- 2374 A

- 2124 A

Half wave resistive load 1069 A

- 1680 A

- 1411 A

3/8

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DCR1003SF

SURGE RATINGS

Conditions

10ms half sine; T

case

= 125oC

VR = 50% V

RRM

- 1/4 sine

10ms half sine; T

case

= 125oC

VR = 0

Max. Units

Symbol

Parameter

I

TSM

Surge (non-repetitive) on-state current

I

2

tI

2

t for fusing

I

TSM

Surge (non-repetitive) on-state current

I2t

I

2

t for fusing 3.44 x 106A2s

26.25 kA

2.21 x 10

6

A2s

21.0 kA

THERMAL AND MECHANICAL DATA

dc

Conditions Min. Max. Units

o

C/W- 0.038Anode dc

Clamping force 19.5kN
with mounting compound

Thermal resistance - case to heatsink

R

th(c-h)

0.004

Double side

-

125

o

C

T

vj

Virtual junction temperature

T

stg

Storage temperature range

Reverse (blocking)

Single side

-

Thermal resistance - junction to case

R

th(j-c)

Single side cooled

Symbol

Parameter

Clamping force

18.0 22.0 kN

–55 125

o

C

-

On-state (conducting) - 135

o

C

- 0.008oC/W

o

C/W

Cathode dc

- 0.052

o

C/W

Double side cooled

- 0.022oC/W

4/8

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DCR1003SF

DYNAMIC CHARACTERISTICS

ParameterSymbol Conditions Typ. Max. Units

GATE TRIGGER CHARACTERISTICS AND RATINGS

V

DRM

= 5V, T

case

= 25oC

ConditionsParameterSymbol

V

GT

Gate trigger voltage V

DRM

= 5V, T

case

= 25oC

I

GT

Gate trigger current

V

GD

Gate non-trigger voltage At 67% V

DRM Tcase

= 125oC

V

FGM

Peak forward gate voltage Anode positive with respect to cathode

V

FGN

Peak forward gate voltage Anode negative with respect to cathode

V

RGM

Peak reverse gate voltage

I

FGM

Peak forward gate current Anode positive with respect to cathode

P

GM

Peak gate power See table, gate characteristics curve

P

G(AV)

Mean gate power

3.5 V

200 mA

0.25 V

30 V

0.25 V

5V

30 A

150 W

10 W

Max. Units

I

GD

Gate non-trigger current At 67% V

DRM Tcase

= 125oC

-A

I

RRM/IDRM

Peak reverse and off-state current At V

RRM/VDRM

, T

case

= 125oC

From 67% V

DRM

to 1000A
Gate source 1.5A
tr = 0.5µs. Tj = 125oC.

dV/dt Maximum linear rate of rise of off-state voltage To 67% V

DRM Tj

= 125oC.

- 100 mA

- 1000 V/µs

Repetitive 50Hz

- 500 A/µs

Non-repetitive

- 1000 A/µs

Rate of rise of on-state current

dI/dt

V

T(TO)

Threshold voltage At Tvj = 125oC

r

T

On-state slope resistance At Tvj = 125oC

t

gd

Delay time

0.86-V

- 0.25 mΩ

- 1.1 µs

V

D

= 67% V

DRM

, Gate source 30V, 15Ω

Rise time 0.5µs, Tj = 25oC

I

T

= 800A, tp = 1ms, Tj = 125˚C,

V

RM

= 50V, dIRR/dt = 20A/µs,

VDR = 50% V

DRM

, dVDR/dt = 20V/µs linear

µs200110Turn-off timet

q

I

L

Latching current Tj = 25oC, VD = 5V

I

H

Holding current Tj = 25oC, R

g-k

= ∞

- 350 mA

- 230 mA

5/8

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DCR1003SF

CURVES

Fig.2 Maximum (limit) on-state characteristics

Fig.3 Dissipation curves

0.5 1.0 1.5 2.0 2.5
Instantaneous on-state voltage, V

T

- (V)

