Datasheet DCR1002SF12, DCR1002SF11, DCR1002SF10, DCR1002SF14, DCR1002SF13 Datasheet (DYNEX)

DCR1002SF

DCR1002SF

Phase Control Thyristor

Advance Information

Replaces April 2000 version, DS4243-4.3 DS4243-5.0 July 2001

FEATURES

■ Double Side Cooling

■ High Surge Capability

■ Low Turn-on Losses

APPLICATIONS

■ High Power Converters

■ High Voltage Power Supplies

■ DC Motor Control

VOLTAGE RATINGS

Type Number Repetitive Peak

Voltages
V

DRM VRRM

V

DCR1002SF14
DCR1002SF13
DCR1002SF12
DCR1002SF11
DCR1002SF10

Lower voltage grades available.

1400
1300
1200
1100
1000

Conditions

Tvj = 0˚ to 125˚C,
I

= I

RRM

, V
& V
& V

RRM tp

= 100mA,

= 10ms,

=

RSM

+ 100V

RRM

DRM

V

DRM

V

DSM

V

DRM

respectively

ORDERING INFORMATION

When ordering, select the required part number shown in the
Voltage Ratings selection table.

For example:

DCR1002SF12

Note: Please use the complete part number when ordering
and quote this number in any future correspondance relating
to your order.

KEY PARAMETERS
V

DRM

I

T(AV)

I

TSM

dVdt* 1000V/
dI/dt 1000A/

*Higher dV/dt selections available

1400V
1850A
32500A

µs
µs

Outline type code: F

See Package Details for further information.

Fig. 1 Package outline

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DCR1002SF

CURRENT RATINGS

T

= 60˚C unless stated otherwise.

case

Symbol Parameter Conditions

Double Side Cooled

I

T(AV)

I

T(RMS)

I

Mean on-state current

RMS value

T

Continuous (direct) on-state current

Half wave resistive load 1850 A

Single Side Cooled (Anode side)

I

T(AV)

I

T(RMS)

I

T

Mean on-state current

RMS value

Continuous (direct) on-state current

Half wave resistive load 1190 A

CURRENT RATINGS

T

= 80˚C unless stated otherwise.

case

Symbol Parameter Conditions

Double Side Cooled

UnitsMax.

- 2900 A

- 2668 A

- 1870 A

- 1550 A

UnitsMax.

I

T(AV)

I

T(RMS)

I

T

Mean on-state current

RMS value

Continuous (direct) on-state current

Single Side Cooled (Anode side)

I

T(AV)

I

T(RMS)

I

T

Mean on-state current

RMS value

Continuous (direct) on-state current

Half wave resistive load 1430 A

- 2245 A

- 1780 A

Half wave resistive load 900 A

- 1414 A

- 1065 A

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SURGE RATINGS

DCR1002SF

Symbol

I

TSM

2

tI

I

I

TSM

I2t

Surge (non-repetitive) on-state current

2

t for fusing

Surge (non-repetitive) on-state current

2

I

t for fusing 5.28 x 106A2s

Parameter

THERMAL AND MECHANICAL DATA

Symbol

R

th(j-c)

R

th(c-h)

Thermal resistance - junction to case

Thermal resistance - case to heatsink

Parameter

Conditions

10ms half sine; T

VR = 50% V

10ms half sine; T

VR = 0

Conditions Min. Max. Units

Double side cooled

Single side cooled

Clamping force 19.5kN
with mounting compound

case

- 1/4 sine

RRM

case

= 125oC

= 125oC

dc

Cathode dc
Double side

Single side

Max. Units

26 kA

6

3.38 x 10

A2s

32.5 kA

- 0.018oC/W

o

C/W- 0.036Anode dc

o

- 0.036

0.003

-

C/W

o

C/W

- 0.006oC/W

On-state (conducting) - 135

T

vj

T

stg

-

Virtual junction temperature

Storage temperature range

Clamping force

Reverse (blocking)

-

125

–55 125

18.0 22.0 kN

o

C

o

C

o

C

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DCR1002SF

DYNAMIC CHARACTERISTICS

ParameterSymbol Conditions Typ. Max. Units

I

RRM/IDRM

Peak reverse and off-state current At V

RRM/VDRM

dV/dt Maximum linear rate of rise of off-state voltage To 67% V

From 80% V

dI/dt

Rate of rise of on-state current

Gate source 20V, 10Ω
tr = 0.5µs to JEDEC RS397

V

T(TO)

r

T

t

gd

q

Threshold voltage At Tvj = 125oC

On-state slope resistance At Tvj = 125oC

V

= 67% V

Delay time

D

Rise time 0.5µs, Tj = 25oC

I

= 800A, tp = 1ms, Tj = 125˚C,

T

VRM = 50V, dIRR/dt = 20A/µs,
VDR = 67% V

I

L

I

H

Latching current Tj = 25oC, VD = 5V

Holding current Tj = 25oC, R

GATE TRIGGER CHARACTERISTICS AND RATINGS

, T

= 125oC

case

= 125oC.

