Datasheet DBL157G, DBL207G Specification

Page 1
DBL151G – DBL159G
AEC-Q101 qualified available
Ideal for printed circuit board
Reliable low cost construction utilizing molded plastic technique
High surge current capability
UL Recognized File # E-326854
RoHS Compliant
Halogen-free according to IEC 61249-2-21
APPLICATIONS
Switching mode power supply (SMPS)
Adapters
Lighting application
MECHANICAL DATA
Case: DBL
Molding compound meets UL 94V-0 flammability rating
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 0.360g (approximately)
KEY PARAMETERS
PARAMETER
VALUE
UNIT
IF
1.5 A V
RRM
50 - 1400
V
I
FSM
50
A
T
J MAX
150
°C
Package
DBL
Configuration
Quad
DBL
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
PARAMETER
SYMBOL
DBL
151G
DBL
152G
DBL
153G
DBL
154G
DBL
155G
DBL
156G
DBL
157G
DBL
158G
DBL
159G
UNIT
Marking code on the device
DBL
151G
DBL
152G
DBL
153G
DBL
154G
DBL
155G
DBL
156G
DBL
157G
DBL
158G
DBL
159G
Repetitive peak reverse voltage
V
RRM
50
100
200
400
600
800
1000
1200
1400
V
Reverse voltage, total rms value
V
R(RMS)
35
70
140
280
420
560
700
840
980
V
Forward current
IF
1.5
A
Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load
I
FSM
50
A
Rating for fusing (t<8.3ms)
I2t
10.3
A2s
Junction temperature
TJ
- 55 to +150
°C
Storage temperature
T
STG
- 55 to +150
°C
Taiwan Semiconductor
1.5A, 50V - 1400V Standard Bridge Rectifier
1 Version: L2103
Page 2
DBL151G – DBL159G
THERMAL PERFORMANCE
PARAMETER
SYMBOL
TYP
UNIT
Junction-to-lead thermal resistance
R
ӨJL
15
°C/W
Junction-to-ambient thermal resistance
R
ӨJA
40
°C/W
ELECTRICAL SPECIFICATIONS (T
A
= 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
TYP
MAX
UNIT
Forward voltage per diode
(1)
DBL151G DBL152G DBL153G DBL154G DBL155G DBL156G DBL157G
IF = 1.5A, TJ = 25°C
VF
-
1.10
V
DBL158G DBL159G
-
1.25
V
Reverse current @ rated VR per diode
(2)
TJ = 25°C
IR
- 2 µA
TJ = 125°C
-
500
µA
Junction capacitance per diode
1MHz, VR = 4.0V
CJ
25 - pF
ORDERING INFORMATION
ORDERING CODE
(1)(2)
PACKAGE
PACKING
DBL15xG
DBL
50 / Tube
DBL15xGH
DBL
50 / Tube
Taiwan Semiconductor
Notes:
1. Pulse test with PW = 0.3ms
2. Pulse test with PW = 30ms
Notes:
1. “x” defines voltage from 50V(DBL151G) to 1400V(DBL159G)
2. H means AEC-Q101 qualified
2 Version: L2103
Page 3
DBL151G – DBL159G
Fig.1 Forward Current Derating Curve
Fig.2 Typical Junction Capacitance
Fig.3 Typical Reverse Characteristics
Fig.4 Typical Forward Characteristics
Fig.5 Maximum Non-Repetitive Forward Surge Current
0.0
0.5
1.0
1.5
2.0
0 25 50 75 100 125 150
1
10
100
1 10 100
f=1.0MHz Vsig=50mVp-p
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
TJ=25°C
TJ=125°C
0.1
1
10
0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6
Pulse width 300μs 1% duty cycle
DBL151G - DBL157G
DBL158G - DBL159G
0
10
20
30
40
50
60
1 10 100
8.3ms single half sine wave
CAPACITANCE (pF) INSTANTANEOUS REVERSE CURRENT (μA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS FORWARD CURRENT (A)
(A)
0.01
0.1
1
10
TJ=25°C
TJ=125°C
UF1DLW
FORWARD VOLTAGE (V)
AVERAGE FORWARD CURRENT (A)
REVERSE VOLTAGE (V)
AMBIENT TEMPERATURE (°C)
NUMBER OF CYCLES AT 60 Hz
PEAK FORWARD SURGE CURRENT (A)
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Taiwan Semiconductor
3 Version: L2103
Page 4
DBL151G – DBL159G
MARKING DIAGRAM
P/N
= Marking Code
G
= Green Compound
YW
= Date Code
F
= Factory Code
PACKAGE OUTLINE DIMENSIONS
DBL
Taiwan Semiconductor
4 Version: L2103
Page 5
DBL151G – DBL159G
Taiwan Semiconductor
Notice
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5 Version: L2103
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