0

1000

2000

3000

4000

5000

Measured under
pulse conditions

Instantaneous on-state current, I

T

- (A)

1

2

1: Tj = 125˚C Min
2: T

j

= 125˚C Max

Mean current, I

T(AV)

- (A)

Power loss - (W)

0

500

1000

1500

2000

2500

3000

0 500 1000 1500 2000 2500

D.C.
Half wave
3 Phase
6 Phase

VTM Equation:­V

TM

= A + Bln (IT) + C.IT+D.√I

T

Where A = –1.191257

B = 0.4149874
C = 3.623888 x 10

–4

D = –0.02991257

these values are valid for T

j

= 125˚C for IT 500A to 5000A

6/8

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DCR1003SF

Fig.6 Transient thermal impedance - junction to case

Fig.7 Surge (non-repetitive) on-state current vs time (with

50% V

RRM

at T

case

= 125˚C)

0.1

0.01

0.001

Thermal Impedance - Junction to case - (˚C/W)

0.001 0.01 0.1 1.0 10
Time - (s)

Anode side cooled

Double side cooled

Conduction Effective thermal resistance

Junction to case ˚C/W

Double side

0.022

0.024

0.026

0.027

Anode side

0.038

0.040

0.042

0.043

d.c.

Halfwave

3 phase 120˚

6 phase 60˚

40

30

20

10

0

Peak half sine wave on-state current - (kA)

11012345

50

ms Cycles at 50Hz

Duration

0.5

1.0

I

2

t value - (A

2

s x 10

6

)

I2t

I2t = Î2 x t
2

1.5

50

2.0

10 20 30

Fig.4 Stored charge

Fig.5 Gate characteristics

0.1 1.0 10 100
Rate of decay of on-state current, dI/dt - (A/µs)

10000

1000

100

Total stored charge, Q

S

- (µC)

Conditions:
QS is total integral stored charge
T

j

= 125˚C

I

T

= 2000A
IT = 1000A
Max. value

I

T

= 2000A
IT = 1000A
Min. value

I

RR

Q

S

I

T

dI/dt

1010.10.010.001

Gate trigger current, I

GT

- (A)

100

10

1

0.1

Gate trigger voltage, V

GT

- (V)

100W

50W

20W

10W

5W

Region of certain

triggering

Upper limit 95%

Lower limit 5%

T

j

= 125˚C

T

j

= 25˚C

T

j

= -40˚C

V

GD

100
200
500
1ms

10ms

Frequency Hz

50
150
150
150
150

20

100
150
150
150

50

-

400
150
125
100

25

-

Pulse width

µs

Table gives pulse power PGM in Watts

7/8

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DCR1003SF

PACKAGE DETAILS

For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.

Hole Ø3.6x2.0 deep (in both electrodes)

Ø48 nom

27.0

25.4

Ø1.5

Cathode

Gate

Anode

Ø48 nom

Ø76 max

Nominal weight: 450g

Clamping force: 19.5kN ± 10%

Lead length: 420mm

Lead terminal connector: M4 ring

Package outline type code: F

Cathode tab

8/8

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DCR1003SF

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic
semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the
voltage and current capability of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.

Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).

DEVICE CLAMPS

Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre­loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm

Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839

HEATSINKS

Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimize the
performance of our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.

CUSTOMER SERVICE CENTRES

Mainland Europe Tel: [phone]. Fax: [phone]
North America Tel: [phone]. Fax: [phone].
UK, Scandinavia & Rest Of World Tel: [phone]. Fax: [phone]

SALES OFFICES

Mainland Europe Tel: [phone]. Fax: [phone]
North America Tel: [phone]. Fax: [phone]. Toll Free: 1.888.33.DYNEX (39639) /

Tel: [phone]. Fax: [phone].
UK, Scandinavia & Rest Of World Tel: [phone]. Fax: [phone]

These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4645-6 Issue No. 6.0 July 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

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Datasheet Annotations:

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Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
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