DRM Tj

to 1000A

DRM

, Gate source 30V, 15Ω

DRM

, dVDR/dt = 20V/µs linear

DRM

= ∞

g-k

Repetitive 50Hz

Non-repetitive

- 100 mA

- 1000 V/µs

- 500 A/µs

- 1000 A/µs

0.9-V

- 0.17 mΩ

-2µs

µs200-Turn-off timet

- 350 mA

- 100 mA

V

V

V

P

V

I

V

I

FGM

P

G(AV)

GT

GT

GD

FGM

FGN

RGM

GM

ConditionsParameterSymbol

Gate trigger voltage V

Gate trigger current

Gate non-trigger voltage At 67% V

V

DRM

DRM

= 5V, T

= 5V, T

DRM Tcase

case

case

= 25oC

= 25oC

= 125oC

Peak forward gate voltage Anode positive with respect to cathode

Peak forward gate voltage Anode negative with respect to cathode

Peak reverse gate voltage

Peak forward gate current Anode positive with respect to cathode

Peak gate power See table, gate characteristics curve

Mean gate power

Max. Units

3.5 V

200 mA

0.25 V

30 V

0.25 V

5V

30 A

150 W

10 W

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CURVES

DCR1002SF

6000

Measured under pulse conditions.
Conditions: T

5000

- (A)

T

4000

3000

2000

Instantaneous on-state current, I

1000

0

0.5 1.00 1.50 2.000.75 1.25 1.75

= 125˚C

j

Instantaneous on-state voltage, VT - (V)

Fig.2 Maximum (limit) on-state characteristics

500

400

300

200

Mean power dissipation - (W)

100

0

0 500 1000 1500

Mean on-state current - (A)

dc

1/2 wave
3 phase

6 phase

Fig.3 Power dissipation curves

VTM Equation:­VTM = A + Bln (IT) + C.IT+D.√I

T

Where A = –0.6475

B = 0.3079
C = 0.0002787

D = –0.02311
these values are valid for Tj = 125˚C for IT 500A to to
6000A

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DCR1002SF

10000

Conditions: IT = 1000A, VR = –100V,

= 125˚C

T

j

is total integral stored charge

Q

S

Max Q

S

- (µC)

S

1000

Total stored charge, Q

dI/dt

I

T

Min Q

100

0.1 1.0 10 100
Rate of decay of on-state current, dI/dt - (A/µs)

Fig.4 Stored charge Fig.5 Reverse recovery current

10000

Conditions: IT = 1000A, VR = –100V,

= 125˚C

T

j

Max I

RR

- (A)

RR

Min I

RR

S

1000

Reverse recovery current, I

Q

S

I

RR

100

0.1 1.0 10 100
Rate of decay of on-state current, dI/dt - (A/µs)

100

10

- (V)

GT

Pulse width

10ms

U

µs

100
200
500

1ms

er limit 95%

pp

Frequency Hz

50
150
150
150
150

20

1

Gate trigger voltage, V

V

GD

0.1

Fig.6 Gate characteristics

Table gives pulse power PGM in Watts

400

100

150

150

125

150

100

150

25

50

-

-

= 125˚C

j

T

Lower limit 5%

Gate trigger current, I

10W

5W

= -40˚C

= 25˚C

j

j

T

T

- (A)

GT

100W

50W

20W

Region of certain

triggering

0.1

Anode side cooled

Double side cooled

0.01

Conduction Effective thermal resistance

Thermal Impedance - Junction to case (˚C/W)

d.c.

Halfwave

3 phase 120˚

0.001

1010.10.010.001

0.001 0.01 0.1 1.0 10

6 phase 60˚

Junction to case ˚C/W

Double side

0.018

0.021

0.022

0.025

Anode side

0.036

0.038

0.040

0.043

Time - (s)

Fig.6 Transient thermal impedance - junction to case

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70

60

50

DCR1002SF

I2t = Î2 x t
2

40

30

Peak half sine wave on-state current - (kA)

20

10

11012345

I2t

10 20 30

ms Cycles at 50Hz

Duration

50

Fig.7 Surge (non-repetitive) on-state current vs time

(with 50% V

RRM

at T

= 125˚C)

case

5

I

2

t value - (A

4

2

s x 10

3

6

)

2

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DCR1002SF

PACKAGE DETAILS

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.

Hole Ø3.6x2.0 deep (in both electrodes)

Cathode tab

Ø1.5

Gate

Cathode

Ø76 max
Ø48 nom

Ø48 nom

Nominal weight: 450g

Clamping force: 19.5kN ± 10%

Lead length: 420mm

Lead terminal connector: M4 ring

Package outline type code: F

Anode

27.0

25.4

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DCR1002SF

POWER ASSEMBLY CAPABILITY

The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor,
and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability
of our semiconductors.

We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our
customers.

Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution
(PACs).

DEVICE CLAMPS

Disc devices require the correct clamping force to ensure their safe operation. The PACS range includes a varied selection of pre-loaded
clamps to suit all of our manufactured devices. Types available include cube clamps for single side cooling of ‘T’ 23mm and ‘E’ 30mm
discs, and bar clamps right up to 83kN for our ‘Z’ 100mm thyristors and diodes.

Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839

HEATSINKS

The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.

For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer
service office.

http://www.dynexsemi.com

e-mail: [email protected]

HEADQUARTERS OPERATIONS

DYNEX SEMICONDUCTOR LTD

Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: [phone]
Fax: [phone]

DYNEX POWER INC.

99 Bank Street, Suite 410,
Ottawa, Ontario, Canada, K1P 6B9
Tel: [phone]
Fax: [phone]
Toll Free: 1.888.33.DYNEX (39639)

Datasheet Annotations:

Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:-

Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.

This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as
a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves
the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such
methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication
or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury

or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request.

All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.

CUSTOMER SERVICE CENTRES

Mainland Europe Tel: [phone]. Fax: [phone]
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These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2001 Publication No. DS4243-5 Issue No. 5.0 July 2001
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM

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